arXiv subjects

M. Bartoš

Publications and source records attributed to M. Bartoš.

4 recordsLinked to original sources

arXiv2023

Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers

Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in low-dimensional semiconductors. Here we demonstrate that the valley degeneracy of exciton energies in transition metal dichalcogenide monolayers may be lifted by coherent optical interactions on timescales corresponding to few tens of femtoseconds. The optical Stark and Bloch-Siegert effects generated by strong nonresonant circularly-polarized light induce valley-selective blue shifts of exciton quantum levels by more than 30 meV. We show these phenomena by studying the two most intensive exciton resonances in transiton metal dichalcogenide monolayers and compare the results to a theoretical model, which properly includes the Coulomb interaction and exciton dispersion. These results open the door for ultrafast valleytronics working at multiterahertz frequencies.

cond-mat.mes-hall↗

arXiv2022

Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe$_2$ and MoS$_2$

We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe$_2$ and MoS$_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semiconductor Bloch equations. The solutions of the equations are obtained with a modified perturbation technique, which takes into account many-body Coulomb interaction effects. These solutions allow to explain the polarization dependence of the shifts and calculate their values analytically. We found experimentally the limits of the applicability of the theoretical description by observing the transient exciton spectra change due to many-body effects at high field amplitudes of the driving wave.

cond-mat.mes-hall↗

arXiv2020

Breathing modes in few-layer MoTe$_2$ activated by h-BN encapsulation

The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect also vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer TMDs, we investigate low-energy Raman scattering spectra of bi- and trilayer MoTe$_2$. Surprisingly, three breathing modes are observed in the Raman spectra of the structures deposited on or encapsulated in h-BN as compared to a single breathing mode for the flakes deposited on a SiO$_2$/Si substrate. The shear mode is not affected by changing the MoTe$_2$ environment. The emerged structure of breathing modes is ascribed to the apparent interaction between the MoTe$_2$ layer and the bottom h-BN flake. The structure becomes visible due to a high-quality surface of the former flake. Consequently, the observed triple structure of breathing modes originates from the combination modes due to interlayer and layer-substrate interactions. Our results confirm that the h-BN encapsulation affects substantially vibration properties of layered materials.

cond-mat.mes-hall↗

arXiv2019

The effect of metallic substrates on the optical properties of monolayer MoSe$_{2}$

Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflectance contrast techniques. The optical spectra of MoSe$_{2}$ MLs deposited on Pt, Au, Mo and Zr have distinctive metal-related lineshapes. In particular, a substantial variation in the intensity ratio and the energy separation between a negative trion and a neutral exciton is observed. It is shown that using metals as substrates affects the doping of S-TMD MLs. The explanation of the effect involves the Schottky barrier formation at the interface between the MoSe$_{2}$ ML and the metallic substrates. The alignment of energy levels at the metal/semiconductor junction allows for the transfer of charge carriers between them. We argue that a proper selection of metallic substrates can be a way to inject appropriate types of carriers into the respective bands of S-TMDs.

cond-mat.mes-hall↗