arXiv subjects

M. E. Flatté

Publications and source records attributed to M. E. Flatté.

45 records · Page 3Linked to original sources

arXiv2009

Strong-field interactions between a nanomagnet and a photonic cavity

We analyze the interaction of a nanomagnet with a single photonic mode of a microcavity in a fully quantum-mechanical treatment and find that exceptionally large quantum-coherent magnet-photon coupling can be achieved. Coupling terms in excess of several THz are predicted to be achievable in a spherical cavity of ~1 mm radius with a nanomagnet of ~100 nm radius and ferromagnetic resonance frequency of ~200 GHz. Eigenstates of the magnet-photon system correspond to entangled states of spin orientation and photon number, in which over 10^5 values of each quantum number are represented; conversely initial (coherent) states of definite spin and photon number evolve dynamically to produce large oscillations in the microwave power (and nanomagnet spin orientation), and are characterized by exceptionally long dephasing times.

cond-mat.mes-hall↗

arXiv2008

Size dependent exciton g-factor in self-assembled InAs/InP quantum dots

We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots have systematically been investigated by analyzing single dot magneto-luminescence between 1200nm and 1600 nm. We demonstrate a strong dependence of the exciton g-factor on the height and diameter of the quantum dots, which eventually gives rise to a sign change of the g-factor. The observed correlation between exciton g-factor and the size of the dots is in good agreement with calculations. Moreover, we find a size dependent anisotropy splitting of the exciton emission in zero magnetic field.

cond-mat.mes-hall↗

arXiv2008

Overhauser frequency shifts in semiconductor nanostructures

We calculate the Overhauser frequency shifts in semiconductor nanostructures resulting from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins. The frequency shifts depend on the electronic local density of states and spin polarization as well as the electronic and nuclear spin relaxation mechanisms. Unlike previous calculations, our method accounts for the electron confinement in low dimensional semiconductor nanostructures, resulting in both nuclear spin polarizations and Overhauser shifts that are strongly dependent on position. Our results explain previously puzzling measurements of Overhauser shifts in an Al$_x$Ga$_{1-x}$As parabolic quantum well by showing the connection between the electron spin lifetime and the frequency shifts.

cond-mat.mtrl-sci↗

arXiv2007

Onset of ferromagnetism in low-doped GaMnAs

We develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of GaMnAs and compare with experimental measurements of a series of samples whose compositions span the transition from paramagnetic insulating to ferromagnetic conducting behavior. The theoretical Curie temperatures depend sensitively on the local fluctuations in the Mn-hole binding energy, which originates from disorder in the Mn distribution as well as the presence of As antisite defects. The experimentally-determined hopping energy at the Curie temperature is roughly constant over a series of samples whose conductivities vary more than 10^4 and whose hole concentrations vary more than 10^2. Thus in this regime the hopping energy is an excellent predictor of the Curie temperature for a sample, in agreement with the theory.

cond-mat.mtrl-sci↗

arXiv2005

Spatial structure of Mn-Mn acceptor pairs in GaAs

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates.

cond-mat.mtrl-sci↗

arXiv2004

Heterostructure unipolar spin transistors

We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The current of base majority spin electrons to the collector limits the performance of ``homojunction'' unipolar spin transistors, in which the emitter, base, and collector all are made from the same magnetic material. This current is very similar in origin to the current of base majority carriers to the emitter in homojunction bipolar junction transistors. The current in bipolar junction transistors can be reduced or nearly eliminated through the use of a wide band gap emitter. We find that the choice of a collector material with a larger equilibrium spin splitting than the base will similarly improve the device performance of a unipolar spin transistor. We also find that a graded variation in the base spin splitting introduces an effective drift field that accelerates minority carriers through the base towards the collector.

cond-mat.mes-hall↗

arXiv2004

Control of Electron Spin Coherence Using Landau Level Quantization in a Two-Dimensional Electron Gas

Time-resolved optical measurements of electron spin dynamics in modulation doped InGaAs quantum wells are used to explore electron spin coherence times and spin precession frequencies in a regime where an out of plane magnetic field quantizes the states of a two-dimensional electron gas into Landau levels. Oscillatory features in the transverse spin coherence time and effective g-factor as a function of applied magnetic field exhibit a correspondence with Shubnikov-de Haas oscillations, illustrating a coupling between spin and orbital eigenstates. We present a theoretical model in which inhomogeneous dephasing due to the population of different Landau levels limits the spin coherence time and captures the essential experimental results.

cond-mat.mes-hall↗

arXiv2003

Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits

A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly influenced by the dot geometry so the spin may be more polarized than the emitted light would naively suggest. We have calculated carrier polarization-dependent optical matrix elements using 8-band strain-dependent k.p theory for InAs/GaAs self-assembled quantum dots (SAQDs) for electron and hole spin injection into a range of quantum dot sizes and shapes, and for arbitrary emission directions. The observed circular polarization does not depend on whether the injected spin-polarized carriers are electrons or holes, but is strongly influenced by the SAQD geometry and emission direction. Calculations for typical SAQD geometries with emission along [110] show light that is only ~5% circularly polarized for spin states that are 100% polarized along [110]. Therefore observed polarizations [Chye et al. PRB 66, 201301(R)] of ~1% imply a spin polarization within the dot of ~20%. We also find that measuring along the growth direction gives near unity conversion of spin to photon polarization, and is the least sensitive to uncertainties in SAQD geometry.

cond-mat↗

arXiv2002

Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots

Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.

quant-ph↗