arXiv subjects

M. Buongiorno Nardelli

Publications and source records attributed to M. Buongiorno Nardelli.

At least 19 recordsLinked to original sources

arXiv2022

aflow++: a C++ framework for autonomous materials design

The realization of novel technological opportunities given by computational and autonomous materials design requires efficient and effective frameworks. For more than two decades, aflow++ (Automatic-Flow Framework for Materials Discovery) has provided an interconnected collection of algorithms and workflows to address this challenge. This article contains an overview of the software and some of its most heavily-used functionalities, including algorithmic details, standards, and examples. Key thrusts are highlighted: the calculation of structural, electronic, thermodynamic, and thermomechanical properties in addition to the modeling of complex materials, such as high-entropy ceramics and bulk metallic glasses. The aflow++ software prioritizes interoperability, minimizing the number of independent parameters and tolerances. It ensures consistency of results across property sets - facilitating machine learning studies. The software also features various validation schemes, offering real-time quality assurance for data generated in a high-throughput fashion. Altogether, these considerations contribute to the development of large and reliable materials databases that can ultimately deliver future materials systems

cond-mat.mtrl-sci↗

arXiv2021

Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides

It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers, but not in the bilayers. We show that a bilayer of 2H-MoS$_2$ is an orbital Hall insulator that exhibits a sizeable OHE in the absence of both spin and valley Hall effects. This phase can be characterised by an orbital Chern number that assumes the value $\mathcal{C}_{L}=2$ for the 2H-MoS$_2$ bilayer and $\mathcal{C}_{L}=1$ for the monolayer, confirming the topological nature of these orbital-Hall insulator systems. Our results are based on density functional theory (DFT) and low-energy effective model calculations and strongly suggest that bilayers of TMDs are highly suitable platforms for direct observation of the orbital Hall insulating phase in two-dimensional materials. Implications of our findings for attempts to observe the VHE in TMD bilayers are also discussed.

cond-mat.mes-hall↗

arXiv2021

Topologically-Driven Linear Magnetoresistance in Helimagnetic FeP

The helimagnet FeP is part of a family of binary pnictide materials with the MnP-type structure which share a nonsymmorphic crystal symmetry that preserves generic band structure characteristics through changes in elemental composition. It shows many similarities, including in its magnetic order, to isostructural CrAs and MnP, two compounds that are driven to superconductivity under applied pressure. Here we present a series of high magnetic field experiments on high quality single crystals of FeP, showing that the resistance not only increases without saturation by up to several hundred times its zero field value by 35 T, but that it also exhibits an anomalously linear field dependence over the entire field range when the field is aligned precisely along the crystallographic c-axis. A close comparison of quantum oscillation frequencies to electronic structure calculations links this orientation to a semi-Dirac point in the band structure which disperses linearly in a single direction in the plane perpendicular to field, a symmetry-protected feature of this entire material family. We show that the two striking features of MR-large amplitude and linear field dependence-arise separately in this system, with the latter likely due to a combination of ordered magnetism and topological band structure.

cond-mat.str-el↗

arXiv2020

Discovery of Higher-Order Topological Insulators using the Spin Hall Conductivity as a Topology Signature

The discovery and realization of topological insulators, a phase of matter which hosts metallic boundary states when the $d$-dimension insulating bulk is confined to ($d-1$)-dimensions, led to several potential applications. Recently, it was shown that protected topological states can manifest in ($d-2$)-dimensions, such as hinge and corner states for three- and two-dimensional systems, respectively. These nontrivial materials are named higher-order topological insulators (HOTIs). Here we show a connection between spin Hall effect and HOTIs using a combination of {\it ab initio} calculations and tight-binding modeling. The model demonstrates how a non-zero bulk midgap spin Hall conductivity (SHC) emerges within the HOTI phase. Following this, we performed high-throughput density functional theory calculations to find unknown HOTIs, using the SHC as a criterion. We calculated the SHC of 693 insulators resulting in seven stable two-dimensional HOTIs. Our work guides novel experimental and theoretical advances towards higher-order topological insulators realization and applications.

cond-mat.mtrl-sci↗

arXiv2019

Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe

Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including ferroelectric switching of Rashba spin texture, suggests that the electron's spin could be controlled by using only electric fields. In this regard, recent experimental studies revealing charge-to-spin interconversion phenomena in two prototypical FERSC, GeTe and SnTe, appear extremely relevant. Here, by employing density functional theory calculations, we investigate spin Hall effect (SHE) in these materials and show that it can be large either in ferroelectric or paraelectric structure. We further explore the compatibility between doping required for the practical realization of SHE in semiconductors and polar distortions which determine Rashba-related phenomena in FERSC, but which could be suppressed by free charge carriers. Based on the analysis of the lone pairs which drive ferroelectricity in these materials, we have found that the polar displacements in GeTe can be sustained up to a critical hole concentration of over $\sim 10^{21}$/cm$^{3}$, while the tiny distortions in SnTe vanish at a minimal level of doping. Finally, we have estimated spin Hall angles for doped structures and demonstrated that the spin Hall effect could be indeed achieved in a polar phase. We believe that the confirmation of spin Hall effect, Rashba spin textures and ferroelectricity coexisting in one material will be helpful for design of novel multifunctional spintronics devices operating without magnetic fields.

