Searcharxiv⌕ Search

arXiv subjects

Luis E. Hueso

Publications and source records attributed to Luis E. Hueso.

At least 73 records · Page 4Linked to original sources

Omnidirectional spin-to-charge conversion in graphene/NbSe$_2$ van der Waals heterostructures

The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By analyzing the magnitude and temperature dependence of the signal in different configurations, we argue that the different SCC components measured are likely due to spin-orbit proximity and broken symmetry at the twisted graphene/NbSe$_2$ interface. Such efficient omnidirectional SCC opens the door to the use of new architectures in spintronic devices, from spin-orbit torques that can switch any magnetization to the magnetic state readout of magnetic elements pointing in any direction.

cond-mat.mes-hall↗

Spin Hall magnetoresistance effect from a disordered interface

The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize Van der Waals magnetic materials, which support long range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealing the formation of a few-nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe3 interface, washing out the interaction between the spins of the Pt electrons and the MnPSe3 magnetic lattice. Our results show that damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements.

cond-mat.mes-hall↗

Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as Tellurium are excellent electrical transport materials, but have not been explored to enable the electrical control of spin polarization in devices. Here, we demonstrate the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline Tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices.

cond-mat.mes-hall↗

Room-temperature operation of a molecular spin photovoltaic device on a transparent substrate

Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of these challenges is to couple the photo-response of the device together with its magneto-response to exploit the multifunctional operation at room temperature. Here, the multifunctional operation of a single layer p-type molecular spin valve is presented, where the device shows a photovoltaic effect at the room temperature on a transparent glass substrate. The generated photovoltage is almost three times larger than the applied bias to the device which facilitates the modulation of the magnetic response of the device both with bias and light. It is observed that the photovoltage modulation with light and magnetic field is linear with the light intensity. The device shows an increase in power conversion efficiency under magnetic field, an ability to invert the current with magnetic field and under certain conditions it can act as a spin-photodetector with zero power consumption in the standby mode. The room temperature exploitation of the interplay among light, bias and magnetic field in the single device with a p-type molecule opens a way towards more complex and efficient operation of a complete spin-photovoltaic cell.

physics.app-ph↗

Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves

Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.

cond-mat.mes-hall↗

Paramagnetic spin Hall magnetoresistance

Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.

cond-mat.mtrl-sci↗

Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature

The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe$_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic.

cond-mat.mes-hall↗

Real-space observation of vibrational strong coupling between propagating phonon polaritons and organic molecules

Phonon polaritons (PPs) in van der Waals (vdW) materials can strongly enhance light-matter interactions at mid-infrared frequencies, owing to their extreme infrared field confinement and long lifetimes. PPs thus bear potential for achieving vibrational strong coupling (VSC) with molecules. Although the onset of VSC has recently been observed spectroscopically with PP nanoresonators, no experiments so far have resolved VSC in real space and with propagating modes in unstructured layers. Here, we demonstrate by real-space nanoimaging that VSC can be achieved between propagating PPs in thin vdW crystals (specifically h-BN) and molecular vibrations in adjacent thin molecular layers. To that end, we performed near-field polariton interferometry, showing that VSC leads to the formation of a propagating hybrid mode with a pronounced anti-crossing region in its dispersion, in which propagation with negative group velocity is found. Numerical calculations predict VSC for nanometer-thin molecular layers and PPs in few-layer vdW materials, which could make propagating PPs a promising platform for ultra-sensitive on-chip spectroscopy and strong coupling experiments.

physics.optics↗

Disentangling spin, anomalous and planar Hall effects in ferromagnetic/heavy metal nanostructures

Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin Hall signal in these FM/HM T-shaped nanostructures. The most pronounced Hall effects in our Co50Fe50/Pt nanostructures are the planar Hall effect and the anomalous Hall effect generated in the FM nanowire. We find that the planar Hall effect, induced by misalignment between magnetization and current direction in the FM wire, is manifested as a shift in the measured baseline resistance, but does not alter the spin Hall signal. In contrast, the anomalous Hall effect, arising from the charge current distribution within the FM, adds to the spin Hall signal. However, the effect can be made insignificant by minimizing the shunting effect via proper design of the device. We conclude that local spin injection in FM/HM nanostructures is a suitable tool for measuring spin Hall signals and, therefore, a valid method for magnetic state readout in prospective spin-based logic.

