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M. Gmitra

Publications and source records attributed to M. Gmitra.

18 recordsLinked to original sources

Exchange and spin-orbit proximity driven topological and transport phenomena in twisted graphene/CrI$_3$ heterostructures

We present results of comprehensive first-principles and kp-method studies of electronic, magnetic, and topological properties of graphene on a monolayer of CrI$_3$. First, we identify a twist angle between the graphene and CrI$_3$, that positions the graphene Dirac cones within the bandgap of CrI$_3$. Then, we derive the low-energy effective Hamiltonian describing electronic properties of graphene Dirac cones. Subsequently, we examine anomalous and valley Hall conductivity and discuss possible topological phase transition from a quantum anomalous Hall insulator to a trivial insulating state, concomitant a change in the magnetic ground state of CrI$_3$. These findings highlight the potential of strain engineering in two-dimensional van der Waals heterostructures for controlling topological and magnetic phases.

cond-mat.mes-hall

Disorder- and magnetic field-tuned fermionic superconductor-insulator transition in MoN thin films. Transport and STM studies

Superconductor-insulator transition (SIT) driven by disorder and transverse magnetic field has been investigated in ultrathin MoN films by means of transport measurements and scanning tunneling microscopy and spectroscopy. Upon decreasing thickness, the homogeneously disordered films show increasing sheet resistance Rs, shift of the superconducting transition Tc to lower temperatures with the 3 nm MoN being the last superconducting film and thinner films already insulating. Fermionic scenario of SIT is evidenced by applicability of the Finkelsteins model, by the fact that Tc and the superconducting gap are coupled with a constant ratio, and by the spatial homogeneity of the superconducting and electronic characteristics. The logarithmic anomaly found in the tunneling spectra of the non-superconducting films is further enhanced in increased magnetic field due to the Zeeman spin effects driving the system deeper into the insulating state and pointing also to fermionic SIT.

cond-mat.supr-con

Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature

Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that $T_1$ is markedly different from $T_2$. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of $100$ ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of $\sim 70~\mu$m, suggesting that thin films of graphite -- or multilayer AB graphene stacks -- can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations.

cond-mat.mes-hall

Influence of Structural Defects on Charge Density Waves in 1T-TaS2

The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectively behaves as a dopant, leading to band bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved by local density of states (LDOS) mapping with STS. We correlate atomically-resolved STM periodicity of defect-free 1T-TaS2 to top sulfur atoms and introduce tiling of the surface using equiangular hexagon. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure by introducing sulfur vacancy or substituting sulfur with oxygen. The sulfur vacancy is characterized by metallic properties and is identified as an origin of one of observed experimentally defects. Whereas in the case of the latter, the oxidation of 1T-TaS2 is found to result in the loss of magnetic properties expected in defect-free material.

cond-mat.mtrl-sci

Electric-field modification of interfacial spin-orbit field-vector

Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnet's magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly desirable to control iSOFs by the field-effect, where power consumption is determined by charging/discharging a capacitor5,6. In particular, efficient electric-field control of iSOFs acting on ferromagnetic metals is of vital importance for practical applications. It is known that in single crystalline Fe/GaAs (001) heterostructures with C2v symmetry, interfacial SOFs emerge at the Fe/GaAs (001) interface due to the lack of inversion symmetry7,8. Here, we show that by applying a gate-voltage across the Fe/GaAs interface, interfacial SOFs acting on Fe can be robustly modulated via the change of the magnitude of the interfacial spin-orbit interaction. Our results show that, for the first time, the electric-field in a Schottky barrier is capable of modifying SOFs, which can be exploited for the development of low-power-consumption spin-orbit torque devices.

cond-mat.mes-hall

Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors

The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric field induced magnetization reversal. This provides firm evidence of effective multiferroic coupling which opens up magnetoelectric functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching entangled with Rashba-Zeeman splitting in a multiferroic system.

cond-mat.mtrl-sci

Band-structure topologies of graphene: spin-orbit coupling effects from first principles

The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap at the $K(K')$-point of the magnitude of 24 $μ$eV (0.28 K). This intrinsic splitting comes 96% from the usually neglected $d$ and higher orbitals. The electric field induces an additional (extrinsic) Bychkov-Rashba-type splitting of 10 $μ$eV (0.11 K) per V/nm, coming from the $σ$-$π$ mixing. A 'mini-ripple' configuration with every other atom is shifted out of the sheet by less than 1% differs little from the intrinsic case.

cond-mat.mtrl-sci

Electron spin relaxation in graphene: the role of the substrate

Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which leads to spin relaxation by the D'yakonov-Perel' mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds.

cond-mat.mes-hall

Angular dependence of the tunneling anisotropic magnetoresistance

Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenomenological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser {\it et al.}, Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated.

cond-mat.mes-hall

Correlation of the angular dependence of spin-transfer torque and giant magnetoresistance in the limit of diffusive transport in spin valves

Angular variation of giant magnetoresistance and spin-transfer torque in metallic spin-valve heterostructures is analyzed theoretically in the limit of diffusive transport. It is shown that the spin-transfer torque in asymmetric spin valves can vanish in non-collinear magnetic configurations, and such a non-standard behavior of the torque is generally associated with a non-monotonic angular dependence of the giant magnetoresistance, with a global minimum at a non-collinear magnetic configuration.

