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M. A. Rakitskii

Publications and source records attributed to M. A. Rakitskii.

2 recordsLinked to original sources

Fine structure of the cyclotron resonance in heterobilayers of proximitized graphene and transition metal dichalcogenides

A monolayer graphene and its Dirac electrons can be equipped with an enhanced spin-orbit coupling (SOC) when proximitized by other van der Waals (vdW) materials, such as transition metal dichalcogenides (TMDs). In this work we analyze the cyclotron resonance (CR) absorption of such heterobilayers at quantizing magnetic fields in the presence of proximity-induced spin interactions, including the spin-pseudospin Rashba coupling. We evaluate the spin-textured wave functions of the Landau levels and calculate the absorption spectrum paying special attention to its spin proximity induced modifications. We reveal the formation of a fine double-peak structure of the main interband CR transitions, as well as the presence of additional spin-flip absorption, the combined cyclotron resonance (CCR), centered at different resonant frequencies. The selection rules for CCRs are identified and complemented by the perturbation theory analysis. We also discuss the polarization dependence of the absorption and the proximity-induced emerging magneto-optical responses. Our theory explains the effect of proximity-induced spin interactions for Dirac electrons cyclotron resonance and points out at its experimental verifications.

cond-mat.mes-hall↗

Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems

In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.

cond-mat.other↗