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Luka Trifunovic

Publications and source records attributed to Luka Trifunovic.

At least 19 recordsLinked to original sources

Topology of ultra-localized insulators and superconductors

The topology of an insulator can be defined even when all eigenstates of the system are localized - an extreme case of Anderson insulators that we call ultra-localized. We derive the classification of such ultra-localized insulators in all symmetry classes and dimensions. We clarify their bulk-boundary correspondence and show that ultra-localized systems are in many instances phases of matter not described by the known classification of topological insulators and superconductors. As a consequence, we clarify which conventional topological phases are Wannierizable, and which topological phases cannot exist without delocalized states.

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Fragility of surface states in non-Wigner Dyson topological insulators

Topological insulators and superconductors support extended surface states protected against the otherwise localizing effects of static disorder. Specifically, in the Wigner-Dyson insulators belonging to the symmetry classes A, AI, and AII, a band of extended surface states is continuously connected to a likewise extended set of bulk states forming a ``bridge'' between different surfaces via the mechanism of spectral flow. In this work we show that this mechanism is absent in the majority of non-Wigner-Dyson topological superconductors and chiral topological insulators. In these systems, there is precisely one point with granted extended states, the center of the band, $E=0$. Away from it, states are spatially localized, or can be made so by the addition of spatially local potentials. Considering the three-dimensional insulator in class AIII and winding number $ν=1$ as a paradigmatic case study, we discuss the physical principles behind this phenomenon, and its methodological and applied consequences. In particular, we show that low-energy Dirac approximations in the description of surface states can be treacherous in that they tend to conceal the localizability phenomenon. We also identify markers defined in terms of Berry curvature as measures for the degree of state localization in lattice models, and back our analytical predictions by extensive numerical simulations. A main conclusion of this work is that the surface phenomenology of non-Wigner-Dyson topological insulators is a lot richer than that of their Wigner-Dyson siblings, extreme limits being spectrum-wide quantum critical delocalization of all states vs. full localization except at the $E=0$ critical point. As part of our study we identify possible experimental signatures distinguishing between these different alternatives in transport or tunnel spectroscopy.

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Topologically localized insulators

We show that fully-localized, three-dimensional, time-reversal-symmetry-broken insulators do not belong to a single phase of matter but can realize topologically distinct phases that are labelled by integers. The phase transition occurs only when the system becomes conducting at some filling. We find that these novel topological phases are fundamentally distinct from insulators without disorder: they are guaranteed to host delocalized boundary states giving rise to the quantized boundary Hall conductance, whose value is equal to the bulk topological invariant.

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$N$-band Hopf insulator

We study the generalization of the three-dimensional two-band Hopf insulator to the case of many bands, where all the bands are separated from each other by band gaps. The obtained $\mathbb{Z}$ classification of such a $N$-band Hopf insulator is related to the quantized isotropic magnetoelectric coefficient of its bulk. The boundary of a $N$-band Hopf insulator can be fully gapped, and we find that there is no unique way of dividing a finite system into bulk and boundary. Despite this non-uniqueness, we find that the magnetoelectric coefficient of the bulk and the anomalous Hall conductivity of the boundary are quantized to the same integer value. We propose an experiment where the quantized boundary effect can be measured in a non-equilibrium state.

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Bulk-and-edge to corner correspondence

We show that two-dimensional band insulators, with vanishing bulk polarization, obey bulk-and-edge to corner charge correspondence stating that the knowledge of the bulk and the two corresponding ribbon band structures uniquely determines the fractional part of the corner charge irrespective of the corner termination. Moreover, physical observables related to macroscopic charge density of a terminated crystal can be obtained by representing the crystal as collection of polarized edge regions with polarizations $\vec P^\text{edge}_α$, where the integer $α$ enumerates the edges. We introduce a particular manner of cutting a crystal, dubbed "Wannier cut", which allows us to compute $\vec P^\text{edge}_α$. We find that $\vec P^\text{edge}_α$ consists of two pieces: the bulk piece expressed via quadrupole tensor of the bulk Wannier functions' charge density, and the edge piece corresponding to the Wannier edge polarization---the polarization of the edge subsystem obtained by Wannier cut. For a crystal with $n$ edges, out of $2n$ independent components of $\vec P^\text{edge}_α$, only $2n-1$ are independent of the choice of Wannier cut and correspond to physical observables: corner charges and edge dipoles.

