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M. J. van Setten

Publications and source records attributed to M. J. van Setten.

16 recordsLinked to original sources

Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements

We investigate the origin of negative threshold voltage shifts in back-gated amorphous IGZO TFTs under positive bias and high temperature stress. Combined DC and 1/f noise measurements reveal that the stress does not generate new dielectric traps but instead broadens the IGZO conduction band tail states. A recovery experiment confirms that the associated threshold voltage, subthreshold swing, and noise degradation are reversible. Simulations using an in-house Poisson solver confirm the experimental observations that high-temperature stress increases hydrogen doping and the density of sub-gap states.

cond-mat.mtrl-sci

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device transfer characteristics and enhances electron trapping during Positive Bias Temperature Instability (PBTI) tests. These effects are attributed to the widening of the IGZO bandgap (EG) and increased accessibility of carriers to AlOX gate oxide trap levels. As substantial residual MS is generated in 3D device processing, understanding its impact on IGZO TFTs is crucial for enabling future 3D DRAM technology.

cond-mat.mtrl-sci

In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40% In (metal ratio) suffers from degradation under forming gas anneal (FGA) and hydrogen (H) driven positive bias temperature instability (PBTI). We demonstrate scaled top-gated ALD transistors with an In-poor (In $\le$ 17%) IGZO channel that show superior resilience to hydrogen compared to the In-rich (In=40%) counterpart. The devices, fabricated with a 300-mm FAB process with dimensions down to $W_\mathrm{CH} \times L_\mathrm{TG} = 80 \times 40 \mathrm{nm}^2$, show excellent stability in 2-hour 420$^\circ$C forming gas anneal ($0.06 \le \left| ΔV_{\mathrm{TH}} \right| \le 0.33\mathrm{V}$) and improved resilience to H in PBTI at 125$^\circ$C (down to no detectable H-induced $V_{\mathrm{TH}}$ shift) compared to In-rich devices. We demonstrate that the device degradation by H in the FGA is different from the H-induced VTH instability in PBTI, namely oxygen scavenging by H and H release from a gate-dielectric into the channel, respectively, and that resilience to H in one process does not automatically translate to resilience to H in the other one. This significant improvement in IGZO resilience to H enables the use of FGA treatments during fabrication needed for silicon technology compatibility, as well as further scaling and 3D integration, bringing IGZO-based technologies closer to mass production.

cond-mat.mtrl-sci

Computing Elastic Tensors of Amorphous Materials from First-Principles

Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these thin layers are critical in determining both the operational efficacy and mechanical integrity of these devices. Unlike bulk crystalline materials, whose calculation techniques are well-established, amorphous materials present a challenge due to the significant variation in atomic topology and their non-affine transformations under external strain. This study introduces a novel method for computing the elastic tensor of amorphous materials, applicable to both bulk and ultra-thin films in the linear elastic regime using Density Functional Theory. We exemplify this method with a-SiO2, a commonly used dielectric. Our approach accounts for the structural disorder inherent in amorphous systems, which, while contributing to remarkable material properties, complicates traditional elastic tensor computation. We propose a solution involving the inability of atomic positions to relax under internal relaxation, near the boundaries of the computational unit cell, ensuring the affine transformations necessary for linear elasticity. This method's efficacy is demonstrated through its alignment with classical Young's modulus measurements, and has potential for broad application in fields such as Technology Computer Aided Design and stress analysis via Raman spectra. The revised technique for assessing the mechanical properties of amorphous materials opens new avenues for exploring their impact on device reliability and functionality.

physics.app-ph

Quasi-Particle Self-Consistent $GW$ for Molecules

We present the formalism and implementation of quasi-particle self-consistent GW (qsGW) and eigenvalue only quasi-particle self-consistent GW (evGW) adapted to standard quantum chemistry packages. Our implementation is benchmarked against high-level quantum chemistry computations (coupled-cluster theory) and experimental results using a representative set of molecules. Furthermore, we compare the qsGW approach for five molecules relevant for organic photovoltaics to self-consistent GW results (scGW) and analyze the effects of the self-consistency on the ground state density by comparing calculated dipole moments to their experimental values. We show that qsGW makes a significant improvement over conventional G0W0 and that partially self-consistent flavors (in particular evGW) can be excellent alternatives.

