arXiv subjects

M. Karagounis

Publications and source records attributed to M. Karagounis.

7 recordsLinked to original sources

arXiv2026

Development for the Belle II vertex detector upgrade with depleted monolithic active pixel sensors

The vertex detector upgrade project for the Belle II experiment, based on CMOS depleted monolithic active pixel sensor technology, is planned to be carried out in conjunction with the major modification of the interaction region of the SuperKEKB collider during Long Shutdown 2 from 2032 to 2034. The MAPS sensor, named OBELIX currently under development, is derived from the successor to TJ-Monopix2, with modifications implemented to ensure compatibility with the Belle II trigger system. The new vertex detector consists of two layers of four self-supported consecutive OBELIX sensors, and three layers of discrete OBELIX sensors mounted on mechanical support structures with readout flex circuits attached to the sensors. The detector is arranged cylindrically around the beam pipe at radii ranging from 14 mm to 140 mm. The minimization of the material budget is required in order to enhance physics performance. We present an overview of the project and its latest developments, with particular emphasis on the development of low-material-budget flex circuits employing aluminum conductors.

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arXiv2026

Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from the signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements. This approach adds several new features to the traditional use the of the TCAD - Allpix Squared duo, among which : the integration of the pixel wells from the layout in order to precisely describe the pixel key characteristics such as leakage and punch-through currents and the coupling of Monte Carlo simulations (Allpix Squared) with high precision electrical simulations (SPICE). The first (Allpix Squared) for the precise description of the current induced at the collection electrode and the second (SPICE) to guarantee high precision simulation of the front-end electronics using realistic signal events. Irradiation is also modeled, both from the charge propagation side (charge trapping) and from the front-end response side (high input signal discharge). We have applied this methodology to the MAPS developed in the context of the Belle II vertex detector upgrade. In this contribution, we detail the key features of the exhaustive simulation flow, present the outcome of the comparison with the TJ-Monopix2 measurements and discuss the interest of the methodology for the development of modern MAPS.

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arXiv2024

An FPGA-based Data Aggregator for the New ATLAS ITK Pixel DCS

The upcoming ATLAS Phase II upgrade mandates replacing the tracking system with the all-silicon Inner Tracker (ITK), featuring a pixel detector as its core element. The monitoring data of the new system will be aggregated from an on-detector ASIC, Monitoring Of Pixel System (MOPS), and channeled to the Detector Control System (DCS) via a newly developed FPGA-based interface known as MOPS-Hub. The mitigation strategies for addressing potential Single-Event Upset (SEU) issues in the new system, along with the proton irradiation results, are presented.

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arXiv2023

Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors

In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.

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arXiv2022

System Integration of ATLAS ITK Pixel DCS ASICs

During the ATLAS phase II upgrade, the tracking system of the ATLAS experiment will be replaced by an all-silicon detector called the inner tracker (ITK) with a pixel detector as the most inner part. The monitoring data of the new system will be aggregated from an on-detector ASIC called Monitoring Of Pixel System (MOPS) and sent to the Detector Control System(DCS) using a new interface called MOPS-HUB. The hardware components of the MOPS-HUB, firmware specifications for the FPGA of MOPS-HUB and its integration plan will be presented. In addition, an irradiation plan for the new system will be introduced.

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arXiv2011

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

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arXiv2003

New Results on DEPFET Pixel Detectors for Radiation Imaging and High Energy Particle Detection

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full DEPFET pixel matrices have been built and operated for autoradiographical imaging with imaging resolutions of 4.3 +- 0.8 um at 22 keV. For applications in low energy X-ray astronomy the high energy resolution of DEPFET detectors is attractive. For particle physics, DEPFET pixels are interesting as low material detectors with high spatial resolution. For a Linear Collider detector the readout must be very fast. New readout chips have been designed and produced for the development of a DEPFET module for a pixel detector at the proposed TESLA collider (520x4000 pixels) with 50 MHz line rate and 25 kHz frame rate. The circuitry contains current memory cells and current hit scanners for fast pedestal subtraction and sparsified readout. The imaging performance of DEPFET devices as well as present achievements towards a DEPFET vertex detector for a Linear Collider are presented.

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