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M. K. Chattopadhyay

Publications and source records attributed to M. K. Chattopadhyay.

At least 19 recordsLinked to original sources

Improving the critical current density of the $\mathrm{V}_{0.59}\mathrm{Ti}_{0.40}\mathrm{Ce}_{0.01}$ alloy superconductor through successive cold-working and annealing at different temperatures

The critical current density ($J_c$) of V-Ti alloy superconductors is strongly influenced by the size and distribution of microstructural defects that pin magnetic flux lines. In this work, the effect of successive cold working and annealing (SCA) at 550°C on the microstructure, superconducting properties, and flux-pinning behaviour of the V$_{0.59}$Ti$_{0.40}$Ce$_{0.01}$ alloy is investigated and compared with the previously reported SCA at 450 and 650°C. During SCA at 550°C, the superconducting transition temperature increases gradually with successive processing steps. The first annealing after cold rolling to 50% thickness produces a significant enhancement in $J_c$ over the measured field range, whereas subsequent SCA cycles result in only marginal changes. The $J_c$ remains relatively weakly dependent on magnetic field over wide magnetic-field range, and the final cold-worked sample exhibits a finite $J_c$ up to 8.5 T. Pinning force density analysis shows that grain boundaries dominate flux pinning in low magnetic fields, whereas dislocations and $β$-$α'$ interfaces become the dominant pinning centres in higher fields. Comparison of the different SCA temperatures shows that 650°C provides the highest low-field $J_c$, whereas 450°C gives the best high-field performance. In contrast, SCA at 550°C provides most balanced field dependence and the largest enhancement in $J_c$ relative to the corresponding as-cast alloy. Although the highest absolute $J_c$ in the high-field regime is achieved after the third SCA cycle at 450°C, a comparable value is obtained after only the first annealing at 550°C. These results demonstrate that the intermediate annealing temperature of 550°C provides an effective balance between defect generation, phase evolution, and recovery, resulting in enhanced flux pinning over a wide magnetic-field range.

cond-mat.supr-con↗

High-Efficiency Broadband Mid-Infrared Absorption in Asymmetrically Matched Metallic Meanders: Development of Ti40V60 Alloy based LEKIDs for Mid-Far IR

Fast, highly sensitive, and broadband detectors operating in the mid-to-far-infrared (MIR-FIR) spectral region are essential for applications ranging from astrophysics to time-resolved spectroscopy using laboratory-based sources and beamlines at Infrared Free-Electron Laser (IR-FEL) facilities. Conventional Lumped Element Kinetic Inductance Detectors (LEKID) achieve high optical efficiency using resonant quarter wavelength (λ/4) backshort cavities. However, this cavity-based approach is inherently narrowband and becomes optomechanically challenging at the mid to far infrared (MIR-FIR) wavelengths. Here, we present a completely backshort-free LEKID absorber architecture that achieves broadband absorption exceeding 50%. The meander absorbers were fabricated from a superconducting Ti-V alloy and characterized using IR radiation from the IR-FEL at RRCAT, India. By illuminating through the silicon substrate and matching the meander's sheet resistance to the silicon substrate's wave impedance, the front-side reflection is strongly suppressed. Simultaneously, the sub-wavelength periodicity of the dense meander inhibits propagating transmission into free space via evanescent wave confinement. This combined mechanism drives efficient Ohmic dissipation within the metallic meander, yielding an experimental absorption efficiency ranging from 50% to 90% across the 12.5-30 micrometer wavelength range. The cavity-free design greatly simplifies the fabrication of the focal plane array while providing the broadband response required for next-generation detectors. To assess the suitability of the Ti40V60 alloy as an active superconducting detector material, a test LEKID resonator was also designed, fabricated, and experimentally characterized.

physics.ins-det↗

Terahertz Electrodynamics and Kinetic Inductance of Disordered Titanium-Vanadium Alloy Thin Films