cond-mat.mes-hall↗

Microcavity phonon polaritons from weak to ultrastrong phonon-photon coupling

Strong coupling between molecular vibrations and microcavity modes has been demonstrated to modify physical and chemical properties of the molecular material. Here, we study the much less explored coupling between lattice vibrations (phonons) and microcavity modes. Embedding thin layers of hexagonal boron nitride (hBN) into classical microcavities, we demonstrate the evolution from weak to ultrastrong phonon-photon coupling when the hBN thickness is increased from a few nanometers to a fully filled cavity. Remarkably, strong coupling is achieved for hBN layers as thin as 10 nm. Further, the ultrastrong coupling in fully filled cavities yields a cavity polariton dispersion matching that of phonon polaritons in bulk hBN, highlighting that the maximum light-matter coupling in microcavities is limited to the coupling strength between photons and the bulk material. The tunable cavity phonon polaritons could become a versatile platform for studying how the coupling strength between photons and phonons may modify the properties of polar crystals.

physics.optics↗

Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers

Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical temperature (TC) of large-area NbSe2 monolayers is manipulated, employing ultrathin molecular adlayers. Spectroscopic evidence indicates that aligned molecular dipoles within the self-assembled layers act as a fixed gate terminal, collectively generating a macroscopic electrostatic field on NbSe2. This results in an \sim 55\% increase and a 70\% decrease in TC depending on the electric field polarity, which is controlled via molecular selection. The reported functionalization, which improves the air stability of NbSe2, is efficient, practical, up-scalable, and suited to functionalize large-area TMDs. Our results indicate the potential of hybrid 2D materials as a novel platform for tunable superconductivity.

cond-mat.supr-con↗

Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance

Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G_i$), disentangling the contribution of field-like torque ($G_i$), damping-like torque ($G_r$), and spin-flip scattering ($G_s$). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from $G_i$, which is at least three times larger than $G_r$ below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which play a key role in emerging fields such as superconducting spintronics and caloritronics, and topological quantum computation.

cond-mat.mes-hall↗

Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions

We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface, which are parameterized, respectively, by $G_{\parallel/\perp}$ and $σ_{\rm{sc/cs}}$. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiO$_x$/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.

cond-mat.mes-hall↗

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

cond-mat.mes-hall↗

Collective near-field coupling in infrared-phononic metasurfaces for nano-light canalization

Polaritons, coupled excitations of photons and dipolar matter excitations, can propagate along anisotropic metasurfaces with either hyperbolic or elliptical dispersion. At the transition from hyperbolic to elliptical dispersion (corresponding to a topological transition), various intriguing phenomena are found, such as an enhancement of the photonic density of states, polariton canalization and hyperlensing. Here we investigate theoretically and experimentally the topological transition and the polaritonic coupling of deeply subwavelength elements in a uniaxial infrared-phononic metasurface, a grating of hexagonal boron nitride (hBN) nanoribbons. By hyperspectral infrared nanoimaging, we observe, for the first time, a synthetic transverse optical phonon resonance (that is, the strong collective near-field coupling of the nanoribbons) in the middle of the hBN Reststrahlen band, yielding a topological transition from hyperbolic to elliptical dispersion. We further visualize and characterize the spatial evolution of a deeply subwavelength canalization mode near the transition frequency, which is a collimated polariton that is the basis for hyperlensing and diffraction-less propagation. Our results provide fundamental insights into the role of polaritonic near-field coupling in metasurfaces for creating topological transitions and polariton canalization.

physics.optics↗

Differences in the magnon diffusion length for electrically and thermally driven magnon currents in Y$_3$Fe$_5$O$_{12}$

Recent demonstration of efficient transport and manipulation of spin information by magnon currents have opened exciting prospects for processing information in devices. Magnon currents can be driven both electrically and thermally, even in magnetic insulators, by applying charge currents in an adjacent metal layer. Earlier reports in thin yttrium iron garnet (YIG) films suggested that the diffusion length of magnons is independent on the biasing method, but different values were obtained in thicker films. Here, we study the magnon diffusion length for electrically and thermally driven magnon currents in the linear regime in a 2-$μ$m-thick YIG film as a function of temperature and magnetic field. Our results show a decrease of the magnon diffusion length with magnetic field for both biasing methods and at all temperatures from 5 to 300 K, indicating that sub-thermal magnons dominate the long-range transport. Moreover, we demonstrate that the value of the magnon diffusion length depends on the driving mechanism, suggesting that different non-equilibrium magnon distributions are biased for each method. Finally, we demonstrate that the magnon diffusion length for thermally driven magnon currents is independent of the YIG thickness and material growth conditions, confirming that this quantity is an intrinsic parameter of YIG.

cond-mat.mes-hall↗

Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect raises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications.

cond-mat.mes-hall↗

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporating graphene electrodes in a transistor geometry. Our devices show a balanced ambipolar behavior with high current ON-OFF ratio and charge carrier mobilities. These effects are caused by both the effective energy barrier modulation and by the weak electric field screening effect at the graphene-polymer interface. Our results provide a strategy to integrate 2D graphene electrodes in ambipolar transistors in order to improve and modulate their characteristics, paving the way for the design of novel organic electronic devices.

physics.app-ph↗