arXiv subjects

Luis A. Zepeda-Ruiz

Publications and source records attributed to Luis A. Zepeda-Ruiz.

5 recordsLinked to original sources

arXiv2024

Extreme Metastability of Diamond and its Transformation to BC8 Post-Diamond Phase of Carbon

Diamond possesses exceptional physical properties due to its remarkably strong carbon-carbon bonding, leading to significant resilience to structural transformations at very high pressures and temperatures. Despite several experimental attempts, synthesis and recovery of the theoretically predicted post-diamond BC8 phase remains elusive. Through quantum accurate, multi-million atom molecular dynamics (MD) simulations, we have uncovered the extreme metastability of diamond at very high pressures, significantly exceeding its range of thermodynamic stability. We predict the post-diamond BC8 phase to be experimentally accessible only within a narrow high pressure-temperature region of the carbon phase diagram. The diamond to BC8 transformation proceeds through pre-melting followed by BC8 nucleation and growth in the metastable carbon liquid. We propose a double-shock compression pathway to achieve BC8 synthesis, which is currently being explored in theory-inspired experiments at the National Ignition Facility.

cond-mat.mtrl-sci↗

arXiv2020

Metal hardening in atomistic detail

Through millennia humans exploited the natural property of metals to get stronger or hardened when mechanically deformed. Ultimately rooted in the motion of dislocations, mechanisms of metal hardening remained in the crosshairs of physical metallurgists for over a century. Here, we performed atomistic simulations at the limits of supercomputing, which are sufficiently large to be statistically representative of macroscopic crystal plasticity yet fully resolved to examine the origins of metal hardening at its most fundamental level of atomic motion. We demonstrate that the notorious staged (inflection) hardening of metals is a direct consequence of crystal rotation under uniaxial straining. At variance with widely divergent and contradictory views in the literature, we observe that basic mechanisms of dislocation behavior are the same across all stages of metal hardening.

cond-mat.mtrl-sci↗

arXiv2016

Probing the ultimate limits of metal plasticity

Along with high strength, plasticity is what makes metals so widely usable in our material world. Both strength and plasticity properties of a metal are defined by the motion of dislocations - line defects in the crystal lattice that divide areas of atomic planes displaced relative to each other by an interatomic distance. Here we present first fully dynamic atomistic simulations of single crystal plasticity in metal tantalum predicting that above certain maximum rate of straining - the ultimate limit - the dislocations can no longer relieve mechanical loads and another mechanism, twinning, comes into play and takes over as the dominant mode of dynamic response. At straining rates below the ultimate limit, the metal attains a path-independent stationary state of plastic flow in which both flow stress and dislocation density remain constant indefinitely for as long as the straining conditions remain unchanged. In this distinct state tantalum flows like a viscous fluid while still remaining a strong and stiff metal.

cond-mat.mtrl-sci↗

arXiv2013

Atomistics of vapor-liquid-solid nanowire growth

Vapor-liquid-solid (VLS) route and its variants are routinely used for scalable synthesis of semiconducting nanowires yet the fundamental growth processes remain unknown. Here, we employ atomic-scale computations based on model potentials to study the stability and growth of gold-catalyzed silicon nanowires (SiNWs). Equilibrium studies uncover segregation at the solid-like surface of the catalyst particle, a liquid AuSi droplet, and a silicon-rich droplet-nanowire interface enveloped by heterogeneous truncating facets. Supersaturation of the droplets leads to rapid 1D growth on the truncating facets and much slower nucleation-controlled 2D growth on the main facet. Surface diffusion is suppressed and the excess Si flux occurs through the droplet bulk which, together with the Si-rich interface and contact line, lowers the nucleation barrier on the main facet. The ensuing step flow is modified by Au diffusion away from the step edges. Our study highlights key interfacial characteristics for morphological and compositional control of semiconducting nanowire arrays.

cond-mat.mtrl-sci↗

arXiv2004

Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium

We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular dynamics simulations. The <111>-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other <111> directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T<600 K, this behavior arises from temperature-dependent correlations. At T>600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.

cond-mat.mtrl-sci↗