arXiv subjects

M. Hehn

Publications and source records attributed to M. Hehn.

At least 19 recordsLinked to original sources

arXiv2025

Dissipation properties of anomalous Hall effect: intrinsic vs. extrinsic magnetic materials

A comparative study of anomalous-Hall current injection and anisotropic current injection (through planar Hall effect) are studied in Hall devices contacted to a lateral load circuit. Hall currents are injected into the load circuit from three different kinds of magnetic Hall bars: Mn5Si3 altermagnet, Co75Gd25 ferrimagnet, and Ni80Fe20 ferromagnet. The current, the voltage and the power are measured as a function of the load resistance and the Hall angle. It is observed that the power dissipated for the three kinds of materials fellow the same law as a function of load resistance and Hall angle, at the leading order in the Hall angle. Since the anomalous Hall effect in the altermagnetic Hall-bar is due to the intrinsic topological structure (i.e. due to the presence of a Berry phase in the reciprocal space), these observations suggest that the dissipative properties of anomalous Hall effect are dominated by the injection of electric charges accumulated at the edges (including electric screening), instead of the very mechanism responsible for it.

cond-mat.mes-hall↗

arXiv2025

Controlling Single-Pulse Magnetization Switching through Angular Momentum Reservoir Engineering

We report a systematic study of single pulse all optical helicity independent switching in CoGd bilayers, revealing that the magnetization reversal dynamics can be tuned over more than three orders of magnitude. By varying the Gd thickness or inserting a Pt spacer layer between Co and Gd, we control the angular momentum transferred from the rare earth sublattice to the transition metal sublattice. Our results show that when Gd is abundant and strongly coupled to Co, angular momentum is efficiently transferred during Gd demagnetization, leading to ultrafast Co reversal. In contrast, reducing the Gd thickness or introducing a Pt barrier impedes this transfer, resulting in a domain growth mediated reversal on nanosecond and possibly to microsecond timescales as previously observed in CoDy and CoHo alloys. As a result, in rare earth transition metal systems, replacing Gd with heavier rare-earth elements such as Dy or Ho slows down the switching due to a reduced angular momentum transfer towards Co upon demagnetization as demonstrated in CoGdDy alloys. Our findings establish angular momentum availability and transfer pathways as key parameters governing AO HIS dynamics, offering a unified framework for fast and slow magnetization reversal across rare earth transition metal systems.

cond-mat.mtrl-sci↗

arXiv2025

Single-laser pulse toggle switching in CoHo and CoDy single layer alloys : when domain wall motion matters

Single pulse All Optical Helicity-Independent Toggle Switching is observed in CoHo and CoDy alloys single layers. An original reversal mechanism is reported which contrasts with those observed to date. It is shown that the reversal process is on the {\mu}s timescale involving the reorganization / coalescence of domains and domain walls. The toggle switching is explained considering the unbalanced magnetization distribution stabilized after the ultrashort laser pulse.

cond-mat.mtrl-sci↗

arXiv2024

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance (TMR) ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.

cond-mat.mtrl-sci↗

arXiv2023

Electric-power efficiency of anomalous Hall current

The electric-power dissipation of the anomalous-Hall current injected into a lateral load circuit is studied. The anomalous-Hall current is generated by a $\mathrm{Co_{75}Gd_{25}}$ ferrimagnetic Hall bar and injected into lateral contacts lithographied at the two edges. The current, the voltage and the power injected in the lateral circuit are studied as a function of the magnetization state, the load resistance $R_l$, and the temperature. The power efficiency shows a sharp maximum as a function $R_l$, which corresponds to the condition of the resistance matching of the two sub-circuits. The maximum power efficiency is of the order of the square of anomalous-Hall angle. The observations are in agreement with recent predictions based on a non-equilibrium variational approach.

cond-mat.mes-hall↗

arXiv2023

Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions

Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability.

physics.app-ph↗

arXiv2022

In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer

Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a ferromagnetic layer. Only recently has AO-HIS been extended to a few other materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse AO-HIS observed in Tb/Co results from a different mechanism than the one for Gd based samples and that it can be obtained for a large range of rare earth-transition metal (RE-TM) multilayers, making this phenomenon much more general. Surprisingly, in this large family of (RE-TM) multilayer systems, the threshold fluence for switching is observed to be independent of the pulse duration, up to at least 12 ps. Moreover, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features, which are in contrast to those of AO-HIS in GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation of the magnetization, point towards an intrinsic precessional reversal mechanism. Our results allow expanding the variety of materials with tunable magnetic properties that can be integrated in complex heterostructures and provide a pathway to engineer materials for future applications based on all-optical control of magnetic order.