physics.chem-ph

Tunable localization in an s-electron Kondo system at room temperature

To achieve room-temperature superconductivity, a mechanism is needed that provides heavy quasiparticles at room temperature. In heavy fermion systems such localization is prototypically present only at liquid helium temperatures. In these $f$-electron Kondo systems, conduction electrons magnetically couple to localized moments, enhancing their mass and scatting time. These quasiparticles may form Cooper pairs and cause unconventional superconductivity with a critical temperature $T_c$ of the order of the Fermi energy $\varepsilon_F$. In relative terms, this $T_c$ is much larger than in cuprate or BCS superconductors for which $T_c\ll \varepsilon_F$. This suggests that Kondo systems in general have the potential to be high-temperature superconductors. For this to occur, strong correlations that cause electron localization need to take place at much larger temperatures. Here we show that metal hydrides manifest strong electron correlations in a single $3d_{x^2-y^2}$ band at the Fermi level, similar to the cuprates but at room temperature. Hole doping of this band, by varying the hydrogen content, causes divergence of the carrier mass and suggests the approach of an ordered Mott transition with signatures of a correlated metallic Kondo lattice. These room-temperature phenomena are expected to be widespread across hydrogen-rich compounds, and offer a promising novel ground to encounter unconventional superconductivity in the class of the metallic hydrides.

cond-mat.str-el

The PseudoDojo: Training and grading a 85 element optimized norm-conserving pseudopotential table

First-principles calculations in crystalline structures are often performed with a planewave basis set. To make the number of basis functions tractable two approximations are usually introduced: core electrons are frozen and the diverging Coulomb potential near the nucleus is replaced by a smoother expression. The norm-conserving pseudopotential was the first successful method to apply these approximations in a fully ab initio way. Later on, more efficient and more exact approaches were developed based on the ultrasoft and the projector augmented wave formalisms. These formalisms are however more complex and developing new features in these frameworks is usually more difficult than in the norm-conserving framework. Most of the existing tables of norm- conserving pseudopotentials, generated long ago, do not include the latest developments, are not systematically tested or are not designed primarily for high accuracy. In this paper, we present our PseudoDojo framework for developing and testing full tables of pseudopotentials, and demonstrate it with a new table generated with the ONCVPSP approach. The PseudoDojo is an open source project, building on the AbiPy package, for developing and systematically testing pseudopotentials. At present it contains 7 different batteries of tests executed with ABINIT, which are performed as a function of the energy cutoff. The results of these tests are then used to provide hints for the energy cutoff for actual production calculations. Our final set contains 141 pseudopotentials split into a standard and a stringent accuracy table. In total around 70.000 calculations were performed to test the pseudopotentials. The process of developing the final table led to new insights into the effects of both the core-valence partitioning and the non-linear core corrections on the stability, convergence, and transferability of norm-conserving pseudopotentials. ...

cond-mat.mtrl-sci

Automation methodologies and large-scale validation for $GW$, towards high-throughput $GW$ calculations

The search for new materials, based on computational screening, relies on methods that accurately predict, in an automatic manner, total energy, atomic-scale geometries, and other fundamental characteristics of materials. Many technologically important material properties directly stem from the electronic structure of a material, but the usual workhorse for total energies, namely density-functional theory, is plagued by fundamental shortcomings and errors from approximate exchange-correlation functionals in its prediction of the electronic structure. At variance, the $GW$ method is currently the state-of-the-art {\em ab initio} approach for accurate electronic structure. It is mostly used to perturbatively correct density-functional theory results, but is however computationally demanding and also requires expert knowledge to give accurate results. Accordingly, it is not presently used in high-throughput screening: fully automatized algorithms for setting up the calculations and determining convergence are lacking. In this work we develop such a method and, as a first application, use it to validate the accuracy of $G_0W_0$ using the PBE starting point, and the Godby-Needs plasmon pole model ($G_0W_0^\textrm{GN}$@PBE), on a set of about 80 solids. The results of the automatic convergence study utilized provides valuable insights. Indeed, we find correlations between computational parameters that can be used to further improve the automatization of $GW$ calculations. Moreover, we find that $G_0W_0^\textrm{GN}$@PBE shows a correlation between the PBE and the $G_0W_0^\textrm{GN}$@PBE gaps that is much stronger than that between $GW$ and experimental gaps. However, the $G_0W_0^\textrm{GN}$@PBE gaps still describe the experimental gaps more accurately than a linear model based on the PBE gaps.

