arXiv subjects

M. Hanson

Publications and source records attributed to M. Hanson.

At least 19 recordsLinked to original sources

arXiv2016

Measurement of exciton correlations using electrostatic lattices

We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved.

cond-mat.mes-hall↗

arXiv2016

DGSAT: Dwarf Galaxy Survey with Amateur Telescopes I. Discovery of low surface brightness systems around nearby spiral galaxies

Context: We introduce the Dwarf Galaxy Survey with Amateur Telescopes (DGSAT) project and report the discovery of eleven low surface brightness (LSB) galaxies in the fields of the nearby galaxies NGC 2683, NGC 3628, NGC 4594 (M104), NGC 4631, NGC 5457 (M101), and NGC 7814. Aims: The DGSAT project aims to use the potential of small-sized telescopes to probe LSB features around large galaxies and to increase the sample size of the dwarf satellite galaxies in the Local Volume. Methods: Using long exposure images, fields of the target spiral galaxies are explored for extended low surface brightness objects. After identifying dwarf galaxy candidates, their observed properties are extracted by fitting models to their light profiles. Results: We find three, one, three, one, one, and two new LSB galaxies in the fields of NGC 2683, 3628, 4594, 4631, 5457, and 7814, respectively. In addition to the newly found galaxies, we analyse the structural properties of nine already known galaxies. All of these 20 dwarf galaxy candidates have effective surface brightnesses in the range $25.3\lesssimμ_{e}\lesssim28.8$ mag.arcsec$^{-2}$ and are fit with Sersic profiles with indices $n\lesssim 1$. Assuming that they are in the vicinity of the above mentioned massive galaxies, their $r$-band absolute magnitudes, their effective radii, and their luminosities are in the ranges $-15.6 \lesssim M_r \lesssim -7.8$, 160 pc $\lesssim R_e \lesssim$ 4.1 kpc, and $0.1\times 10^6 \lesssim\left(\frac{L}{L_{\odot}}\right)_r\lesssim127 \times 10^6$, respectively. To determine whether these LSB galaxies are indeed satellites of the above mentioned massive galaxies, their distances need to be determined via further observations. Conclusions: Using small telescopes, we are readily able to detect LSB galaxies with similar properties to the known dwarf galaxies of the Local Group.

astro-ph.GA↗

arXiv2016

Indirect excitons in a potential energy landscape created by a perforated electrode

We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp increases with increasing exciton density. This effect is explained in terms of disorder screening by repulsive exciton-exciton interactions.

cond-mat.mes-hall↗

arXiv2014

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz. Applications to medicine, communications, security and other fields are emerging. However, mapping the coldest parts of the universe has been the largest driver for developing THz detectors. The result is a family of exquisitely-sensitive detectors requiring sub-4K temperatures. For earthbound THz science and technology, sensitivity remains important but many applications require high speed and operating temperatures. Room-temperature Schottky diodes enable some of these applications. Here we demonstrate a new type of detector in which THz radiation excites a collective oscillation of ~25,000 electrons between two gates in a microscopic four terminal transistor. The energy dissipates into other modes of the electron gas, warming it and changing the source-drain resistance. The detector shows amplifier-limited rise times near 1 ns and has detected THz laser radiation at temperatures up to 120K. The frequency of the collective oscillation tunes with small gate voltages. The first-generation tunable antenna-coupled intersubband Terahertz (TACIT) detectors tune between 1.5 and 2 THz with voltages <2V.

cond-mat.mes-hall↗

arXiv2014

Stirring Potential for Indirect Excitons

We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency.

cond-mat.mes-hall↗

arXiv2013

Optically Controlled Excitonic Transistor

Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.

cond-mat.mes-hall↗

arXiv2013

Pattern Formation in the Exciton Inner Ring

We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization.

cond-mat.mes-hall↗

arXiv2012

Transport of Indirect Excitons in a Potential Energy Gradient

We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with increasing density and temperature.

cond-mat.mes-hall↗

arXiv2011

Electrostatic Conveyer for Excitons

We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.

cond-mat.mes-hall↗

arXiv2009

Excitonic switches at 100 K temperatures

Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits and fast photonic switches have been realized [1,2,3,4,5,6]. Recently, proof of principle of exciton optoelectronic devices was demonstrated [7,8]. Potential advantages of excitonic devices include high operation and interconnection speed, small dimensions, and the opportunity to combine many elements into integrated circuits. Here, we demonstrate experimental proof of principle for the operation of excitonic switching devices at temperatures around 100 K. The devices are based on an AlAs/GaAs coupled quantum well structure and include the exciton optoelectronic transistor (EXOT), the excitonic bridge modulator (EXBM), and the excitonic pinch-off modulator (EXPOM). This is a two orders of magnitude increase in the operation temperature compared to the earlier devices, where operation was demonstrated at 1.5 K [7,8].

cond-mat.mes-hall↗

arXiv2009

Collection of indirect excitons in a diamond-shaped electrostatic trap

We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.

cond-mat.mes-hall↗

arXiv2009

Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.

cond-mat.mes-hall↗

arXiv2005

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth.

cond-mat.mtrl-sci↗

arXiv2005

Excitons in Electrostatic Traps

We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps.

cond-mat.mes-hall↗

arXiv2004

Stoner-Wohlfart model applied to bicrystal magnetoresistance hysteresis

We calculate numerically the magnetization direction as function of magnetic field in the Stoner-Wohlfart theory and are able to reproduce the shape of the low-field magnetoresistance hysteresis observed in manganite grain boundary junctions. Moreover, we show that it is necessary to include biaxial magnetocrystalline anisotropy to fully describe the grain boundary magnetoresistance in La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ bicrystal tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2003

Few-electron quantum dots for quantum computing

Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots, and allows the number of electrons to be controlled down to zero. The Zeeman energy of several electronic states in one of the dots was measured with an in-plane magnetic field, and the g-factor of the states was found to be no different than that of electrons in bulk GaAs. Tunnel-coupling between dots is demonstrated, and the tunneling strength was estimated from the peak splitting of the Coulomb blockade peaks of the double dot.

cond-mat.mes-hall↗

arXiv2003

Voltage control of nuclear spin in ferromagnetic Schottky diodes

We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin polarization that is imprinted by the ferromagnet acts on conduction electron spins as an effective magnetic field. We demonstrate tuning of this nuclear field from <0.05 to 2.4 kG by varying a small bias voltage across the MnAs device. In addition, a connection is observed between the diode turn-on and the onset of imprinted nuclear polarization, while traditional dynamic nuclear polarization exhibits relatively little voltage dependence.

cond-mat.mes-hall↗

arXiv2003

Spatial Imaging of Magnetically Patterned Nuclear Spins in GaAs

We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope with approximately 1 micron spatial resolution uses electron spin precession to directly image the GaAs nuclear polarization. These measurements indicate that the polarization varies from a maximum under magnetic mesas to zero several microns from the mesa perimeter, resulting in large (10**4 T/m) effective field gradients. The results reveal a flexible scheme for lateral engineering of spin-dependent energy landscapes in the solid state.

cond-mat.mes-hall↗