arXiv subjects

M. K. Hooda

Publications and source records attributed to M. K. Hooda.

12 recordsLinked to original sources

arXiv2024

Electronic Transport and Fermi Surface Topology of Zintl Phase Compound SrZn2Ge2

We report a comprehensive study on the electronic transport properties of SrZn2Ge2 single crystals. The electrical resistivity of the compound exhibits metallic behavior, following a T^2 dependence below 35 K, consistent with the Fermi liquid behavior. However, a notable deviation is observed from this behavior at lower temperatures as a pronounced resistivity plateau emerges below 10 K. This plateau is remarkably robust, and persists under the magnetic fields of up to 10 T. Both the transverse and longitudinal magnetoresistance exhibit a crossover at critical field B* from weak-field quadratic-like to high-field unsaturated linear field dependence at low temperatures (T \leq 50 K). Possible sources of linear magnetoresistance are discussed based on the Fermi surface topology, classical and quantum transport models. The Hall resistivity data establish SrZn2Ge2 as a multiband system with contributions from both the electrons and holes. The Hall coefficient is observed to decrease with increasing temperature and magnetic field, changing its sign from positive to negative. The negative Hall coefficient observed at low temperatures in high fields and at high temperatures over the entire field range suggests that the highly mobile electron charge carriers dominate the electronic transport. Our first-principles calculations show that nontrivial topological surface states exist in SrZn2Ge2 within the bulk gap along the Gamma-M path. Notably, these surface states extend from the valence to conduction band with their number varying based on the Sr and Ge termination plane. The Fermi surface of the compound exhibits a distinct tetragonal petal-like structure, with one open and several closed surfaces. Overall, these findings offer crucial insights into the mechanisms underlying the electronic transport of the compound.

cond-mat.str-el↗

arXiv2024

Electronic structure and physical properties of candidate topological material GdAgGe

We grew needle-shaped single crystals of GdAgGe, which crystallizes in a noncentrosymmetric hexagonal crystal structure with space group P$\overline{6}$2$m$ (189). The magnetic susceptibility data for $H \perp c$ reveal two pronounced antiferromagnetic transitions at $T_{N1}$ = 20 K and $T_{N2}$ = 14.5 K. The magnetic susceptibility anomalies are less prominent for $H \parallel c$. The transition at $T_{N1}$ is accompanied by a pronounced heat capacity anomaly confirming the bulk nature of the magnetic transition. Below $T_{N1}$, the electrical resistivity data follows a $T^{3/2}$ dependence. In the magnetically ordered state, GdAgGe shows positive transverse magnetoresistance, which increases with decreasing temperature and increasing field, reaching a value of $\sim$ 27% at 9 T and 10 K. The Hall resistivity data and electronic band structure calculations suggest that both the hole and electron charge carriers contribute to the transport properties. The electronic band structure displays linear band crossings near the Fermi level. The calculations reveal that GdAgGe has a nodal line with drumhead surface states coupled with a nonzero Berry phase, making it a nontrivial nodal-line semimetal.

cond-mat.str-el↗

arXiv2023

Multiple magnetic transitions, metamagnetism and large magnetoresistance in GdAuGe single crystals

We report the physical properties of GdAuGe single crystals, which were grown using Bi flux. The powder x-ray diffraction data shows that the compound crystallizes in hexagonal NdPtSb-type structure (space group P63mc). Magnetization measurements performed for field configuration H||c and H||ab show that GdAuGe orders antiferromagnetically at the Neel temperature, TN = 17.2 K. Around this temperature, heat capacity and electrical resistivity data exhibit prominent anomaly due to the antiferromagnetic (AFM) transition. In addition to an AFM phase transition, the magnetization data for H||c display the signature of field-induced metamagnetic (MM) transitions below TN. The critical field range for these transitions vary from 0.2 to 6.2 T. The critical fields for the MM transitions decrease with increasing temperature and approach zero value for temperature approaching TN. Interestingly, the magnetoresistance (MR) data (for H||c) record a sharp increase in values at the critical fields that coincide with those seen in magnetization data, tracking the presence of MM transitions. MR is positive and large (169% at 9 T and 2 K) at low temperatures. Above TN, MR becomes small and switches to negative values. Hall resistivity data reveal the predominance of hole charge carriers in the system. In addition, we observe an emergence of step-like feature in the Hall resistivity data within the field range of second MM, and a significantly large anomalous Hall conductivity of 1270 Ω-1 cm-1 at 2 K. The H-T phase diagram constructed from our detailed magnetization and magnetotransport measurements reveals multiple intricate magnetic phase transitions. The electronic and magnetic structure of GdAuGe are also thoroughly investigated using first-principles methods. The electronic band structure calculations reveal that GdAuGe is a Dirac nodal-line semimetal.

