arXiv subjects

M. Horisberger

Publications and source records attributed to M. Horisberger.

9 recordsLinked to original sources

arXiv2015

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 to 100%. The structural and magnetic properties of the films were studied using X-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe-N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3at.%, nitrogen rich non-magnetic Fe-N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe-N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2at.% improves it marginally, whereas, for 3, 6 and 12at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe-N and Al-N.

cond-mat.mtrl-sci↗

arXiv2014

Depth dependence of the ionization energy of shallow hydrogen states in ZnO and CdS

The characteristics of shallow hydrogen-like muonium (Mu) states in nominally undoped ZnO and CdS (0001) crystals have been studied close to the surface at depths in the range of 10 nm - 180 nm by using low-energy muons, and in the bulk using conventional muSR. The muon implantation depths are adjusted by tuning the energy of the low-energy muons between 2.5 keV and 30 keV. We find that the bulk ionization energy of the shallow donor-like Mu state is lowered by about 10 meV at a depth of 100 nm, and continuously decreasing on approaching the surface. At a depth of about 10 nm the ionization energy is further reduced by 25-30 meV compared to its bulk value. We attribute this change to the presence of electric fields due to band bending close to the surface, and we determine the depth profile of the electric field within a simple one-dimensional model.

cond-mat.mes-hall↗

arXiv2014

Effect of dopants on thermal stability and self-diffusion in iron nitride thin films

We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron nitride thin films get significantly improved with doping. To understand the observed results, detailed Fe and N self-diffusion measurements were performed. It was observed that N self-diffusion gets suppressed with Al doping whereas Ti or Zr doping results in somewhat faster N diffusion. On the other hand Fe self-diffusion seems to get suppressed with any dopant of which heat of nitride formation is significantly smaller than that of iron nitride. Importantly, it was observed that N self-diffusion plays only a trivial role, as compared to Fe self-diffusion, in affecting the thermal stability of iron nitride thin films. Based on the obtained results effect of dopants on self-diffusion process is discussed.

cond-mat.mtrl-sci↗

arXiv2011

Observation of slow order parameter fluctuations in superconducting films using beta-detected NMR

We report beta-NMR investigations of polarized 8Li implanted in thin Pb and Ag/Nb films. At the critical superconducting temperature, we observe a singular peak in the spin relaxation rate in small longitudinal magnetic fields, which is attributed to fluctuations in the superconducting order parameter. However, the peak is more than an order of magnitude larger than the prediction based on the enhancement of the dynamic electron spin susceptibility by superconducting fluctuations and reflects the presence of unexpected slow fluctuations. Furthermore the fluctuations are rapidly suppressed in a small magnetic field, which may explain why they have not been observed previously with conventional NMR or NQR.

cond-mat.supr-con↗

arXiv2011

Formation of iron nitride thin films with Al and Ti additives

In this work we investigate the process of iron nitride (Fe-N) phase formation using 2 at.% Al or 2 at.% Ti as additives. The samples were prepared with a magnetron sputtering technique using different amount of nitrogen during the deposition process. The nitrogen partial pressure (\pn) was varied between 0-50% (rest Argon) and the targets of pure Fe, [Fe+Ti] and [Fe+Al] were sputtered. The addition of small amount of Ti or Al results in improved soft-magnetic properties when sputtered using \pn $\leq$ 10\p. When \pn is increased to 50\p non-magnetic Fe-N phases are formed. We found that iron mononitride (FeN) phases (N at% $\sim$50) are formed with Al or Ti addition at \pn =50% whereas in absence of such addition \eFeN phases (N\pat$\sim$30) are formed. It was found that the overall nitrogen content can be increased significantly with Al or Ti additions. On the basis of obtained result we propose a mechanism describing formation of Fe-N phases Al and Ti additives.

cond-mat.mtrl-sci↗

arXiv2010

Fe and N self-diffusion in non-magnetic Fe:N

Fe and N self-diffusion in non-magnetic FeN has been studied using neutron reflectivity. The isotope labelled multilayers, FeN/57Fe:N and Fe:N/Fe:15N were prepared using magnetron sputtering. It was remarkable to observe that N diffusion was slower compared to Fe while the atomic size of Fe is larger compared to N. An attempt has been made to understand the diffusion of Fe and N in non-magnetic Fe:N.

cond-mat.mtrl-sci↗

arXiv2008

Fe and N self-diffusion in amorphous FeN: A SIMS and neutron reflectivity study

Simultaneous measurement of self-diffusion of iron and nitrogen in amorphous iron nitride (Fe86N14) using secondary ion mass spectroscopy (SIMS) technique has been done. In addition neutron reflectivity (NR) technique was employed to study the Fe diffusion in the same compound. The broadening of a tracer layer of 57Fe8615N14 sandwiched between Fe86N14 layers was observed after isothermal vacuum annealing of the films at different temperatures in SIMS measurements. And a decay of the Bragg peak intensity after isothermal annealing was observed in [Fe86N14/57Fe86N14]10 multilayers in NR. Strong structural relaxation of diffusion coefficient was observed below the crystallization temperature of the amorphous phase in both measurements. It was observed from the SIMS measurements that Fe diffusion was about 2 orders of magnitude smaller compared to nitrogen at a given temperature. The NR measurements reveal that the mechanism of Fe self-diffusion is very similar to that in metal-metal type metallic glasses. The structural relaxation time for Fe and N diffusion was found comparable indicating that the obtained relaxation time essentially pertain to the structural relaxation of the amorphous phase.

cond-mat.mtrl-sci↗

arXiv2006

Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI

The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self alignment and obtaining a high mechanical strength. For the placement of the chips a manual and an automatic machine was constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatisation and is therefore much more suited for producing hundreds of modules with a well defined geometry. The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) will start in 2005.

physics.ins-det↗

arXiv2005

Observation of non-exponential magnetic penetration profiles in the Meissner state - A manifestation of non-local effects in superconductors

Implanting fully polarized low energy muons on the nanometer scale beneath the surface of a superconductor in the Meissner state enabled us to probe the evanescent magnetic field profile B(z)(0<z<=200nm measured from the surface). All the investigated samples [Nb: kappa \simeq 0.7(2), Pb: kappa \simeq 0.6(1), Ta: kappa \simeq 0.5(2)] show clear deviations from the simple exponential B(z) expected in the London limit, thus revealing the non-local response of these superconductors. From a quantitative analysis within the Pippard and BCS models the London penetration depth lambda_L is extracted. In the case of Pb also the clean limit coherence length xi0 is obtained. Furthermore we find that the temperature dependence of the magnetic penetration depth follows closely the two-fluid expectation 1/lambda^2 \propto 1-(T/T_c)^4. While B(z) for Nb and Pb are rather well described within the Pippard and BCS models, for Ta this is only true to a lesser degree. We attribute this discrepancy to the fact that the superfluid density is decreased by approaching the surface on a length scale xi0. This effect, which is not taken self-consistently into account in the mentioned models, should be more pronounced in the lowest kappa regime consistently with our findings.

cond-mat.supr-con↗