cond-mat.mtrl-sci↗

arXiv2022

Laser induced ultrafast Gd 4f spin dynamics in Co100-xGdx alloys by means of time-resolved XMCD

We have studied the laser induced ultrafast quenching of Gd 4f magnetic order in ferrimagnetic Co100-xGdx alloys to highlight the role of the inter-atomic exchange coupling. We have taken advantage of the ultrashort soft X-ray pulses deliver by the femtoslicing beamline at the BESSY II synchrotron radiation source at the Helmholtz-Zentrum Berlin to perform element- and time-resolved X-ray Magnetic Circular Dichroism spectroscopy.Our results show that the laser induced quenching of Gd 4f magnetic order occurs on very different time-scales for the Co72Gd28, the Co77Gd23 and the Co79Gd21 alloys. Most of the magnetic moment losses occur within the first picosecond (ps) while the electron distribution is strongly out of equilibrium. After the equilibration of the electrons and lattice temperatures (t > 1 ps), the magnetic losses occur on slower rates that depend on the alloy composition: increasing the Co composition speeds up the demagnetization of Gd 4f sublattice. The strength of the inter-atomic exchange coupling which depends on composition, determines the efficiency of the angular momentum flow from the Gd 4f spin towards the lattice. Our results are in qualitative agreements with the predictions of the microscopic three temperatures model for ferrimagnetic alloys.

cond-mat.mtrl-sci↗

arXiv2020

Laser-induced ultrafast demagnetization and perpendicular magnetic anisotropy reduction in a Co$_{88}$Tb$_{12}$ thin film with stripe domains

We use time-resolved x-ray resonant magnetic scattering (tr-XRMS) at the Co M$_{2,3}$- and Tb O$_1$-edges to study ultrafast demagnetization in an amorphous Co$_{88}$Tb$_{12}$ alloy with stripe domains. Combining the femtosecond temporal with nanometer spatial resolution of our experiment, we demonstrate that the equilibrium spin texture of the thin film remains unaltered by the optical pump-pulse on ultrashort timescales ($<$1 ps). However, after $\simeq$ 4 ps, we observe the onset of a significant domain wall broadening, which we attribute to a reduction of the uniaxial magnetic anisotropy of the system, due to energy transfer to the lattice. Static temperature dependent magnetometry measurements combined with analytical modeling of the magnetic structure of the thin film corroborate this interpretation.

cond-mat.mes-hall↗

arXiv2020

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.

cond-mat.mtrl-sci↗

arXiv2020

Electrical spectroscopy of forward volume spin waves in perpendicularly magnetized materials

We study the potential of all-electrical inductive techniques for the spectroscopy of propagating forward volume spin waves. We develop a one-dimensional model to account for the electrical signature of spin-wave reflection and transmission between inductive antennas and validate it with experiments on a perpendicularly magnetized Co/Ni multilayer. We describe the influence of the antenna geometry and antenna-to-antenna separation, as well as that of the material parameters on the lineshape of the inductive signals. For a finite damping, the broadband character of the antenna emission in the wave vector space imposes to take into account the growing decoherence of the magnetization waves upon their spatial propagation. The transmission signal can be viewed as resulting from two contributions: a first one from propagating spin-waves leading to an oscillatory phase of the broadband transmission coefficient, and another one originating from the distant induction of ferromagnetic resonance because of the long-range stray fields of realistic antennas. Depending on the relative importance of these two contributions, the decay of the transmitted signal with the propagation distance may not be exponential and the oscillatory character of the spin-wave phase upon propagation may be hidden. Our model and its experimental validation allow to define geometrical and material specifications to be met to enable the use of forward volume spin waves as efficient information carriers.

cond-mat.mes-hall↗

arXiv2019

Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces. The challenge here is to ascertain the device's effective, buried nanotransport path, and to electrically involve these nano-objects in this path by shrinking the device area from the macro- to the nano-scale while maintaining high structural/chemical quality across the heterostructure. We've developed a low-tech, resist- and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunction's magnetism through spintronic anisotropy. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy, magnetic exchange bias and magnetotransport due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layer's buried atoms and those in contact with the CoPc layer forming the so-called 'spinterface'. This provides a first insight into the experimental energetics of this promising low-power information encoding unit.

