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Lutz Schrottke

Publications and source records attributed to Lutz Schrottke.

3 recordsLinked to original sources

GHz control of THz QCL band structure and gain by standing acoustic strain

Active frequency comb generation and waveform control are central challenges in the terahertz (THz) domain. In THz quantum cascade lasers (QCLs), these functions have typically been achieved through active bias modulation, which alters the operating point of the device and imposes severe limitations on its flexibility. To address these challenges, we propose an approach based on the direct modulation of the QCL bandstructure using GHz-frequency standing bulk acoustic waves (BAWs), promising direct and localized control of the optical gain and chromatic dispersion. To this end, we fabricated a bulk acoustic transducer on top of a THz QCL in order to excite GHz standing BAWs within its active region. We demonstrate that radio-frequency driving of the transducer leads to the tunable generation of standing BAWs in 5-12 GHz frequency range with wavelengths commensurate to the QCL period length. The effect of the BAW on the QCL bandstructure is revealed by measuring photoluminescence (PL) of the active region, where the BAW strain leads to a considerable modulation of the PL energy up to a few meV around its non-modulated value. We also develop a model and perform bandstructure simulations to predict the effect of the BAW on the QCL subband structure and gain. These results mark the first demonstration of dynamic bandstructure modulation in a THz QCL using GHz acoustic strain, introducing a fundamentally new paradigm that establishes a powerful synergy between QCLs and BAWs towards coherent control and frequency comb engineering in the THz domain.

physics.optics

A 3.5-THz, x6-Harmonic, Single-Ended Schottky Diode Mixer for Frequency Stabilization of Quantum-Cascade Lasers

Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The dc-grounded anode pad was combined with the radio frequency E-plane probe, which resulted in an electrically compact circuit. At 200 MHz intermediate frequency, a mixer conversion loss of about 59 dB is measured and resulting in a 40 dB signal-to-noise ratio for phase locking 3.5-THz quantum-cascade laser. Using a quasi-static diode model combined with electromagnetic simulations, good agreement with the measured results was obtained. Harmonic frequency converters without the need of cryogenic cooling will help in the realization of highly sensitive space and air-borne heterodyne receivers.

physics.ins-det

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $μ$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 $μ$m.

cond-mat.mtrl-sci