arXiv subjects

Luis E. F. Foa Torres

Publications and source records attributed to Luis E. F. Foa Torres.

30 records · Page 2Linked to original sources

arXiv2018

Robust edge states induced by electron-phonon interaction in graphene nanoribbons

The search of new means of generating and controlling topological states of matter is at the front of many joint efforts, including bandgap engineering by doping and light-induced topological states. Most of our understading, however, is based on a single particle picture. Topological states in systems including interaction effects, such as electron-electron and electron-phonon, remain less explored. By exploiting a non-perturbative and non-adiabatic picture, here we show how the interaction between electrons and a coherent phonon mode can lead to a bandgap hosting edge states of topological origin. Further numerical simulations witness the robustness of these states against different types of disorder. Our results contribute to the search of topological states, in this case in a minimal Fock space.

cond-mat.mes-hall↗

arXiv2018

Multi-terminal Conductance at the Surface of a Weyl Semimetal

Weyl semimetals are a new paradigmatic topological phase of matter featuring a gapless spectrum. One of its most distinctive features is the presence of Fermi arc surface states. Here, we report on atomistic simulations of the dc conductance and quantum Hall response of a minimal Weyl semimetal. By using scattering theory we show that a quantized Hall conductance with a non-vanishing longitudinal conductance emerges associated to the Fermi arc surface states with a remarkable robustness to high concentrations of defects in the system. Additionally, we predict that a slab of a Weyl semimetal with broken time-reversal symmetry bears persistent currents fully determined by the system size and the lattice parameters.

cond-mat.mes-hall↗

arXiv2017

One-way transport in laser-illuminated bilayer graphene: A Floquet isolator

We explore the Floquet band-structure and electronic transport in laser-illuminated bilayer graphene. By using a bias voltage perpendicular to the graphene bilayer we show how to get one-way charge and valley transport among two unbiased leads. In contrast to quantum pumping, our proposal uses a different mechanism based on generating a non-reciprocal bandstructure with a built-in directionality. The Floquet states at one edge of a graphene layer become hybridized with the continuum on the other layer, and so the resulting bandstructure allows for one-way transport as in an \textit{isolator}. Our proof-of-concept may serve as a building block for devices exploiting one-way states.

cond-mat.mes-hall↗

arXiv2016

Valley filtering by a line-defect in graphene: quantum interference and inversion of the filter effect

Valley filters are crucial to any device exploiting the valley degree of freedom. By using an atomistic model, we analyze the mechanism leading to the valley filtering produced by a line-defect in graphene and show how it can be inverted by external means. Thanks to a mode decomposition applied to a tight-binding model we can resolve the different transport channels in k-space while keeping a simple but accurate description of the band structure, both close and further away from the Dirac point. This allows the understanding of a destructive interference effect (Fano resonance or antiresonance) on the p-side of the Dirac point leading to a reduced conductance. We show that in the neighborhood of this feature the valley filtering can be reversed by changing the occupations with a gate voltage, the mechanism is explained in terms of a valley-dependent Fano resonance splitting. Our results open the door for an enhanced control of valley transport in graphene-based devices.

cond-mat.mes-hall↗

arXiv2015

Hierarchy of Floquet gaps and edge states for driven honeycomb lattices

Electromagnetic driving in a honeycomb lattice can induce gaps and topological edge states with a structure of increasing complexity as the frequency of the driving lowers. While the high frequency case is the most simple to analyze we focus on the multiple photon processes allowed in the low frequency regime to unveil the hierarchy of Floquet edge-states. In the case of low intensities an analytical approach allows us to derive effective Hamiltonians and address the topological character of each gap in a constructive manner. At high intensities we obtain the net number of edge states, given by the winding number, with a numerical calculation of the Chern numbers of each Floquet band. Using these methods, we find a hierarchy that resembles that of a Russian nesting doll. This hierarchy classifies the gaps and the associated edge states in different orders according to the electron-photon coupling strength. For large driving intensities, we rely on the numerical calculation of the winding number, illustrated in a map of topological phase transitions. The hierarchy unveiled with the low energy effective Hamiltonians, alongside with the map of topological phase transitions discloses the complexity of the Floquet band structure in the low frequency regime. The proposed method for obtaining the effective Hamiltonian can be easily adapted to other Dirac Hamiltonians of two dimensional materials and even the surface of a 3D topological insulator.