Disordered superconductors represent an important area in modern condensed matter physics, where superconductivity survives even in the presence of strong electron scattering and localization effects. Understanding how disorder modifies the high-frequency electrodynamic response is not only important from physics point of view, but is also essential for developing next-generation quantum detectors and superconducting devices. In this work, we investigate the terahertz electrodynamics of disordered Ti40V60 alloy thin films using terahertz time-domain spectroscopy (THz-TDS) to understand the relationship between disorder, quasiparticle dynamics, and kinetic inductance. By analysing the complex conductivity, penetration depth and superfluid response, we show that structural disorder can be systematically used to tune the inductive response while maintaining a robust superconducting phase. Unlike conventional nitride superconductors that require tightly controlled reactive growth conditions, Ti40V60 alloys provide a simpler and more adaptable route for tuning the superconducting energy scales directly through the deposition conditions. These findings establish Ti40V60 alloys as a promising material for kinetic inductance detectors and provide useful insights into the electrodynamics of strongly disordered superconductors.

cond-mat.supr-con↗

Effect of Underlayer Induced Charge Carrier Substitution on the Superconductivity of Ti40V60 Alloy Thin Films

The influence of metallic and semiconducting (V, Al, and Si) under-layer induced charge carrier substitution on the superconducting properties of the Ti40V60 alloy thin films are studied and also compared with a pristine reference film without any under-layer. All the films exhibit metallic behavior in the normal state and a superconducting transition at low temperatures, where the superconducting transition temperature is tunable between 4.77 K and 5.73 K. Hall measurements on the films reveal that the under-layer strongly affects the charge carrier type and density, leading to a correlation between increasing carrier concentration and decreasing TC. The Si under-layer introduces the highest disorder, yet yields the highest TC. This indicates that in the Ti40V60 alloys, a moderate amount of disorder suppresses the spin-fluctuations (inherent to the alloy system) induced pair breaking, thereby enhancing the superconductivity. The comparable TC of the film with V under-layer and the film without under-layer, and the much smaller coherence length (~6.2 nm) as compared to the film thickness (25 nm), confirm the absence of any significant proximity effects. These findings demonstrate that under-layer engineering provides an effective route to tune the superconducting properties of Ti-V alloy thin films.

cond-mat.supr-con↗

Growth Optimization of MoSi Thin Film and Measurement of Transport Critical Current Density of its Meander Structure

Amorphous thin film superconductors are promising alternatives for the development of superconducting radiation detectors, especially superconducting nanowire single photon detectors (SNSPDs) and superconducting microwire single photon detectors (SWSPDs), due to their homogeneous nature, ease of deposition, and superconducting parameters comparable to the materials currently being used. A study on the optimization of the growth technology and superconducting transition temperature (TC) of MoSi thin films grown on SiO2 coated Si substrate is reported here. These films have been synthesized by co sputtering of Mo and Si targets with varying compositions and thicknesses to achieve optimized TC values close to that of the bulk. Mo80Si20 and Mo83Si17 compositions of the film, each with a thickness of 17 nm, exhibited the highest TC of 6.4 K and 5.9 K, respectively. Additionally, a meander structure with a 17 um wire width was patterned to estimate the transport critical current density (JC), which was measured to be 1.4E9 A per m2 at 4 K. Variation of the TC with film thickness and deposition pressure has been studied. Electrical resistance as a function of temperature of the film before and after meandering was also studied. These properties are compatible with the fabrication of superconducting nanowire, microwire and wide strip single photon detectors.

cond-mat.supr-con↗

Effect of Deposition Pressure on the Superconductivity of Ti40V60 Alloy Thin Films

