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M. Guina

Publications and source records attributed to M. Guina.

2 recordsLinked to original sources

Robust watt-level continuous-wave deep-ultraviolet lasers near 230 nm

Continuous-wave (CW) deep-ultraviolet (DUV) lasers near 230~nm enable laser cooling of AlF, Cd, and Zn, but second-harmonic generation below 237~nm relies in practice on beta-barium borate (BBO), whose walk-off and UV-induced degradation hinder sustained operation. We demonstrate compact, affordable VECSEL-based systems informed by four years of operating 14 DUV cavities in 12 laser systems across six European laboratories. External LBO cavities produce nearly 4~W at 463~nm with 94% cavity efficiency. We compare spherically and elliptically focused Brewster-cut BBO cavities with a normal-incidence AR-coated design. The AR-coated cavity delivers the highest power and efficiency, reaching 1.0~W at 51% cavity and 44% external efficiency; the spherical Brewster cavity reaches 700~mW and maintains constant circulating power over 70~h, while elliptical focusing reduces peak intensity sixfold and improves beam quality, albeit with greater alignment sensitivity. Collaboration-designed DUV optics, AlF spectroscopy, and Cd trapping validate the system.

physics.atom-ph

VECSEL systems for quantum information processing with trapped beryllium ions

Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a novel gain mirror based on GaInNAs/GaAs quantum-wells, enabling wavelength extension with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped $^{9}$Be$^{+}$ ions and to implement quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates, and more broadly, our results extend the capabilities of VECSEL systems for applications in atomic, molecular, and optical physics.

physics.atom-ph