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M. Abouzaid

Publications and source records attributed to M. Abouzaid.

2 recordsLinked to original sources

Quantum cohomology and split generation in Lagrangian Floer theory

Given a finite collection of Lagrangian submanifolds $\mathscr L$ in a compact symplectic manifold $X$, we construct a cyclic, filtered, strictly unital curved $A_{\infty}$ category $\mathcal L$ and develop Floer theory of closed-open maps and open-closed maps. Using them, we prove that, whenever the map from the quantum cohomology of $X$ to the Hochschild cohomology of the Fukaya category $\mathcal L$ with objects $\mathscr L$ is injective, the following consequences follow: (1) any other Lagrangian submanifold equipped with a weak bounding cochain lies in the category split-generated by $\mathscr L$, and (2) the Hochschild homology and cohomology of the Fukaya category are isomorphic to quantum cohomology. In the exact case a similar result was obtained in [Ab]. We also provide some applications.

math.SG

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO films grown at 700 oC with 20 mTorr O2 partial pressure initiated with a columnar growth mode and contained two kinds of domains. These domains were in-plane orientated either ZnO[112-0]//Al2O3[101-0] or ZnO[101-0]//Al2O3[101-0], and were surrounded by highly defective domain boundaries with threading dislocations. The films grown at 800 oC with 1 mTorr O2 showed 2-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112-0]//Al2O3[101-0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between ZnO and the substrate. The formation mechanism of the 30o-twisted domains with the in-plane orientation of ZnO[101-0]//Al2O3[101-0] is discussed.

cond-mat.mtrl-sci