The growth and characterization of high quality superconducting thin films is essential for fundamental understanding and also for the use of these films in technological applications. In the present study, Ti40V60 alloy thin films have been deposited using DC magnetron co sputtering of Ti and V at ambient temperatures. The effect of deposition pressure on the film morphology, superconducting and normal state properties has been studied. Measurement of electrical resistance as a function of temperature indicates that up to a certain deposition pressure, the 20 nm thick Ti40V60 films exhibit metallic behavior in the normal state and superconductivity at low temperatures. Beyond a threshold pressure, the films show a negative temperature coefficient of resistance with a residual resistance ratio less than one. Electrical transport measurements in the presence of magnetic field were performed to find the current voltage characteristics of the thin films. Analysis of the I V curves indicates that the Ti40V60 alloy thin films have a large transport critical current density (JC) e.g. 1.475E10 A per m2 in zero magnetic field and 2.657E09 A per m2 in 4 T (both at 4 K). Analysis of the field dependence of flux line pinning force density indicates a combined effect of core delta k surface and core delta k point pinning mechanisms (where k is the Ginzburg Landau parameter). Additionally, spatial variations in the superconducting critical temperature (TC ) across the sample contribute to delta TC pinning. In higher magnetic fields, a contribution from delta l pinning (where l is the electron mean free path) also becomes significant. The findings indicate the potential of Ti40V60 alloy thin film for superconducting device applications like cryogenic radiation detectors.

cond-mat.supr-con↗

Extending the optical absorption in a lumped element meander structure to far-infrared wavelengths

Superconducting radiation detectors typically exhibit detection and single photon sensitivity limited to the mid infrared wavelength range. Extending their detection capabilities into the far infrared range (>10 um) requires careful selection of substrate materials and detector geometries. The overall detection efficiency is linked to absorption and coupling efficiencies. In this study, the resonator geometry and absorption efficiency were estimated using electromagnetic simulations in CST Microwave Studio for a lumped-element meander structure. Simulations were performed for the 12 to 50 um wavelength range, corresponding to the Infrared Free Electron Laser (IR FEL) at RRCAT, Indore. Absorption in the meander inductor was influenced by the substrate material, thickness, and impedance matching between the detector and incident photon medium. The results indicate that SiO2 and diamond substrates are suitable for developing lumped-element kinetic inductance detectors (LEKID) in this range. Optimized meander geometries on diamond substrates demonstrated absorption efficiencies of up to 95% for narrow bandwidths and over 50% for wide bandwidths. A 30-pixel LEKID structure was fabricated using electron beam lithography on a 500 um SiO2 coated Si substrate, with a 20 nm thick Ti40V60 alloy resonator. Experimental absorption efficiency was determined through transmission and reflection measurements. Results show that in the 14 to 26 um IR-FEL range, the LEKID achieved up to 75% absorption efficiency. These studies demonstrate that the LEKID structure is ideal for detecting far infrared wavelengths above 10 um, with high absorption efficiency.

cond-mat.supr-con↗

Negative temperature coefficient of resistivity due to the itinerant spin fluctuations in metallic V$_{0.3}$Ti$_{0.7}$ alloy

Few concentrated disordered binary metallic alloys show a negative temperature coefficient of resistivity (TCR), which is quite unusual. V$_{0.3}$Ti$_{0.7}$ is one such alloy that shows resistivity exceeding 100 $μΩ$ cm and exhibits negative TCR. The addition of ferromagnetic rare-earth Gd, which is insoluble in the body-centered cubic V-Ti matrix, changes the negative TCR to positive (when Gd conc. $\geq$ 2 at.$\%$). Evidence of spin polarization of conduction electrons of the V-Ti matrix by Gd clusters is obtained from the magnetization experiments as well as from the anomalous component of the Hall effect. Our analysis suggests that the additional scattering due to the distribution in the electron-spin fluctuation interaction arising from the substitution of titanium in vanadium is the origin of the negative TCR. The Gd clusters polarize the conduction electrons, leading to the suppression of spin fluctuations, resulting in the positive TCR.