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Higher-order topological band structures

The interplay of topology and symmetry in a material's band structure may result in various patterns of topological states of different dimensionality on the boundary of a crystal. The protection of these "higher-order" boundary states comes from topology, with constraints imposed by symmetry. We review the bulk-boundary correspondence of topological crystalline band structures, which relates the topology of the bulk band structure to the pattern of the boundary states. Furthermore, recent advances in the K-theoretic classification of topological crystalline band structures are discussed.

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Difficulties in operator-based formulation of the bulk quadrupole moment

Electric multipole moments are the most fundamental properties of insulating materials. However, the general formulation of bulk multipoles has been a long standing problem. The solution for the electric dipole moment was provided decades ago by King-Smith, Vanderbilt, and Resta. Recently, there have been attempts at generalizing Resta's formula to higher-order multipoles. We point out several issues in the recent proposals.

cond-mat.str-el

Symmetry-based indicators for topological Bogoliubov-de Gennes Hamiltonians

We develop a systematic approach for constructing symmetry-based indicators of a topological classification for superconducting systems. The topological invariants constructed in this work form a complete set of symmetry-based indicators that can be computed from knowledge of the Bogoliubov-de Gennes Hamiltonian on high-symmetry points in Brillouin zone. After excluding topological invariants corresponding to the phases without boundary signatures, we arrive at natural generalization of symmetry-based indicators [H. C. Po, A. Vishwanath, and H. Watanabe, Nature Comm. 8, 50 (2017)] to Hamiltonians of Bogoliubov-de Gennes type.

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Geometric orbital magnetization in adiabatic processes

We consider periodic adiabatic processes of gapped many-body spinless electrons. We find an additional contribution to the orbital magnetization due to the adiabatic time evolution, dubbed \textit{geometric} orbital magnetization, which can be expressed as derivative of the many-body Berry phase with respect to an external magnetic field. For two-dimensional band insulators, we show that the geometric orbital magnetization generally consists of two pieces, the topological piece that is expressed as third Chern-Simons form in $(t,k_x,k_y)$ space, and the non-topological piece that depends on Bloch states and energies of both occupied and unoccupied bands.

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Valley isospin of interface states in a graphene $pn$ junction in the quantum Hall regime

In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into interface states, which takes place whereever the $pn$ interface crosses the sample boundary, as well as the reverse process. For a graphene ribbon with armchair boundaries, the evolution of edge states into interface states and {\em vice versa} is governed by the conservation of valley isospin. Although valley isospin is not conserved in simplified models of a ribbon with zigzag boundaries, we find that arguments based on isospin conservation can be applied to a more realistic modeling of the graphene ribbon, which takes account of the lifting of electron-hole degeneracy. The valley isospin of interface states is an important factor determining the conductance of a graphene $pn$ junction in a quantizing magnetic field.

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Higher-order bulk-boundary correspondence for topological crystalline phases

We study the bulk-boundary correspondence for topological crystalline phases, where the crystalline symmetry is an order-two (anti)symmetry, unitary or antiunitary. We obtain a formulation of the bulk-boundary correspondence in terms of a subgroup sequence of the bulk classifying groups, which uniquely determines the topological classification of the boundary states. This formulation naturally includes higher-order topological phases as well as topologically nontrivial bulk systems without topologically protected boundary states. The complete bulk and boundary classification of higher-order topological phases with an additional order-two symmetry or antisymmetry is contained in this work.

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Second-order topological insulators and superconductors with an order-two crystalline symmetry

Second-order topological insulators and superconductors have a gapped excitation spectrum in bulk and along boundaries, but protected zero modes at corners of a two-dimensional crystal or protected gapless modes at hinges of a three-dimensional crystal. A second-order topological phase can be induced by the presence of a bulk crystalline symmetry. Building on Shiozaki and Sato's complete classification of bulk crystalline phases with an order-two crystalline symmetry [Phys.\ Rev.\ B {\bf 90}, 165114 (2014)], such as mirror reflection, twofold rotation, or inversion symmetry, we classify all corresponding second-order topological insulators and superconductors. The classification also includes antiunitary symmetries and antisymmetries.