cond-mat.mtrl-sci↗

arXiv2018

Long range dynamical coupling between magnetic adatoms mediated by a 2D topological insulator

We study the spin excitation spectra and the dynamical exchange coupling between iron adatoms on a Bi bilayer nanoribbon. We show that the topological character of the edge states is preserved in the presence of the magnetic adatoms. Nevertheless, they couple significantly to the edge spin currents, as witnessed by the large and long-ranged dynamical coupling we obtain in our calcula- tions. The large effective magnetocrystalline anisotropy of the magnetic adatoms combined with the transport properties of the topologically protected edge states make this system a strong candidate for implementation of spintronics devices and quantum information and/or computation protocols.

cond-mat.str-el↗

arXiv2018

On the Emergence of Topologically Protected Boundary States in Topological/Normal Insulator Heterostructures

We have performed a systematic investigation of the formation of topologically protected boundary states (TPBS) in topological/normal insulators (TI/NI) heterostructures. Using a recently developed scheme to construct {\it ab-initio} tight-binding Hamiltonian matrices from density functional theory (DFT) calculations, we studied systems of realistic size with high accuracy and control over the relevant parameters such as TI and NI band alignment, NI gap and spin-orbit coupling strength. Our findings point to the existence of an NI critical thickness for the emergence of TPBS and to the importance of the band alignment between the TI and NI for the appearance of the TPBS. We chose Bi$_{2}$Se$_{3}$ as a prototypical case where the topological/normal insulator behavior is modeled by regions with/without spin-orbit coupling. Finally, we validate our approach comparing our model with fully relativistic DFT calculations for TI/NI heterostructures of Bi$_{2}$Se$_{3}$/Sb$_{2}$Se$_{3}$.

cond-mat.mtrl-sci↗

arXiv2017

Advanced capabilities for materials modelling with Quantum ESPRESSO

Quantum ESPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudo-potential and projector-augmented-wave approaches. Quantum ESPRESSO owes its popularity to the wide variety of properties and processes it allows to simulate, to its performance on an increasingly broad array of hardware architectures, and to a community of researchers that rely on its capabilities as a core open-source development platform to implement theirs ideas. In this paper we describe recent extensions and improvements, covering new methodologies and property calculators, improved parallelization, code modularization, and extended interoperability both within the distribution and with external software.

cond-mat.mtrl-sci↗

arXiv2017

AFLOW$π$: A minimalist approach to high-throughput ab initio calculations including the generation of tight-binding hamiltonians

Tight-binding models provide a conceptually transparent and computationally efficient method to represent the electronic properties of materials. With AFLOW$π$ we introduce a framework for high-throughput first principles calculations that automatically generates tight-binding hamiltonians without any additional input. Several additional features are included in AFLOW$π$ with the intent to simplify the self-consistent calculation of Hubbard U corrections, the calculations of phonon dispersions, elastic properties, complex dielectric constants, and electronic transport coefficients. As examples we show how to compute the optical properties of layered nitrides in the $AM$N$_2$ family, and the elastic and vibrational properties of binary halides with CsCl and NaCl structure.

cond-mat.mtrl-sci↗

arXiv2016

High Throughput combinatorial method for fast and robust prediction of lattice thermal conductivity

The lack of computationally inexpensive and accurate ab-initio based methodologies to predict lattice thermal conductivity, without computing the anharmonic force constants or time-consuming ab-initio molecular dynamics, is one of the obstacles preventing the accelerated discovery of new high or low thermal conductivity materials. The Slack equation is the best alternative to other more expensive methodologies but is highly dependent on two variables: the acoustic Debye temperature, $θ_a$, and the Grüneisen parameter, $γ$. Furthermore, different definitions can be used for these two quantities depending on the model or approximation. In this article, we present a combinatorial approach to elucidate which definitions of both variables produce the best predictions of the lattice thermal conductivity, $κ_l$. A set of 42 compounds was used to test accuracy and robustness of all possible combinations. This approach is ideal for obtaining more accurate values than fast screening models based on the Debye model, while being significantly less expensive than methodologies that solve the Boltzmann transport equation.