cond-mat.mtrl-sci

First-principles investigation of the structural, dynamical and dielectric properties of kesterite, stannite and PMCA phases of Cu2ZnSnS4

Cu2ZnSnS4 (CZTS) is a promising material as an absorber in photovoltaic applications. The measured efficiency, however, is far from the theoretically predicted value for the known CZTS phases. To improve the understanding of this discrepancy we investigate the structural, dynamical, and dielectric of the three main phases of CZTS (kesterite, stannite, and PMCA) using density functional perturbation theory (DFPT). The effect of the exchange-correlation functional on the computed properties is analyzed. A qualitative agreement of the theoretical Raman spectrum with measurements is observed. However, none of the phases correspond to the experimental spectrum within the error bar that is usually to be expected for DFPT. This corroborates the need to consider cation disorder and other lattice defects extensively in this material.

cond-mat.mtrl-sci

Quantum Size Effects in the Atomistic Structure of Armchair-Nanoribbons

Quantum size effects in armchair graphene nano-ribbons (AGNR) with hydrogen termination are investigated via density functional theory (DFT) in Kohn-Sham formulation. "Selection rules" will be formulated, that allow to extract (approximately) the electronic structure of the AGNR bands starting from the four graphene dispersion sheets. In analogy with the case of carbon nanotubes, a threefold periodicity of the excitation gap with the ribbon width (N, number of carbon atoms per carbon slice) is predicted that is confirmed by ab initio results. While traditionally such a periodicity would be observed in electronic response experiments, the DFT analysis presented here shows that it can also be seen in the ribbon geometry: the length of a ribbon with L slices approaches the limiting value for a very large width 1 << N (keeping the aspect ratio small N << L) with 1/N-oscillations that display the electronic selection rules. The oscillation amplitude is so strong, that the asymptotic behavior is non-monotonous, i.e., wider ribbons exhibit a stronger elongation than more narrow ones.

cond-mat.mes-hall

First-principles study of the optical properties of MgxTi(1-x)H2

The optical and electronic properties of Mg-Ti hydrides are studied using first-principles density functional theory. Dielectric functions are calculated for MgxTi(1-x)H2 with compositions x = 0.5, 0.75, and 0.875. The structure is that of fluorite TiH2 where both Mg and Ti atoms reside at the Ti positions of the lattice. In order to assess the effect of randomness in the Mg and Ti occupations we consider both highly ordered structures, modeled with simple unit cells of minimal size, and models of random alloys. These are simulated by super cells containing up to 64 formula units (Z = 64). All compositions and structural models turn out metallic, hence the dielectric functions contain interband and intraband free electron contributions. The former are calculated in the independent particle random phase approximation. The latter are modeled based upon the intraband plasma frequencies, which are also calculated from first-principles. Only for the models of the random alloys we obtain a black state, i.e. low reflection and transmission in the energy range from 1 to 6 eV.

cond-mat.mtrl-sci

A first-principles study of the electronic structure and stability of Be(BH4)2

Alanates and boranates are studied intensively because of their potential use as hydrogen storage materials. In this paper we present a first-principles study of the electronic structure and the energetics of beryllium boranate, Be(BH4)2. From total energy calculations we show that - in contrast to the other boranates and alanates - hydrogen desorption directly to the elements is likely, and is at least competitive with desorption to the elemental hydride (BeH2). The formation enthalpy of Be(BH4)2 is only -0.12 eV/H2 (at T=0K). This low value can be rationalized by the participation of all atoms in the covalent bonding, in contrast to the ionic bonding observed in other boranates. From calculations of thermodynamic properties at finite temperature we estimate a decomposition temperature of 162 K at a pressure of 1 bar.