cond-mat.other

Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs

Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and magnetic control of the electrical properties, essentially the I-V characteristics, and vice versa. There are great challenges ahead to meet these goals. One challenge is to find niche applications for ferromagnetic semiconductors, such as GaMnAs. Another is to develop further the science of hybrid ferromagnetic metal/semiconductor heterostructures, as alternatives to all-semiconductor room temperature spintronics. Here we present our representative recent efiorts to address such challenges. We show how to make a digital magnetoresistor by combining two magnetic resonant diodes, or how introducing ferromagnetic semiconductors as active regions in resonant tunneling diodes leads to novel efiects of digital magnetoresistance and of magnetoelectric current oscillations. We also discuss the phenomenon of tunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing the concept of the spin-orbit coupling field, as an analog of such fields in all-semiconductor junctions. Finally, we look at fundamental electronic and optical properties of GaMnAs by employing reasonable tight-binding models to study disorder efiects.

cond-mat.mtrl-sci

Thermally Assisted Current-Driven Bistable Precessional Regimes in Asymmetric Spin Valves

Spin-transfer torque in asymmetric spin valves can destabilize both parallel and antiparallel configurations and can lead to precessional modes also in the absence of an external magnetic field. We find a bistable precessional regime in such systems and show that thermal fluctuations can excite transitions (telegraph noise) between the corresponding oscillatory regimes that are well separated by irreversible paths at low temperatures. Because of the thermally induced transitions, the frequency of the resulting current-driven oscillations is different from that obtained at very low temperatures. We also show that the power spectrum in the bistable region is dominated by the out-of-plane oscillatory mode.

cond-mat.mes-hall

The critical properties of the agent-based model with environmental-economic interactions

The steady-state and nonequilibrium properties of the model of environmental-economic interactions are studied. The interacting heterogeneous agents are simulated on the platform of the emission dynamics of cellular automaton. The model possess the discontinuous transition between the safe and catastrophic ecology. Right at the critical line, the broad-scale power-law distributions of emission rates have been identified. Their relationship to Zipf's law and models of self-organized criticality is discussed.

physics.soc-ph

Current-driven destabilization of both collinear configurations in asymmetric spin-valves

Spin transfer torque in spin valves usually destabilizes one of the collinear configurations (either parallel or antiparallel) and stabilizes the second one. Apart from this, balance of the spin-transfer and damping torques can lead to steady precessional modes. In this letter we show that in some asymmetric nanopillars spin current can destabilize both parallel and antiparallel configurations. As a result, stationary precessional modes can occur at zero magnetic field. The corresponding phase diagram as well as frequencies of the precessional modes have been calculated in the framework of macrospin model. The relevant spin transfer torque has been calculated in terms of the macroscopic model based on spin diffusion equations.

cond-mat.mes-hall

The co-evolutionary dynamics of directed network of spin market agents

The spin market model [S. Bornholdt, Int.J.Mod.Phys. C 12 (2001) 667] is extended into co-evolutionary version, where strategies of interacting and competitive traders are represented by local and global couplings between the nodes of dynamic directed stochastic network. The co-evolutionary principles are applied in the frame of Bak - Sneppen self-organized dynamics [P. Bak, K. Sneppen, Phys. Rev. Letter 71 (1993) 4083] that includes the processes of selection and extinction actuated by the local (node) fitness. The local fitness is related to orientation of spin agent with respect to instant magnetization. The stationary regime characterized by a fat tailed distribution of the log-price returns with index $α\simeq 3.6$ (out of the Levy range) is identified numerically. The non-trivial consequence of the extremal dynamics is the partially power-law decay (an effective exponent varies between -0.3 and -0.6) of the autocorrelation function of volatility. Broad-scale network topology with node degree distribution characterized by the exponent $γ=1.8$ from the range of social networks is obtained.

nlin.AO

Properties of iterative Monte Carlo single histogram reweighting

We present iterative Monte Carlo algorithm for which the temperature variable is attracted by a critical point. The algorithm combines techniques of single histogram reweighting and linear filtering. The 2d Ising model of ferromagnet is studied numerically as an illustration. In that case, the iterations uncovered stationary regime with invariant probability distribution function of temperature which is peaked nearly the pseudocritical temperature of specific heat. The sequence of generated temperatures is analyzed in terms of stochastic autoregressive model. The error of histogram reweighting can be better understood within the suggested model. The presented model yields a simple relation, connecting variance of pseudocritical temperature and parameter of linear filtering.

cond-mat.stat-mech

Macroscopic description of current induced switching due to spin-transfer

We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion equations for the distribution functions used in the theory of CPP-GMR, ii) the relevant boundary conditions for the longitudinal and transverse components of the spin current in the situation of quasi-interfacial absorption of the transverse components in a magnetic layer. The torque is expressed as a function of the usual parameters derived from CPP-GMR experiments and two additional parameters involved in the transverse boundary conditions. Our model is used to describe qualitatively normal and inverse switching phenomena studied in recent experiments. We also present a structure for which we predict only states of steady precession above a certain critical current. We finally discuss the limits of a small angle between magnetic moments of the ferromagnetic layers and of vanishing imaginary part of the mixing conductance.

cond-mat.mes-hall