cond-mat.mtrl-sci↗

Orbital fluctuations and spin-orbital-lattice coupling in Bi2Fe4O9

Magnetic frustrations and degeneracies profoundly affect ground-state magnetic properties emerging from competing exchange interactions. Controlling such frustrations using orbital and phonon engineering via the Kugel-Khomskii-type (KK-type) interactions has recently enabled the orbital enhancement of magnetoelectric (ME) coupling. Using combined spectroscopic techniques and first-principle simulations, here we demonstrate that the magnetically frustrated Cairo lattice, Bi2Fe4O9, exhibits a strong KK-type interaction resulting in a coupled spin-orbital phase below 1.8 times the Neel temperature (TN = 245 K). We observe an order of magnitude change in phonon linewidths that is not explainable considering spin-phonon coupling channels alone. Instead, the observed change is reminiscent of orbitally active materials, which we explicitly confirm by measuring the T-dependence of low-energy orbital excitations. We further find that Bi2Fe4O9 harbors an unstable polar mode, driving the lattice to a symmetry-lowered ferroelectric (FE) phase below TN, in line with the previously reported hysteresis in polarization. Nonetheless, the FE phase leads to extremely small calculated superlattice Bragg peak intensities that are yet to be experimentally confirmed. Moreover, thermal conductivity measurements do not show any measurable effect of KK-type interactions on thermal transport across TN. But, we observe a repeatable anomaly near 57 K appearing only in the heating cycle, which co-occurs with the 400 meV broad continuum observed in Raman measurements. The observed KK-type interaction in Bi2Fe4O9 provides an opportunity for orbital enhancement of ME coupling by phonon control of superexchange interactions.

cond-mat.mtrl-sci↗

Sputtering Current Driven Growth & Transport Characteristics of Superconducting Ti40V60 Alloy Thin Films

The room temperature growth, characterization, and electrical transport properties of magnetron sputtered superconducting Ti40V60 alloy thin films are presented. The films exhibit low surface roughness and tunable transport properties. As the sputtering current increases, the superconducting transition move towards higher temperatures. Rietveld refinement of two dimensional XRD (2D XRD) pattern reveals the presence of stress in the films, which shifts from tensile to compressive as the sputtering current increases. Additionally, the crystallite size of the films increases with higher sputtering currents. The films exhibit a strong preferential orientation, contributing to their texturing. The crystallite size and texturing are found to be correlated with the superconducting transition temperature (TC) of the films. As the crystallite size and texturing increase, the TC of the films also rises.

cond-mat.supr-con↗

Ambient Temperature Growth and Superconducting Properties of Ti-V Alloy Thin Films

A study on the optimization of ambient temperature growth and superconducting properties of Ti-V alloy thin films grown on SiO2-coated Si substrate is reported here. These films have been synthesized by co-sputtering of Ti and V targets, and films having different Ti concentrations were deposited to get the optimized critical temperature (TC) of thin films close to the bulk value. The maximum TC of 5.2 K has been obtained in the Ti40V60 composition, which is further increased to 6.2 K when a 10 nm thick Ti underlayer is added below the Ti-V film. GIXRD measurements confirm the formation of Ti-V alloys in the desired crystal structure. The upper critical field (HC2) of the thin films has been estimated with the help of magnetotransport measurements. The utility of Ti-V alloy thin films in superconducting radiation detection applications is ascertained.

cond-mat.supr-con↗

Structural and Magnetic Properties of V-Ti-Si Alloy Superconductors

The structural and magnetic properties of the as-cast and annealed V$_{0.6-x}$Si$_x$Ti$_{0.4}$ ($x$ = 0, 0.05, 0.10, 0.15) alloy superconductors are reported here. It is found that addition of silicon to the V-Ti alloys results in eutectic precipitation of Ti$_{5}$Si$_3$-phase in the body centred cubic (bcc) $β$-V-Ti matrix. In the as-cast V$_{0.6-x}$Si$_x$Ti$_{0.4}$ alloys, the superconducting transition temperature (T$_{C}$) changes non-monotonically with increasing silicon content whereas after annealing, it is about 7.7 K for all the alloys. On the other hand, the upper critical field decreases and the coherence length increases after annealing in the x = 0.10 alloy. The variations in the superconducting properties in the alloys are related to the solubility of 6 at.% Si in the V$_{0.60}$Ti$_{0.40}$ alloy and the vanadium enrichment in the $β$ matrix due to the precipitation of Ti$_{5}$Si$_3$ phase.

