arXiv subjects

Lunjie Zeng

Publications and source records attributed to Lunjie Zeng.

11 recordsLinked to original sources

arXiv2026

Spin-Orbital Hall Nano-Oscillators using PtCr/NiFe

The orbital Hall effect provides a promising route for generating angular-momentum currents beyond conventional spin Hall physics. PtCr alloys exhibit unusually large current-induced torques, but the contribution of orbital transport and the ability of these torques to sustain coherent nonlinear magnetization dynamics remain unresolved. Here we demonstrate spin-orbital Hall nano-oscillators by exploiting a homogeneous heavy-metal/light-metal alloy in which orbital Hall currents generated by Cr are converted by Pt into spin currents, producing giant spin-orbit torques. Using PtCr/NiFe heterostructures, the effective torque efficiency increases from ~0.14 in Pt/NiFe to ~0.40 in Pt0.38Cr0.62/NiFe despite substantial Pt dilution, enabling coherent auto-oscillations with the threshold current density reduced from ~ 1.07 x 10^12 to ~ 4.4 x 10^11 A m^-2. First-principles calculations show that Cr alloying suppresses the intrinsic spin Hall conductivity while enhancing the orbital Hall conductivity, and reproduce the observed torque enhancement only when orbital transport is included. Our combined experimental and first-principles results show that alloy engineering enables giant spin-orbit torques through an intrinsic orbital-mediated contribution, enabling coherent auto-oscillations without engineered multilayers and establishing a scalable materials platform for low-power nonlinear spintronic and orbitronic devices.

cond-mat.mes-hall↗

arXiv2026

Raman scattering of phonon polaritons under nanoscale confinement: the role of structure and environment

Strong light-matter coupling gives rise to polaritons -- quasiparticles that combine both photonic and material characteristics. Here, we show that polar nanocrystals exhibit structure- and environment-dependent Raman scattering, enabled by their hybrid phonon polariton nature. Such dispersive behavior enables refractive index sensing in the mid-infrared range via visible-wavelength inelastic spectroscopy and draws parallels with molecular systems under vibrational strong coupling. Crucially, Raman scattering appears only under nanoscale confinement of phonon polaritons. For optimal structures, this leads to self-hybridization between localized phonon modes and surface phonon polaritons hosted by the same nanoparticle.

physics.optics↗

arXiv2025

Bulk spin-orbit torque-driven spin Hall nano-oscillators using PtBi alloys

Spin-orbit-torque-driven auto-oscillations in spin Hall nano-oscillators (SHNOs) offer a transformative pathway toward energy-efficient, nanoscale microwave devices for next-generation neuromorphic computing and high-frequency technologies. A key requirement for achieving robust, sustained oscillations is reducing the threshold current ($I_{\text{th}}$), strongly governed by spin Hall efficiency ($θ_{\text{SH}}$). However, conventional strategies to enhance $θ_{\text{SH}}$ face trade-offs, including high longitudinal resistivity, interfacial effects, and symmetry-breaking torques that limit performance. Here, we demonstrate a substantial enhancement of the bulk spin Hall effect in PtBi alloys, achieving over a threefold increase in $θ_{\text{SH}}$, from 0.07 in pure Pt to 0.24 in Pt$_{94.0}$Bi$_{6.0}$ and 0.19 in Pt$_{91.3}$Bi$_{8.7}$, as extracted from DC-bias spin-torque ferromagnetic resonance. The enhanced $θ_{\text{SH}}$ originates from bulk-dominated, extrinsic side-jump scattering across all PtBi compositions. Correspondingly, we observe a 42\% and 32\% reduction in $I_{\text{th}}$ in 100 nm SHNOs based on Co$_{40}$Fe$_{40}$B$_{20}$(3 nm)/Pt$_{94.0}$Bi$_{6.0}$(4 nm) and Co$_{40}$Fe$_{40}$B$_{20}$(3 nm)/Pt$_{91.3}$Bi$_{8.7}$(4 nm), respectively. Structural characterization reveals reduced Pt crystallinity, along with emergence of preferred crystallographic orientations upon introducing higher Bi concentrations. Together, these results position PtBi alloys as a compelling alternative to conventional 5$d$ transition metals, enabling enhanced $θ_{\text{SH}}$ and significantly lower $I_{\text{th}}$, thus opening new avenues for energy-efficient neuromorphic computing and magnetic random access memory.

