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Lukas Windgaetter

Publications and source records attributed to Lukas Windgaetter.

3 recordsLinked to original sources

Theory of time-crystalline behaviour mediated by phonon squeezing in Ta2NiSe5

We theoretically investigate photonic time-crystalline behaviour initiated by optical excitation above the electronic gap of the excitonic insulator candidate $\rm{Ta_2 Ni Se_5}$. We show that after electron photoexcitation, electron-phonon coupling leads to an unconventional squeezed phonon state, characterised by periodic oscillations of phonon fluctuations. Squeezing oscillations lead to photonic time crystalline behaviour. The key signature of the photonic time crystalline behaviour is THz amplification of reflectivity in a narrow frequency band. The theory is supported by experimental results on $\rm{Ta_2 Ni Se_5}$ where photoexcitation with short pulses leads to enhanced terahertz reflectivity with the predicted features. We explain the key mechanism leading to THz amplification in terms of a simplified Hamiltonian whose validity is supported by ab-initio DFT calculations. Our theory suggests that the pumped $\rm{Ta_2 Ni Se_5}$ is a gain medium, demonstrating that squeezed phonon noise may be used to create THz amplifiers in THz communication applications.

cond-mat.str-el↗

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

cond-mat.mes-hall↗

The spontaneous symmetry breaking in Ta$_2$NiSe$_5$ is structural in nature

The excitonic insulator is an electronically-driven phase of matter that emerges upon the spontaneous formation and Bose condensation of excitons. Detecting this exotic order in candidate materials is a subject of paramount importance, as the size of the excitonic gap in the band structure establishes the potential of this collective state for superfluid energy transport. However, the identification of this phase in real solids is hindered by the coexistence of a structural order parameter with the same symmetry as the excitonic order. Only a few materials are currently believed to host a dominant excitonic phase, Ta$_2$NiSe$_5$ being the most promising. Here, we test this scenario by using an ultrashort laser pulse to quench the broken-symmetry phase of this transition metal chalcogenide. Tracking the dynamics of the material's electronic and crystal structure after light excitation reveals surprising spectroscopic fingerprints that are only compatible with a primary order parameter of phononic nature. We rationalize our findings through state-of-the-art calculations, confirming that the structural order accounts for most of the electronic gap opening. Not only do our results uncover the long-sought mechanism driving the phase transition of Ta$_2$NiSe$_5$, but they also conclusively rule out any substantial excitonic character in this instability.

cond-mat.str-el↗