cond-mat.supr-con↗

Temperature and terahertz frequency dependence of the dielectric properties of Fe3O4 thin films deposited on Si substrate

The Fe$_3$O$_4$/Si films are considered to be promising materials for THz spintronic applications due to their high temperature magnetic transition and semiconducting properties. In this article, we present the real part of the dielectric constant ($ε_1$) and the optical conductivity ($σ_1$) of Fe$_3$O$_4$ films of different thicknesses deposited on Si substrate (Fe$_3$O$_4$/Si) in the THz range at temperatures 2- 300 K. Although the magnetization of the films with thickness $\geq$ 115 nm shows a clear change at the Verwey transition temperature T$_v$ = 121 K, their optical properties in the THz frequency range are drastically different from each other. We have shown that $σ_1$ is maximum and $ε_1$ is minimum when the Fe$^{+2}$/Fe$^{+3}$ ratio is equal to 0.54 which is the ratio of Fe+2/Fe+3 for pure Fe$_3$O$_4$. The $σ_1$ reduces and $ε_1$ increases at all temperatures when the Fe$^{+2}$/Fe$^{+3}$ ratio deviates from 0.54. We have shown that a slight change in the Fe$^{+2}$/Fe$^{+3}$ ratio can induce large changes in the optical properties which shall have implications in the application of the Fe3O4 films in THz spintronics.

cond-mat.mtrl-sci↗

Enhancement of functional properties of V$_{0.6}$Ti$_{0.4}$ alloy superconductor by the addition of yttrium

We show here that the yttrium is immiscible and precipitates with various sizes in the body centred cubic V$_{0.6}$Ti$_{0.4}$ alloy superconductor. The number and size of the precipitates are found to depend on the amount of yttrium added. Precipitates with various sizes up to 30~$μ$m are found in the V$_{0.6}$Ti$_{0.4}$ alloy containing 5 at.\% yttrium. The large amount of line disorders generated by the addition of yttrium in this alloy are found to be effective in pinning the magnetic flux lines. While the superconducting transition temperature increases with the increasing amount of yttrium in the V$_{0.6}$Ti$_{0.4}$ alloy, the critical current density is maximum for the alloy containing 2 at. \% yttrium, where it is more than 7.5 times the parent alloy in fields higher than 1~T. We found that the effectiveness of each type of defect in pinning the flux lines is dependent on the temperature and the applied magnetic filed.

cond-mat.supr-con↗

Temperature induced first order electronic topological transition in $β$-Ag$_2$Se

$β$-Ag$_2$Se is a promising material for room temperature thermoelectric applications and magneto-resistive sensors. However, no attention was paid earlier to the hysteresis in the temperature dependence of resistivity ($ρ$($T$)). Here, we show that a broad hysteresis above 35 K is observed not only in $ρ$($T$), but also in other electronic properties such as Hall coefficient ($R_H$($T$)), Seebeck coefficient, thermal conductivity and ultraviolet photoelectron spectra (UPS). We also show that the hysteresis is not associated with a structural transition. The $ρ$($T$) and $R_H$($T$) show that $β$-Ag$_2$Se is semiconducting above 300 K, but metallicity is retained below 300 K. While electronic states are absent in the energy range from the Fermi level ($E_F$) to 0.4 eV below the $E_F$ at 300 K, a distinct Fermi edge is observed in the UPS at 15 K suggesting that the $β$-Ag$_2$Se undergoes an electronic topological transition from a high temperature semiconducting state to a low temperature metallic state. Our study reveals that a constant and moderately high thermoelectric figure of merit ($ZT$) in the range 300-395 K is observed due to the broad semiconductor to metal transition in $β$-Ag$_2$Se.

