arXiv subjects

M. Baumgartner

Publications and source records attributed to M. Baumgartner.

5 recordsLinked to original sources

arXiv2026

Strain-tunable charge localization coupled to complex magnetic orders in EuAl$_4$

Charge localization is particularly interesting when coupled to antiferromagnetic spin structures. Coupled spin-charge orders are well established in elemental chromium and correlated oxide superconductors, yet the interplay between charge order and more complex magnetic textures -- such as skyrmion lattices and chiral spin structures -- remains largely unexplored. Here we report a comprehensive study of how charge localization couples to the unusually rich sequence of magnetic phases in EuAl$_4$. Using x-ray diffraction under applied magnetic field and uniaxial pressure, we demonstrate a direct coupling between the charge and spin order parameters. In the absence of external stimuli, charge localization is markedly enhanced upon entering the magnetically ordered phases. Strikingly, this effect is highly susceptible to strain: uniaxial pressure applied along the charge-order propagation direction further enhances localization, whereas pressure applied perpendicular to it weakens it. Application of magnetic field reveals both competitive and possible collaborative interactions between spin and charge ordering.This flexible coupling between spin and charge ordering opens a new route to designing symmetry-breaking states. Chiral charge order may for example be patterned from spin structures with that symmetry.

cond-mat.str-el↗

arXiv2019

X-ray spectroscopy of current-induced spin-orbit torques and spin accumulation in Pt/3d transition metal bilayers

An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these interfacial magnetic moments onto adjacent 3d transition metal layers by x-ray absorption spectroscopy and x-ray magnetic circular dichroism in a quantitative and element-selective way, with sensitivity below $10^{-5}~μ_B$ per atom. In Pt(6 nm)/Co(2.5 nm), the accumulated spins cause a deviation of the Co magnetization direction, which corresponds to an effective spin-Hall angle of 0.08. The spin and orbital magnetic moments of Co are affected in equal proportion by the absorption of the spin current, showing that the transfer of orbital momentum from the recently predicted orbital Hall effect is either below our detection limit, or not directed to the 3d states of Co. For Pt/NM (NM = Ti, Cr, Cu), we find upper limits for the amount of injected spins corresponding to about $3\times 10^{-6}~μ_B$ per atom.

cond-mat.mtrl-sci↗

arXiv2018

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.

cond-mat.mes-hall↗

arXiv2017

THz electrical writing speed in an antiferromagnetic memory

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band.

physics.app-ph↗

arXiv2016

Antiferromagnetic multi-level memory cell

Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been notoriously difficult to control antiferromagnetic moments by any practical means suitable for device applications. This has left AFs over their hundred years history virtually unexploited and only poorly explored, in striking contrast to the thousands of years of fascination and utility of ferromagnetism. Very recently it has been predicted and experimentally confirmed that relativistic spin-orbit torques can provide the means for efficient electrical control of an AF. Here we place the emerging field of antiferromagnetic spintronics on the map of non-volatile solid state memory technologies. We demonstrate the complete write/store/read functionality in an antiferromagnetic CuMnAs bit cell embedded in a standard printed circuit board communicating with a computer via a USB interface. We show that the elementary-shape bit cells fabricated from a single-layer AF are electrically written on timescales ranging from milliseconds to nanoseconds and we demonstrate their deterministic multi-level switching. The multi-level cell characteristics, reflecting series of reproducible, electrically controlled domain reconfigurations, allow us to integrate memory and signal counter functionalities within the bit cell.

cond-mat.mtrl-sci↗