cond-mat.mes-hall↗

arXiv2019

Time-resolving magnetic scattering on rare-earth ferrimagnets with a bright soft-X-ray high-harmonic source

We demonstrate the first time-resolved X-ray resonant magnetic scattering (tr-XRMS) experiment at the N edge of Tb at 155 eV performed using a tabletop high-brightness high-harmonic generation (HHG) source. In contrast to static X-ray imaging applications, such optical-pump X-ray-probe studies pose a different set of challenges for the ultrafast driver laser because a high photon flux of X-rays resonant with the N edge must be attained at a low repetition rate to avoid thermal damage of the sample. This laboratory-scale X-ray magnetic diffractometer is enabled by directly driving HHG in helium with terawatt-level 1 um laser fields, which are obtained through pulse compression after a high-energy kHz-repetition-rate Yb:CaF2 amplifier. The high peak power of the driving fields allows us to reach the fully phase-matching conditions in helium, which yields the highest photon flux (>2x10^9 photons/s/1% bandwidth) in the 100-220 eV spectral range, to the best of our knowledge. Our proof-of-concept tr-XRMS measurements clearly resolve the spatio-temporal evolution of magnetic domains in Co/Tb ferrimagnetic alloys with femtosecond and nanometer resolution. In addition to the ultrafast demagnetization, we observe magnetic domain expansion with a domain wall velocity similar to that induced by spin transfer torque. The demonstrated method opens up new opportunities for time-space-resolved magnetic scattering with elemental specificity on various magnetic, orbital and electronic orderings in condensed matter systems.

physics.optics↗

arXiv2019

Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies

The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the '00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJ's Fermi level alters the ensuing barrier heights defined by the barrier's oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars.

cond-mat.mes-hall↗

arXiv2019

Spin-driven electrical power generation at room temperature

To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelectric materials, while quantum physics-driven processes to convert quantum information into energy have been demonstrated at very low temperatures. The magnetic state of matter, assembled by ordering the electron's quantum spin property, represents a sizeable source of built-in energy. We propose to create a direct source of electrical power at room temperature (RT) by utilizing magnetic energy to harvest thermal fluctuations on paramagnetic (PM) centers. Our spin engine rectifies current fluctuations across the PM centers' spin states according to the electron spin by utilizing so-called 'spinterfaces' with high spin polarization. As a rare experimental event, we demonstrate how this path can generate 0.1nW at room temperature across a 20 micron-wide spintronic device called the magnetic tunnel junction, assembled using commonplace Co, C and MgO materials. The presence of this path in our experiment, which also generates very high spintronic performance, is confirmed by analytical and ab-initio calculations. Device downscaling, and the ability for other materials systems than the spinterface to select a transport spin channel at RT widens opportunities for routine device reproduction. The challenging control over PM centers within the tunnel barrier's nanotransport path may be addressed using oxide- and organic-based nanojunctions. At present densities in MRAM products, this spin engine could lead to 'always-on' areal power densities well beyond that generated by solar irradiation on earth. Further developing this concept can fundamentally alter our energy-driven society's global economic, social and geopolitical constructs.

cond-mat.mes-hall↗

arXiv2019

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures

Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action.

cond-mat.mtrl-sci↗

arXiv2018

Single-shot multi-level all-optical magnetization switching mediated by spin-polarized hot electron transport

All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been shown that femto-second light pulses induce magnetization reversal in a large variety of magnetic materials. However, so far, only GdFeCo-based ferrimagnetic thin films exhibit magnetization switching via a single optical pulse. Here we demonstrate the single-pulse switching of Co/Pt multilayers within a magnetic spin-valve structure ([Co/Pt] / Cu / GdFeCo) and further show that the four possible magnetic configurations of the spin valve can be accessed using a sequence of single femto-second light pulses. Our experimental study reveals that the magnetization final state of the ferromagnetic [Co/Pt] layer is determined by spin-polarized hot electrons generated by the light pulse interactions with the GdFeCo layer. This work provides a new approach to deterministically switch ferromagnetic layers and a pathway to engineering materials for opto-magnetic multi-bit recording.

cond-mat.mtrl-sci↗

arXiv2018

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.

cond-mat.mes-hall↗