cond-mat.mtrl-sci

Ab initio study on the effects of transition metal doping of Mg2NiH4

Mg2NiH4 is a promising hydrogen storage material with fast (de)hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal doping by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by ~0.1 eV/H2 if one in eight Ni atoms is replaced by Cu or Fe. Replacing Ni by Co atoms, however, increases the hydrogen desorption enthalpy. We study the thermodynamic stability of the dopants in the hydrogenated and dehydrogenated phases. Doping with Co or Cu leads to marginally stable compounds, whereas doping with Fe leads to an unstable compound. The optical response of Mg2NiH4 is also substantially affected by doping. The optical gap in Mg2NiH4 is ~1.7 eV. Doping with Co, Fe or Cu leads to impurity bands that reduce the optical gap by up to 0.5 eV.

cond-mat.mtrl-sci

A model for the formation energies of alanates and boranates

We develop a simple model for the formation energies (FEs) of alkali and lkaline earth alanates and boranates, based upon ionic bonding between metal cations and (AlH4)- or (BH4)- anions. The FEs agree well with values obtained from first principles calculations and with experimental FEs. The model shows that details of the crystal structure are relatively unimportant. The small size of the (BH4)- anion causes a strong bonding in the crystal, which makes boranates more stable than alanates. Smaller alkali or alkaline earth cations do not give an increased FE. They involve a larger ionization potential that compensates for the increased crystal bonding.

cond-mat.mtrl-sci

Electronic structure and optical properties of lightweight metal hydrides

We study the electronic structures and dielectric functions of the simple hydrides LiH, NaH, MgH2 and AlH3, and the complex hydrides Li3AlH6, Na3AlH6, LiAlH4, NaAlH4 and Mg(AlH4)2, using first principles density functional theory and GW calculations. All these compounds are large gap insulators with GW single particle band gaps varying from 3.5 eV in AlH3 to 6.5 eV in the MAlH4 compounds. The valence bands are dominated by the hydrogen atoms, whereas the conduction bands have mixed contributions from the hydrogens and the metal cations. The electronic structure of the aluminium compounds is determined mainly by aluminium hydride complexes and their mutual interactions. Despite considerable differences between the band structures and the band gaps of the various compounds, their optical responses are qualitatively similar. In most of the spectra the optical absorption rises sharply above 6 eV and has a strong peak around 8 eV. The quantitative differences in the optical spectra are interpreted in terms of the structure and the electronic structure of the compounds.

cond-mat.mtrl-sci

Ab initio study of magnesium alanate, Mg(AlH4)2

Magnesium alanate Mg(AlH4)2 has recently raised interest as a potential material for hydrogen storage. We apply ab initio calculations to characterize structural, electronic and energetic properties of Mg(AlH4)2. Density functional theory calculations within the generalized gradient approximation (GGA) are used to optimize the geometry and obtain the electronic structure. The latter is also studied by quasi-particle calculations at the GW level. Mg(AlH4)2 is a large band gap insulator with a fundamental band gap of 6.5 eV. The hydrogen atoms are bonded in AlH4 complexes, whose states dominate both the valence and the conduction bands. On the basis of total energies, the formation enthalpy of Mg(AlH4)2 with respect to bulk magnesium, bulk aluminum and hydrogen gas is 0.17 eV/H2 (at T = 0). Including corrections due to the zero point vibrations of the hydrogen atoms this number decreases to 0.10 eV/H2. The enthalpy of the dehydrogenation reaction Mg(AlH4)2 -> MgH2 +2Al+3H2(g) is close to zero, which impairs the potential usefulness of magnesium alanate as a hydrogen storage material.

cond-mat.mtrl-sci