cond-mat.str-el↗

arXiv2021

Planar Hall effect in Cu intercalated PdTe$_2$

We present the Planar Hall effect studies on the Cu intercalated type-II Dirac semimetal PdTe$_{2}$. The electrical resistivity exhibits a positive field dependence both in perpendicular and parallel field directions, causing non-zero anisotropy. The longitudinal magnetoresistance shows almost linear field dependence at low temperatures. A tilted prolate spheroid shaped orbits are observed in parametric plot between transverse and longitudinal resistivities. Our study suggest that for the type-II Dirac semimetal materials with positive longitudinal magnetoresistance, the origin of Planar Hall effect cannot be asserted with certainty to the topological or non-topological without taking into account the anisotropy of Fermi surface.

cond-mat.str-el↗

arXiv2021

Anomalous charge transport of superconducting Cu$_{x}$PdTe$_2$ under high pressure

By means of high-pressure resistivity measurements on single crystals, we investigate the charge transport properties of Cu$_x$PdTe$_2$, notable for the combination of topological type-II Dirac semimetallic properties with superconductivity up to $T_c = 2.5$ K. In both cases of pristine ($x = 0$) and intercalated ($x=0.05$) samples, we find an unconventional $T^4$ power law behavior of the low-temperature resistivity visible up to $\sim$40 K and remarkably stable under pressure up to 8.2 GPa. This observation is explained by the low carrier density $n$, which strongly reduces the $k$-region available for electron-phonon scattering, as previously reported in other low-$n$ two-dimensional systems, such as multilayer graphene and semiconductor heterostructures. Our data analysis complemented by specific heat measurements and supported by previous quantum oscillation studies and \textit{ab initio} calculations suggests a scenario of one-band charge transport. Within this scenario, our analysis yields a large value of transport electron-phonon coupling constant $λ_{tr} = 1.2$ at ambient pressure that appears to be strongly enhanced by pressure assuming a constant effective mass.

cond-mat.supr-con↗

arXiv2019

Observations of zero electrical resistance of Au-Ag thin films near room temperature

Recent observations of superconducting like transition at 286 K in Ag and Ag nanostructures by Thapa et al. (arxiv: 1807.08572) have rekindled the hope for room temperature superconductivity under ambient conditions. We also investigated the electrical properties of Ag-Au nanostructure in the form of thin film grown on SiO2/Si substrate by DC sputtering and observed signature of zero resistance in the temperatures range of 243 K to 275 K. While the observed electrical resistance of samples shows intriguing and perplexing behavior under temperature cycling and external magnetic field; the large spatial inhomogeneity present in thin film hampers the reproducibility indicating the stability issues associated with superconducting like phase.

cond-mat.supr-con↗

arXiv2019

Enhanced, homogeneous type II superconductivity in Cu-intercalated PdTe$_2$

Though the superconducting phase of the type-II Dirac semimetal PdTe$_2$ was shown to be conventional in nature, the phase continued to be interesting in terms of its magnetic properties. While certain experiments indicated an unexpected type-I superconducting phase, other experiments revealed formation of vortices under the application of magnetic fields. Recently, scanning tunneling spectroscopy (STS) experiments revealed the existence of a mixed phase where type-I and type-II behaviours coexist. Here, based on our temperature and magnetic field dependent STS experiments on Cu-intercalated PdTe$_2$ we show that as the critical temperature of the superconducting phase goes up from 1.7 K to 2.4 K on Cu-intercalation, the mixed phase disappears and the system becomes homogeneously type-II. This may be attributed to an averaging effect caused by quasiparticle exchange between type-I and type-II domains mediated by the Cu atoms and to decreased coherence length due to increased disorder.

