arXiv subjects

M. B. Schilling

Publications and source records attributed to M. B. Schilling.

4 recordsLinked to original sources

arXiv2018

Linear-in-frequency optical conductivity in GdPtBi due to transitions near the triple points

The complex optical conductivity of the half-Heusler compound GdPtBi is measured in a frequency range from 20 to 22 000 cm$^{-1}$ (2.5 meV - 2.73 eV) at temperatures down to 10 K in zero magnetic field. We find the real part of the conductivity, $σ_{1}(ω)$, to be almost perfectly linear in frequency over a broad range from 50 to 800 cm$^{-1}$ ($\sim$ 6 - 100 meV) for $T \leq 50$ K. This linearity strongly suggests the presence of three-dimensional linear electronic bands with band crossings (nodes) near the chemical potential. Band-structure calculations show the presence of triple points, where one doubly degenerate and one nondegenerate band cross each other in close vicinity of the chemical potential. From a comparison of our data with the optical conductivity computed from the band structure, we conclude that the observed nearly linear $σ_{1}(ω)$ originates as a cumulative effect from all the transitions near the triple points.

cond-mat.mes-hall↗

arXiv2018

Optical conductivity of the Weyl semimetal NbP

The optical properties of (001)-oriented NbP single crystals have been studied in a wide spectral range from 6 meV to 3 eV from room temperature down to 10 K. The itinerant carriers lead to a Drude-like contribution to the optical response; we can further identify two pronounced phonon modes and interband transitions starting already at rather low frequencies. By comparing our experimental findings to the calculated interband optical conductivity, we can assign the features observed in the measured conductivity to certain interband transitions. In particular, we find that transitions between the electronic bands spilt by spin-orbit coupling dominate the interband conductivity of NbP below 100 meV. At low temperatures, the momentum-relaxing scattering rate of the itinerant carriers in NbP is very small, leading to macroscopic characteristic length scales of the momentum relaxation of approximately 0.5 $μ$m.

cond-mat.mes-hall↗

arXiv2017

Flat optical conductivity in ZrSiS due to two-dimensional Dirac bands

ZrSiS exhibits a frequency-independent interband conductivity $σ(ω) = \rm{const}(ω) \equiv σ_{\rm{flat}}$ in a broad range from 250 to 2500 cm$^{-1}$ (30 - 300 meV). This makes ZrSiS similar to (quasi)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the transitions between quasi-two-dimensional Dirac bands near the Fermi level. In contrast to graphene, $σ_{\rm{flat}}$ is not supposed to be universal but related to the length of the nodal line in the reciprocal space, $k_{0}$. When $σ_{\rm{flat}}$ and $k_{0}$ are connected by a simple model, we find good agreement between experiment and theory. Due to the spin-orbit coupling, the discussed Dirac bands in ZrSiS possess a small gap $Δ$, for which we determine an upper bound max($Δ$) = 30 meV from our optical measurements. At low temperatures the momentum-relaxation rate collapses, and the characteristic length scale of momentum relaxation is of the order of microns below 50 K.

cond-mat.mes-hall↗

arXiv2017

Two-channel conduction in YbPtBi

We investigated transport, magnetotransport, and broadband optical properties of the half-Heusler compound YbPtBi. Hall measurements evidence two types of charge carriers: highly mobile electrons with a temperature-dependent concentration and low-mobile holes; their concentration stays almost constant within the investigated temperature range from 2.5 to 300 K. The optical spectra (10 meV - 2.7 eV) can be naturally decomposed into contributions from intra- and interband absorption processes, the former manifesting themselves as two Drude bands with very different scattering rates, corresponding to the charges with different mobilities. These results of the optical measurements allow us to separate the contributions from electrons and holes to the total conductivity and to implement a two-channel-conduction model for description of the magnetotransport data. In this approach, the electron and hole mobilities are found to be around 50000 and 10 cm$^{2}$/Vs at the lowest temperatures (2.5 K), respectively.

cond-mat.str-el↗