cond-mat.mes-hall

Reflection symmetric second-order topological insulators and superconductors

Second-order topological insulators are crystalline insulators with a gapped bulk and gapped crystalline boundaries, but topologically protected gapless states at the intersection of two boundaries. Without further spatial symmetries, five of the ten Altland-Zirnbauer symmetry classes allow for the existence of such second-order topological insulators in two and three dimensions. We show that reflection symmetry can be employed to systematically generate examples of second-order topological insulators and superconductors, although the topologically protected states at corners (in two dimensions) or at crystal edges (in three dimensions) continue to exist if reflection symmetry is broken. A three-dimensional second-order topological insulator with broken time-reversal symmetry shows a Hall conductance quantized in units of $e^2/h$.

cond-mat.mes-hall

Bott periodicity for the topological classification of gapped states of matter with reflection symmetry

Using a dimensional reduction scheme based on scattering theory, we show that the classification tables for topological insulators and superconductors with reflection symmetry can be organized in two period-two and four period-eight cycles, similar to the Bott periodicity found for topological insulators and superconductors without spatial symmetries. With the help of the dimensional reduction scheme the classification in arbitrary dimensions $d \ge 1$ can be obtained from the classification in one dimension, for which we present a derivation based on relative homotopy groups and exact sequences to classify one-dimensional insulators and superconductors with reflection symmetry. The resulting classification is fully consistent with a comprehensive classification obtained recently by Shiozaki and Sato [Phys.\ Rev.\ B {\bf 90}, 165114 (2014)]. The use of a scattering-matrix inspired method allows us to address the second descendant $\bZ_2$ phase, for which the topological nontrivial phase was previously reported to be vulnerable to perturbations that break translation symmetry.

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Graphene pn-junction in a quantizing magnetic field: Conductance at intermediate disorder strength

In a graphene {\em pn} junction at high magnetic field, unidirectional "snake states" are formed at the {\em pn} interface. In a clean {\em pn} junction, each snake state exists in one of the valleys of the graphene band structure, and the conductance of the junction as a whole is determined by microscopic details of the coupling between the snake states at the {\em pn} interface and quantum Hall edge states at the sample boundaries [Tworzydlo {\em et al.}, Phys. Rev. B {\bf 76}, 035411 (2007)]. Disorder mixes and couples the snake states. We here report a calculation of the full conductance distribution in the crossover between the clean limit and the strong disorder limit, in which the conductance distribution is given by random matrix theory [Abanin and Levitov, Science {\bf 317}, 641 (2007)]. Our calculation involves an exact solution of the relevant scaling equation for the scattering matrix, and the results are formulated in terms of parameters describing the microscopic disorder potential in bulk graphene.

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From Coupled Rashba Electron and Hole Gas Layers to 3D Topological Insulators

We introduce a system of stacked two-dimensional electron and hole gas layers with Rashba spin orbit interaction and show that the tunnel coupling between the layers induces a strong three- dimensional (3D) topological insulator phase. At each of the two-dimensional bulk boundaries we find the spectrum consisting of a single anistropic Dirac cone, which we show by analytical and numerical calculations. Our setup has a unit-cell consisting of four tunnel coupled Rashba layers and presents a synthetic strong 3D topological insulator and is distinguished by its rather high experimental feasibility.

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High-efficiency resonant amplification of weak magnetic fields for single spin magnetometry

We demonstrate theoretically that by placing a ferromagnetic particle between a nitrogen-vacancy (NV) magnetometer and a target spin, the magnetometer sensitivity is increased dramatically. Specifically, using materials and techniques already experimentally available, we find that by taking advantage of the ferromagnetic resonance the minimum magnetic moment that can be measured is smaller by four orders of magnitude in comparison to current state-of-the-art magnetometers. As such, our proposed setup is sensitive enough to detect a single nuclear spin at a distance of $30$~nm from the surface within less than one second of data acquisition at room temperature. Our proposal opens the door for nanoscale NMR on biological material under ambient conditions.

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Transport signature of fractional Fermions in Rashba nanowires

We study theoretically transport through a semiconducting nanowire (NW) in the presence of Rashba spin orbit interaction, uniform magnetic field, and spatially modulated magnetic field. The system is fully gapped, and the interplay between the spin orbit interaction and the magnetic fields leads to fractionally charged fermion (FF) bound states of Jackiw-Rebbi type at each end of the nanowire. We investigate the transport and noise behavior of a N/NW/N system, where the wire is contacted by two normal leads (N), and we look for possible signatures that could help in the experimental detection of such states. We find that the differential conductance and the shot noise exhibit a sub-gap structure which fully reveals the presence of the FF state. Our predictions can be tested in standard two-terminal measurements through InSb/InAs nanowires.

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