cond-mat.supr-con↗

arXiv2019

Semiconducting nature and thermal transport studies of ZrTe3

We report electrical and thermal transport properties of polycrystalline ZrTe3. The polycrystalline sample shows semiconducting behavior in contrast to the established semi-metallic character of the compound. However the charge density wave (CDW) transition remains intact and its clear signatures are observed in thermal conductivity and Seebeck coefficient, in the wide temperature range 50 - 100 K. The thermal conductivity points to additional scattering from the low frequency phonons (phonon softening) in the vicinity of CDW transition. The transport in the polycrystalline compounds is governed by smaller size polarons in the variable range hopping (VRH) region. However, the increasing disorder in polycrystalline compounds suppresses the CDW transition. The VRH behavior is also observed in the Seebeck coefficient data in the similar temperature range. The Seebeck coefficient suggests a competition between the charge carriers (electrons and hole).

cond-mat.str-el↗

arXiv2018

Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5

Recently H. Wang et al. (arXiv 1704.00995) have reported quantum oscillation in magnetoresistance with the periodicity in logarithmic of magnetic field (B) for the p-type ZrTe5. They have ascribed this type of behavior to the discrete scale invariance, resulting from Effimov bound states. We have prepared high quality stoichiometric (p-type) ZrTe5 polycrystals and observed magnetoresistance (MR) oscillations, which are periodic in B. These oscillations are in contrast to usual SdH oscillations or log B dependent oscillations as observed for tellurium deficient and stoichiometric ZrTe5 respectively. The MR follows the three dimensional Weyl semimetal like behavior, and Kohler's rule is obeyed at low temperatures. We obtained small cyclotron effective mass (m* = 0.05 m_e), very high mobility of 2.2 X 10^4 cm^2/V.s and the signature of topological protected surface states in the compound. The magnetic data shows zero cusp paramagnetic susceptibility which supports the existence of topological surface states in ZrTe5.

cond-mat.str-el↗

arXiv2017

Electronic transport properties of intermediately coupled superconductors: PdTe2 and Cu0.04PdTe2

We have investigated the electrical resistivity, Seebeck coefficient and thermal conductivity of PdTe2 and 4% Cu intercalated PdTe2 compounds. Electrical resistivity for the compounds shows Bloch-Gruneisen type linear temperature (T) dependence for 100 K < T < 480 K, and Fermi liquid behavior (~ T^2) below 50 K. Seebeck coefficient data exhibit strong competition between Normal (N) and Umklapp (U) scattering processes at low T. Though our results indicate the transfer of charge carriers to PdTe2 upon Cu intercalation, it is difficult to discern any change in the Fermi surface of the compound by Nordheim-Gorter plots. The estimated Fermi energies of the compounds are quite comparable to good metals Cu, Ag and Au. The low T, thermal conductivity (k) of the compounds is strongly dominated by the electronic contribution, and exhibits a rare linear T dependence below 10 K. However, high T, k(T) shows usual 1/T dependence, dominated by U scattering process. The electron phonon coupling parameters, estimated from the low T, specific heat data and first principle electronic structure calculations suggest that PdTe2 and Cu0.04PdTe2 are intermediately coupled superconductors.

cond-mat.str-el↗

arXiv2017

Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5

Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in temperature (T) range 2 - 340 K. Thermoelectric power (S) is positive and reaches up to 458 uV/K at 340 K on increasing T. The value of Fermi energy 16 meV, suggests low carrier density of ~ 9.5 X 10^18 cm-3. A sharp anomaly in S data is observed at 38 K, which seems intrinsic to p-type ZrTe5. The thermal conductivity value is low (2 W/m-K at T = 300 K) with major contribution from lattice part. Electrical resistivity data shows metal to semiconductor transition at T ~ 150 K and non-Arrhenius behavior in the semiconducting region. The figure of merit zT (0.026 at T = 300 K) is ~ 63% higher than HfTe5 (0.016), and better than the conventional SnTe, p-type PbTe and bipolar pristine ZrTe5 compounds.

cond-mat.mtrl-sci↗

arXiv2017

Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m* ~ 8me) in the metallic state indicate the narrow character of the 3d band. The electric conduction at low temperatures (T = 2 - 20 K) is governed by the variable range hopping of the charge carriers.

cond-mat.str-el↗