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M. Kataoka

Publications and source records attributed to M. Kataoka.

At least 37 records · Page 2Linked to original sources

Measurement and control of electron wave packets from a single-electron source

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.

cond-mat.mes-hall↗

Clock-controlled emission of single-electron wavepackets in a solid-state circuit

We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths.

cond-mat.mes-hall↗

Stabilization of single-electron pumps by high magnetic fields

We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.

cond-mat.mes-hall↗

Gigahertz quantized charge pumping in graphene quantum dots

Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.

cond-mat.mes-hall↗

Towards a quantum representation of the ampere using single electron pumps

Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.

cond-mat.mes-hall↗

On-demand single-electron transfer between distant quantum dots

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.

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Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current.

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Accurate high speed single-electron quantum dot preparation

Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.

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Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

A small set of final prototypes of the ATLAS Inner Detector silicon tracker (Pixel and SCT) were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignment of the silicon modules is of the order of 5 micrometers in their most precise coordinate.

physics.ins-det↗

Electron interactions in an antidot in the integer quantum Hall regime

A quantum antidot, a submicron depletion region in a two-dimensional electron system, has been actively studied in the past two decades, providing a powerful tool for understanding quantum Hall systems. In a perpendicular magnetic field, electrons form bound states around the antidot. Aharonov-Bohm resonances through such bound states have been experimentally studied, showing interesting phenomena such as Coulomb charging, h/2e oscillations, spectator modes, signatures of electron interactions in the line shape, Kondo effect, etc. None of them can be explained by a simple noninteracting electron approach. Theoretical models for the above observations have been developed recently, such as a capacitive-interaction model for explaining the h/2e oscillations and the Kondo effect, numerical prediction of a hole maximum-density-droplet antidot ground state, and spin density-functional theory for investigating the compressibility of antidot edges. In this review, we summarize such experimental and theoretical works on electron interactions in antidots.

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Energy-dependent tunnelling from few-electron dynamic quantum dots

We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected.

cond-mat.mes-hall↗

Geometric Suppression of Single-Particle Energy Spacings in Quantum Antidots

Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclear. We present a combination of experimental data and the results of new calculations concerning SP orbital states which show how the observed suppression of the energy spacing between states can be explained through a full consideration of the AD potential, without requiring any effects due to electron interactions such as the formation of compressible regions composed of multiple states, which may occur at higher magnetic fields. A full understanding of the regimes in which these effects occur is important for the design of devices to coherently manipulate electrons in edge states using AD resonances.

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Surface-acoustic-wave-driven luminescence from a lateral p-n junction

The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.

cond-mat.other↗

A numerical investigation of a piezoelectric surface acoustic wave interaction with a one-dimensional channel

We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of the underlying equations of motion, and is performed in three-dimensions fully incorporating the geometry and material composition of the substrate and gates. We demonstrate attenuation of the SAW amplitude as a result of the presence of both mechanical and electrical gates on the surface. We show that the incorporation of a simple model for the screening by the two-dimensional electron gas (2DEG), results in a total electric potential modulation that suggests a mechanism for the capture and release of electrons by the SAW. Our simulations suggest the absence of any significant turbulence in the SAW motion which could hamper the operation of SAW based quantum devices of a more complex geometry.

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Coulomb Blockade and Kondo Effect in a Quantum Hall Antidot

We propose a general capacitive model for an antidot, which has two localized edge states with different spins in the quantum Hall regime. The capacitive coupling of localized excess charges, which are generated around the antidot due to magnetic flux quantization, and their effective spin fluctuation can result in Coulomb blockade, h/(2e) Aharonov-Bohm oscillations, and the Kondo effect. The resultant conductance is in qualitative agreement with recent experimental data.

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Kondo Effect in a Quantum Antidot

We report Kondo-like behaviour in a quantum antidot (a submicron depleted region in a two-dimensional electron gas) in the quantum-Hall regime. When both spin branches of the lowest Landau level encircle the antidot in a magnetic field ($\sim 1$ T), extra resonances occur between extended edge states via antidot bound states when tunnelling is Coulomb blockaded. These resonances appear only in alternating Coulomb-blockaded regions, and become suppressed when the temperature or source-drain bias is raised. Although the exact mechanism is unknown, we believe that Kondo-like correlated tunnelling arises from skyrmion-type edge reconstruction. This observation demonstrates the generality of the Kondo phenomenon.

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Coulomb blockade of tunnelling through compressible rings formed around an antidot: an explanation for $h/2e$ Aharonov-Bohm oscillations

We consider single-electron tunnelling through antidot states using a Coulomb-blockade model, and give an explanation for h/2e Aharonov-Bohm oscillations, which are observed experimentally when the two spins of the lowest Landau level form bound states. We show that the edge channels may contain compressible regions, and using simple electrostatics, that the resonance through the outer spin states should occur twice per h/e period. An antidot may be a powerful tool for investigating quantum Hall edge states in general, and the interplay of spin and charging effects that occurs in quantum dots.

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