cond-mat.mtrl-sci↗

Interesting magnetic response of the nuclear fuel material UO2

Magnetic response of uranium dioxide (UO2) has been investigated through temperature and magnetic field dependent dc magnetization measurements. UO2 is a paramagnet at room temperature. The magnetic susceptibility, however, deviates from Curie-Weiss (CW) like paramagnetic behavior below T = 280 K. Further down the temperature UO2 undergoes phase transition to an antiferromagnetic state below TN = 30.6 K. The zero field cooled (ZFC) and field cooled (FC) magnetizations exhibit some distinct thermomagnetic irreversibility below TN. The temperature dependence of the FC magnetization is more like a ferromagnet, whereas ZFC magnetization exhibits distinct structures not usually observed in the antiferromagnets. In low applied magnetic field this thermomagnetic irreversibility in magnetization exists in a subtle way even in the paramagnetic regime above TN up to a fairly high temperature, but vanishes in high applied magnetic fields. Deviation from CW law and irreversibility between ZFC and FC magnetization indicate that the paramagnetic state above TN is not a trivial one. Magnetic response below TN changes significantly with the increase in the applied magnetic field. Thermomagnetic irreversibility in magnetization initially increases with the increase in the strength of applied magnetic field, but then gets reduced in the high applied fields. A subtle signature of a magnetic field induced phase transition is also observed in the isothermal magnetic field vartaion of magnetization. All these experimetal results highlight the non-trivial nature of the antiferromagnetic state in UO2

cond-mat.str-el↗

Coexisting superconductivity and ferromagnetism in the (V$_{0.60}$Ti$_{0.40}$)-Gd alloys

We present here, the effect of microstructure on the magnetic, electrical and thermal properties of (V$_{0.60}$Ti$_{0.40}$)-Gd alloys. The gadolinium is found to be immiscible and precipitates with a size $<$1.2~$μ$m in the (V$_{0.60}$Ti$_{0.40}$)-Gd alloys. These precipitates enhance the grain boundary density. The (V$_{0.60}$Ti$_{0.40}$)-Gd alloys become ferromagnetic below $T_{mc}$ = 295~K with an increase in the superconducting transition temperature ($T_{sc}$). Though the disorder increases with increasing Gd content, the electronic thermal conductivity ($κ_{e} (H = 0)$) reduces by at most 15\% which is in contrast with the 80\% decrease of the phononic thermal conductivity ($κ_{l} (H = 0)$). Our analysis suggests that the magnetic moments of Gd precipitates polarize the conduction electrons along and around the grain boundaries leading to increase in the mean free path of the electrons. The partial suppression of spin fluctuations in the (V$_{0.60}$Ti$_{0.40}$)-Gd alloy by the conduction electron polarization enhances the $T_{sc}$.

cond-mat.supr-con↗

Studies on DC transport and terahertz conductivity of granular molybdenum thin films for microwave radiation detector applications

The morphological, transport and terahertz optical properties of DC magnetron sputtered granular molybdenum thin-films with nano-grains embedded in an amorphous matrix have been studied in the normal and superconducting states. The superconducting transition temperatures of these films are much higher than that of bulk molybdenum. The optical properties of these thin-films have been studied using terahertz time-domain spectroscopy. Their properties have been compared with the existing materials used for the development of radiation detectors. The resistivity of the films lies in >100 micro-Ohm-cm range which is ideal for making highly sensitive radiation detectors. The Hall measurements indicate the presence of holes as the dominant carriers with very small mean free path and mobility. In the normal state, the films are disordered bad metal but they have large superfluid density and stiffness in their superconducting state. The normal state and superconducting properties of the films are very promising for their use in cryogenic radiation detectors for microwave, terahertz, and far IR frequency ranges.

cond-mat.supr-con↗