cond-mat.mes-hall↗

arXiv2025

Correlating synthesis, structure and thermal stability of CuBi nanowires for spintronic applications by electron microscopy and in situ scattering methods

Bi-doped copper (Cu1-xBix) nanowires (NWs), promising candidates for spintronic applications due to their potential for a giant spin Hall effect (SHE), were synthesized and their structural properties and thermal stability were investigated. Using template-assisted electrodeposition, Cu1-xBix nanowires with varying bismuth (Bi) content (x=0, 2, 4, and 7%) and different crystalline domain sizes were fabricated. Structural analysis by advanced electron microscopy and X-ray scattering techniques revealed the influence of synthesis conditions on the resulting NW crystal structure and microstructure, including Bi localization (within the lattice or in the grain boundaries), crystallite domain dimensions, and lattice distortions. While NWs with larger crystalline domains allow homogeneous Bi incorporation into the Cu lattice, NWs with smaller crystalline domains exhibit noticeable Bi accumulation at grain boundaries. The thermal stability of the NWs was examined using variable temperature X-ray diffraction and total scattering. Upon heating, lattice distortions consistent with Bi diffusion out of the Cu lattice were observed, with subsequent crystallization of rhombohedral metallic Bi upon cooling. These findings establish a foundation for optimizing the SHE performance of Cu1-xBix nanowires for spintronic devices by correlating synthesis parameters with microstructural features and thermal behavior.

cond-mat.mtrl-sci↗

arXiv2024

Coexistence of non-trivial van der Waals magnetic orders enable field-free spin-orbit torque switching at room temperature

The discovery of van der Waals (vdW) magnetic materials exhibiting non-trivial and tunable magnetic interactions can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realizing magnetization dynamics for energy-efficient and non-volatile spintronic memory and computing technologies. Here, we discover the coexistence of ferromagnetic and antiferromagnetic orders in vdW magnet (Co0.5Fe0.5)5-xGeTe2 (CFGT) CFGT above room temperature, inducing an intrinsic exchange bias and canted perpendicular magnetism. Such non-trivial intrinsic magnetic order enables us to realize energy-efficient, magnetic field-free, and deterministic spin-orbit torque (SOT) switching of CFGT in heterostructure with Pt. The devices show a very large spin Hall conductivity, a low critical current density, and yield a large SOT effective field. These experiments, together with density functional theory and Monte Carlo simulations establish coexisting non-trivial magnetic orders in CFGT that enable field-free SOT magnetization dynamics in spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging

We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).

quant-ph↗

arXiv2023

Gate-tunable Superconductivity in Hybrid InSb-Pb Nanowires

We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side facets. Hard induced superconducting gaps and gate-tunable supercurrent are observed in the hybrid nanowires. These results showcase the promising potential of this material combination for a diverse range of applications in hybrid quantum transport devices.

cond-mat.mes-hall↗

arXiv2023

Scalable fabrication of edge contacts to 2D materials

We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of $ρ_c$ ~ $50$ $Ωμm$, and follow the Landauer quantum limit, $ρ_c \propto n^{-1/2}$, with $n$ being the carrier density of graphene. For $MoS_2$ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of $> 10^6$ at room temperature ( $> 10^9$ at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials.

cond-mat.mes-hall↗

arXiv2021

Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual GaAs nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ~5-20% up to a stress of 1~ 2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ 4D-scanning TEM (STEM) and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.

cond-mat.mtrl-sci↗

arXiv2021

Second harmonic generation in germanium quantum wells for nonlinear silicon photonics

Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V

physics.optics↗

arXiv2020

Epitaxial Pb on InAs nanowires

Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems.

cond-mat.mes-hall↗