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M. E. Zvanut

Publications and source records attributed to M. E. Zvanut.

4 recordsLinked to original sources

Charge-state control of carbon-related optical absorption in AlN

Sub-bandgap optical absorption in AlN between 2 eV and 4 eV is widely observed, but its microscopic origin remains contested. Using photo-induced electron paramagnetic resonance (photo-EPR) and optical absorption spectroscopy on the same samples, we demonstrate a correlation between this absorption band and the neutral charge state of substitutional carbon on the nitrogen site (C$_N$). Hybrid functional calculations of the optical absorption spectra show that a transition involving C$_N$ and the valence band occurs near 3.3 eV, which agrees well with a peak identified within the measured optical absorption between 2 eV and 4 eV. This conclusion requires the combined ability to manipulate the charge state of carbon using photo-EPR and to use first-principles calculations of the absorption line shape that account for the dispersion of the valence band and the energy dependence of the optical matrix elements.

cond-mat.mtrl-sci

Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation

We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX-center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra is observed upon photoexcitation with photon energies greater than ~1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.

cond-mat.mtrl-sci

Direct evidence for carbon incorporation on the nitrogen site in AlN

We use photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations to identify and explain the properties of carbon in AlN. We present clear evidence for carbon substitution on the nitrogen site (C$_{\rm N}$). We also clarify the origin of a widely observed EPR spectra in AlN that, although often attributed to a deep donor defect, we demonstrate is surprisingly due to C$_{\rm N}$. Finally, we show the presence of C$_{\rm N}$ is consistent with the absorption spectra at 4.7 eV observed in AlN.

cond-mat.mtrl-sci

High Field Phenomena of Qubits

Electron and nuclear spins are very promising candidates to serve as quantum bits (qubits) for proposed quantum computers, as the spin degrees of freedom are relatively isolated from their surroundings, and can be coherently manipulated e.g. through pulsed EPR and NMR. For solid state spin systems, impurities in crystals based on carbon and silicon in various forms have been suggested as qubits, and very long relaxation rates have been observed in such systems. We have investigated a variety of these systems at high magnetic fields in our multi-frequency pulsed EPR/ENDOR spectrometer. A high magnetic field leads to large electron spin polarizations at helium temperatures giving rise to various phenomena that are of interest with respect to quantum computing. For example, it allows the initialization of the both the electron spin as well as hyperfine-coupled nuclear spins in a well defined state by combining millimeter and RF radiation; it can increase the T2 relaxation times by eliminating decoherence due to dipolar interaction; and it can lead to new mechanisms for the coherent electrical readout of electron spins. We will show some examples of these and other effects in Si:P, SiC:N, and nitrogen-related centers in diamond.

quant-ph