arXiv subjects

M. Grundmann

Publications and source records attributed to M. Grundmann.

7 recordsLinked to original sources

arXiv2020

Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination

We investigate the phase diagram of the heterostructural solid solution (InxGa1-x)2O3 both computationally, by combining cluster expansion and density functional theory, and experimentally, by means of TEM measurements of pulsed laser deposited (PLD) heteroepitaxial thin films. The shapes of the Gibbs free energy curves for the monoclinic, hexagonal and cubic bixbyite alloy as a function of composition can be explained in terms of the preferred cation coordination environments of indium and gallium. We show by atomically resolved STEM that the strong preference of indium for six-fold coordination results in ordered monoclinic and hexagonal lattices. This ordering impacts the configurational entropy in the solid solution and thereby the (InxGa1-x)2O3 phase diagram. The resulting phase diagram is characterized by very limited solubilities of gallium and indium in the monoclinic, hexagonal and cubic ground state phases respectively but exhibits wide metastable ranges at realistic growth temperatures. On the indium rich side of the phase diagram a wide miscibility gap is found, which results in phase separated layers. The experimentally observed indium solubilities in the PLD samples are in the range of x=0.45 and x=0.55 for monoclinic and hexagonal single-phase films, while for phase separated films we find x=0.5 for the monoclinic phase, x=0.65-0.7 for the hexagonal phase and x>0.9 for the cubic phase. These values are consistent with the computed metastable ranges for each phase.

cond-mat.mtrl-sci↗

arXiv2016

Photo-enhanced magnetization in Fe-doped ZnO nanowires

An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures being compatible with the actual technology. Here we show that the ferromagnetic magnetization of low Fe-doped ZnO nanowires prepared by carbothermal process is enhanced under illumination up to temperatures slightly below room temperature. This enhancement is related to the existence of an oxygen vacancy V$_{\rm O}$ in the neighbouring of an antiferromagnetic superexchange Fe$^{3+}$-Fe$^{3+}$ pair. Under illumination the V$_{\rm O}$ is ionized to V$_{\rm O}^+$ giving an electron to a close Fe$^{3+}$ ion from the antiferromagnetic pair. This light excited electron transition allows the transition of Fe$^{3+}$ to Fe$^{2+}$ forming stable ferromagnetic double exchange pairs, increasing the total magnetization. The results here presented indicate an efficient way to influence the magnetic properties of ZnO based nanostructures by light illumination at high temperatures.

cond-mat.mtrl-sci↗

arXiv2015

Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.

cond-mat.mtrl-sci↗

arXiv2015

Discrete relaxation of exciton-polaritons in an inhomogeneous potential

We present indications, that the wave function-stiffness condition during energy-relaxation as observed in single-phase state quantum systems manifests also in a single particle ensemble. This is demonstrated for exciton-polaritons in the strong coupling regime in a ZnO-based microcavity at T = 10 K for non-resonant excitation. It is well known that the pump-induced spatially inhomogeneous background potential leads to nearly equally spaced energy levels in the k-space distribution for propagating polariton Bose-Einstein condensates. Surprisingly this particular pattern is also observable for uncondensed exciton-polaritons.

cond-mat.mes-hall↗

arXiv2014

Phonon-Assisted Lasing in ZnO Microwires at Room Temperature

We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets are prerequisite. Above the excitation threshold power $P_{\textit{Th}}$ of typically $100\,kW/cm^2$, the recombination of free excitons under emission of two longitudinal optical phonons provides sufficient gain to overcome all losses in the microresonator and to result in laser oscillation. This threshold behavior is accompanied by a distinct change of the far and near field emission patterns, revealing the WGM related nature of the lasing modes. The spectral evolution as well as the characteristic behavior of the integrated photoluminescence intensity versus the excitation power unambiguously prove laser operation. Polarization-resolved measurements show that the laser emission is linear polarized perpendicular to the microwire axis (TE).

cond-mat.mtrl-sci↗

arXiv2009

Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?

Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases (Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified as the source for ferromagnetism. Due to their different crystallographic orientation with respect to the host crystal these nanocrystals in some cases are very difficult to be detected by a simple Bragg-Brentano scan. This results in the pitfall of using XRD to exclude secondary phase formation in DMS materials. For comparison, the solubility of Co diluted in ZnO films ranges between 10 and 40 at.% using different growth conditions pulsed laser deposition. Such diluted, Co-doped ZnO films show paramagnetic behaviour. However, only the magnetoresistance of Co-doped ZnO films reveals possible s-d exchange interaction as compared to Co-implanted ZnO single crystals.

cond-mat.mtrl-sci↗

arXiv2009

Andreev reflections at large ferromagnet/high-T_C superconductor area junctions with rough interface

Sub-gap conductance at a large area junction with a rough interface of a ferromagnet and a high-T$_{C}$ superconductor is superimposed by multiple peaks which is not expected from an ideal point contact Andreev reflection process. We demonstrate this phenomenon by measuring resistance as a function of bias voltage of a Co/Y$_{1}$Ba$_{2}$Cu$_{3}$O$_{7-δ}$ junction with contact area 50 x 70 $μ$ $m^{2}$ at various temperatures. In order to analyze such Andreev reflection data, the interface is assumed to have random potentials which can create local electric fields. The Blonder-Tinkham-Klapwijk theory is modified with the inclusion of a broadening parameter due to finite life time effects of quasi particles. An additional voltage drop due to local electric fields at the rough interface has been included in terms of an extra energy shift which may be related to the asymmetry of normalized resistance data. Spin polarization has been introduced for the ferromagnet. The presented model explains the multi-peak nature and asymmetry of Andreev reflection data experimentally observed at large area junctions. Extension of the model also interprets the experimentally observed anomalous enhancement of resistance peaks in the sub-gap region which may result from crossing the critical current limit across the junction.

cond-mat.supr-con↗