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M. Dreyer

Publications and source records attributed to M. Dreyer.

6 recordsLinked to original sources

Multiple Andreev Reflection Effects in Asymmetric STM Josephson Junctions

We have examined the electrical behavior of Josephson junctions formed by a scanning tunneling microscope (STM) with a Nb sample and a Nb tip, with normal-state resistances Rn varying between 1 kOhm and 10 MOhm. Current-voltage characteristics were obtained as a function of Rn by varying the distance between the tip and sample at temperatures of 50 mK and 1.5 K. Rn decreases as the tip-sample separation is reduced, and the junction evolves from a phase-diffusion regime to an underdamped small junction regime, and then to a point contact regime. The subgap structure exhibits pronounced multiple Andreev reflection (MAR) features whose amplitudes and onset energies depend sensitively on junction transparency and gap asymmetry. To interpret these spectra, we generalize the Averin-Bardas MAR theory to superconductors with unequal gap magnitudes, providing a quantitative model appropriate for asymmetric STM junctions. The resulting fits yield the superconducting gaps of the electrodes, barrier transparency, and number of conduction channels as a function of Rn. Combining this analysis with Josephson junction dynamics, we further account for the observed switching and retrapping currents and the finite resistance of the supercurrent branch. Our results demonstrate that incorporating intrinsic electrode asymmetry is essential for reliably extracting transport parameters in STM-based superconducting weak links.

cond-mat.supr-con

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.

cond-mat.mes-hall

Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through $Bi_2Se_3$ samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin doping of $Bi_2Se_3$ samples. Furthermore, the appearance of spin-dependent density of states in current carrying $Bi_2Se_3$ samples has also been observed.

cond-mat.mes-hall

Microwave photon-assisted phase-incoherent Cooper-pair tunneling in a Josephson STM

We have observed photon-assisted Cooper-pair tunneling in an atomic-scale Josephson junction formed between a superconducting Nb tip and a superconducting Nb sample in a scanning tunneling microscope (STM) at 30 mK. High-resolution tunneling spectroscopy data show a zero-bias conduction peak and other sharp sub-gap peaks from coupling of the STM junction to resonances in the electromagnetic environment. The sub-gap peaks respond to incident microwave radiation by splitting into multiple peaks with the position and height depending on the frequency and amplitude of the microwaves. The inter-peak spacing shows that the charge carriers are Cooper pairs, rather than quasiparticles, and the power dependence reveals that the current originates from photon-assisted phase-incoherent tunneling of pairs, rather than the more conventional phase-coherent tunneling of pairs that yields Shapiro steps.

cond-mat.supr-con

A 30 mK, 13.5 T scanning tunneling microscope with two independent tips

We describe the design, construction, and performance of an ultra-low temperature, high-field scanning tunneling microscope (STM) with two independent tips. The STM is mounted on a dilution refrigerator and operates at a base temperature of 30 mK with magnetic fields of up to 13.5 T. We focus on the design of the two-tip STM head, as well as the sample transfer mechanism, which allows \textit{in situ} transfer from an ultra high vacuum (UHV) preparation chamber while the STM is at 1.5 K. Other design details such as the vibration isolation and rf-filtered wiring are also described. Their effectiveness is demonstrated via spectral current noise characteristics and the root mean square roughness of atomic resolution images. The high-field capability is shown by the magnetic field dependence of the superconducting gap of $\text{Cu}_x\text{Bi}_2\text{Se}_3$. Finally, we present images and spectroscopy taken with superconducting Nb tips with the refrigerator at 35 mK that indicate that the effective temperature of our tips/sample is approximately 184 mK, corresponding to an energy resolution of 16 $μ$eV.

cond-mat.mes-hall

Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

We report a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 $μ$m diameter are dry etched in an SF$_6$ plasma in a Reactive Ion Etcher. The gas pressure, etching time and applied power are chosen to produce a self-sharpening effect to obtain the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, and generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi$_2$Se$_3$ at temperatures ranging from 30 mK to 9 K.

cond-mat.mes-hall