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arXiv2013

Quantum charge pumping in graphene-based devices: When lattice defects do help

Quantum charge pumping, the quantum coherent generation of a dc current at zero bias through time dependent potentials, provides outstanding opportunities for metrology and the development of new devices. The long electronic coherence times and high quality of the crystal structure of graphene may provide suitable building blocks for such quantum pumps. Here, we focus in adiabatic quantum pumping through graphene nanoribbons in the Fabry-Pérot regime highlighting the crucial role of defects by using atomistic simulations. We show that even a single defect added to the pristine structure may produce a two orders of magnitude increase in the pumped charge.

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arXiv2013

Non-perturbative laser effects on the electrical properties of graphene nanoribbons

The use of Floquet theory combined with a realistic description of the electronic structure of illuminated graphene and graphene nanoribbons is developed to assess the emergence of non-adiabatic and non-perturbative effects on the electronic properties. Here, we introduce an efficient computational scheme and illustrate its use by applying it to graphene nanoribbons in the presence of both linear and circular polarization. The interplay between confinement due to the finite sample size and laser-induced transitions is shown to lead to sharp features on the average conductance and density of states. Particular emphasis is given to the emergence of the bulk limit response.

cond-mat.mes-hall↗

arXiv2012

Laser-induced effects on the electronic features of graphene nanoribbons

We study the interplay between lateral confinement and photon-induced processes on the electronic properties of illuminated graphene nanoribbons. We find that by tuning the device setup (edges geometries, ribbon width and polarization direction), a laser with frequency Ω may either not affect the electronic structure, or induce bandgaps or depletions at \hbar Ω/2, and/or at other energies not commensurate with half the photon energy. Similar features are also observed in the dc conductance, suggesting the use of the polarization direction to switch on and off the graphene device. Our results could guide the design of novel types of optoelectronic nano-devices.

cond-mat.mes-hall↗

arXiv2011

Tuning laser-induced bandgaps in graphene

Could a laser field lead to the much sought-after tunable bandgaps in graphene? By using Floquet theory combined with Green's functions techniques, we predict that a laser field in the mid-infrared range can produce observable bandgaps in the electronic structure of graphene. Furthermore, we show how they can be tuned by using the laser polarization. Our results could serve as a guidance to design opto-electronic nano-devices.

cond-mat.mes-hall↗

arXiv2009

AC transport in graphene-based Fabry-Perot devices

We report on a theoretical study of the effects of time-dependent fields on electronic transport through graphene nanoribbon devices. The Fabry-Pérot interference pattern is modified by an ac gating in a way that depends strongly on the shape of the graphene edges. While for armchair edges the patterns are found to be regular and can be controlled very efficiently by tuning the ac field, samples with zigzag edges exhibit a much more complex interference pattern due to their peculiar electronic structure. These studies highlight the main role played by geometric details of graphene nanoribbons within the coherent transport regime. We also extend our analysis to noise power response, identifying under which conditions it is possible to minimize the current fluctuations as well as exploring scaling properties of noise with length and width of the systems.

cond-mat.mes-hall↗

arXiv2006

Towards a time-reversal mirror for quantum systems

The reversion of the time evolution of a quantum state can be achieved by changing the sign of the Hamiltonian as in the polarization echo experiment in NMR. In this work we describe an alternative mechanism inspired by the acoustic time reversal mirror. By solving the inverse time problem in a discrete space we develop a new procedure, the perfect inverse filter. It achieves the exact time reversion in a given region by reinjecting a prescribed wave function at its periphery.

quant-ph↗

arXiv2005

Mono-parametric quantum charge pumping: interplay between spatial interference and photon-assisted tunneling

We analyze quantum charge pumping in an open ring with a dot embedded in one of its arms. We show that cyclic driving of the dot levels by a \textit{single} parameter leads to a pumped current when a static magnetic flux is simultaneously applied to the ring. Based on the computation of the Floquet-Green's functions, we show that for low driving frequencies $ω_0$, the interplay between the spatial interference through the ring plus photon-assisted tunneling gives an average direct current (dc) which is proportional to $ω_0^{2}$. The direction of the pumped current can be reversed by changing the applied magnetic field.

cond-mat.mes-hall↗