cond-mat.mtrl-sci↗

arXiv2013

Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles

The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the results illustrate that the out-of-plane acoustic phonon mode may play the dominant role unlike its close relative - graphene. The small energy of this phonon mode, originating from the weak sp2 bonding between Si atoms, contributes to the high scattering rate and significant degradation in electron transport. In MoS2, the longitudinal acoustic phonons show the strongest interaction with electrons. The key factor in this material appears to be the Q valleys located between the Γ and K points in the first Brillouin zone as they introduce additional intervalley scattering. The analysis also reveals the potential impact of extrinsic screening by other carriers and/or adjacent materials. Subsequent decrease in the actual scattering rate can be drastic, warranting careful consideration. Finally, the effective deformation potential constants are extracted for all relevant intrinsic electron-phonon scattering processes in both materials.

cond-mat.mes-hall↗

arXiv2011

Unexpected Structures for Intercalation of Sodium in Epitaxial Graphene-SiC Interfaces

We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes the graphene. It intercalates in-between single-layer graphene and the carbon-rich interfacial layer. It also penetrates beneath the interfacial layer and decouples it to form a second graphene layer. This decoupling is accelerated by annealing and is verified by direct Na deposition onto the interface layer. Our observations show that intercalation in graphene is fundamentally different than in graphite and is a versatile means of electronic control.

cond-mat.mes-hall↗

arXiv2011

Electron Transport Properties of Bilayer Graphene

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in bilayer than in monolayer graphene, with significantly reduced mobilities and saturation velocities, the calculation also reveals the dominant influence of extrinsic factors such as the substrate and impurities. Accordingly, the difference between two graphene forms are more muted in realistic settings although the velocity-field characteristics remain substantially lower in the bilayer. When bilayer graphene is subject to an interlayer bias, the resulting changes in the energy dispersion lead to stronger electron scattering at the bottom of the conduction band. The mobility decreases significantly with the size of the generated bandgap, whereas the saturation velocity remains largely unaffected.

cond-mat.mes-hall↗

arXiv2010

Electron-Phonon Interactions in Bilayer Graphene: A First Principles Approach

Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In particular, electron-phonon scattering in the lowest conduction band is dominated by six lowest (acoustic and acoustic-like) phonon branches with only minor contributions from optical modes. The total scattering rate at low/moderate electron energies can be described by a simple two-phonon model in the deformation potential approximation with effective constants Dac $\approx$ 15 eV and Dop $\approx 2.8 \times 108$ eV/cm for acoustic and optical phonons, respectively. With much enhanced acoustic phonon scattering, the low field mobility of bilayer graphene is expected to be significantly smaller than that of monolayer graphene.

cond-mat.mes-hall↗

arXiv2010

Surface Polar Phonon Dominated Electron Transport in Graphene

The effects of surface polar phonons on electronic transport properties of monolayer graphene are studied by using a Monte Carlo simulation. Specifically, the low-field electron mobility and saturation velocity are examined for different substrates (SiC, SiO2, and HfO2) in comparison to the intrinsic case. While the results show that the low-field mobility can be substantially reduced by the introduction of surface polar phonon scattering, corresponding degradation of the saturation velocity is not observed for all three substrates at room temperature. It is also found that surface polar phonons can influence graphene electrical resistivity even at low temperature, leading potentially to inaccurate estimation of the acoustic phonon deformation potential constant.

cond-mat.mes-hall↗

arXiv2010

Influence of Carrier-Carrier Scattering on Electron Transport in Monolayer Graphene

The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the vicinity of the Dirac points, it is found that pair-wise collisions in graphene do not conserve the ensemble average velocity in contrast to conventional semiconductors with parabolic energy bands. Numerical results indicate that electron-electron scattering can lead to a decrease in the low field mobility by more than 80% for moderate electron densities. At high densities, the impact gradually diminishes due to increased degeneracy.

cond-mat.mes-hall↗

arXiv2009

First Principles Analysis of Electron-Phonon Interaction in Graphene

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane phonon branches and must be considered simultaneously. Moreover, the calculated scattering rates suggest an acoustic phonon contribution that is much weaker than previously thought, revealing the role of optical phonons even at low energies. Accordingly it is predicted, in good agreement with a recent measurement, that the intrinsic mobility of graphene may be more than an order of magnitude larger than the high values reported in suspended samples.

cond-mat.mes-hall↗

arXiv2009

First principles calculations of lattice thermal conductivity in mono- and bi-layer graphene

Using calculations from first principles we have investigated the lattice thermal conductivity of ideal mono- and bi-layer graphene sheets. Our results demonstrate that the intrinsic thermal conductivity of both mono- and bi-layer graphene is around 2200 W/mK at 300 K, a value close to the one observed theoretically and experimentally in graphite basal plane, and at higher temperatures it decreases with the expected 1/T dependence. The little variation between mono- and bi-layer thermal conductivity suggests that increasing the number of layers does not affect significantly the in-plane thermal properties of these systems.

cond-mat.mtrl-sci↗