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M. Kaveh

Publications and source records attributed to M. Kaveh.

14 recordsLinked to original sources
arXiv2019

Irradiation-induced broadening of the Raman spectra in monolayer graphene

Broadening of the Raman scattering (RS) spectra was studied in monolayer graphene samples irradiated with various dose of ions followed by annealing of radiation damage at different temperatures. It is shown that the width Γ (full width at half maximum, FWHM) of three main RS lines (G-, D-, and 2D) increases linearly with increase of the density of irradiation-induced point defects N d as ΔΓ = m N d . The slope m of the linear dependencies is the same for one-phonon emitting G-line and D-line, and almost double for two-phonon emitting 2D-line. It is also shown that the width of D-line Γ D for all samples is larger than one half of the width of 2D-line Γ 2D , which shows that in the case of D-line, elastic electron scattering on point defects leads to an additional decreasing the lifetime of the emitted phonon. Theoretical model of the width of D-line in disordered graphene is developed which explains the experimental observations and allows to determine the numerical coefficient in the in-plane transverse optic phonon dispersion in graphene.

cond-mat.mes-hall↗
arXiv2019

Irradiation-induced metal-insulator transition in monolayer graphene

A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when the conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR. Theoretical analysis is in a good agreement with experimental data.

cond-mat.mes-hall↗
arXiv2016

Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions

The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$ ions. It is shown that the main result of ageing consists of changes in the intensity and position of D- and G- and 2D-lines in RS spectra and in an increase of the conductivity. The observed effects are explained in terms of an increase of the radius of the \textquotedblleft activated\textquotedblright{} area around structural defects.

cond-mat.mes-hall↗
arXiv2016

Effect of annealing on Raman scattering spectra of monolayer graphene samples gradually disordered by ion irradiation

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that these methods of annealing have dramatically different influence on the RS lines. Annealing in vacuum below 500$^{\circ}$C leads to significant decrease of both D-line, associated with defects, and 2D-line, associated with the intact lattice structure, which can be explained by annealing-induced enhanced doping. Further annealing in vacuum up to 1000$^{\circ}$C leads to significant increase of 2D-line together with continuous decrease of D-line, which gives evidence of partial removal of defects and recovery of the damaged lattice. Annealing in forming gas is less effective in this sense. The blue shift of all lines is observed after annealing. It is shown that below 500$^{\circ}$C, the unintentional doping is the main mechanism of shift, while at higher annealing temperatures, the lattice strain dominates due to mismatch of the thermal expansion coefficient of graphene and the SiO$_{2}$ substrate. Inhomogeneous distribution of stress and doping across the samples leads to the correlated variation of the amplitude and the peak position of RS lines.

cond-mat.mes-hall↗
arXiv2016

Replica symmetry breaking for anisotropic magnets with quenched disorder

We study critical behaviour of a magnet with cubic anisotropy and quenched scalar disorder which is taken into account by replica method. We derive to first order in $ε$ approximation the renormalization group equations taking into account possible replica symmetry breaking. We study the stability of the replica symmetric fixed points with respect to perturbations without (in general case) replica symmetry. However, we find that if a fixed point is stable with respect to replica symmetric deviations, it is also stable with respect to deviations without replica symmetry.

cond-mat.stat-mech↗
arXiv2016

Critical behaviour of anisotropic magnets with quenched disorder: replica symmetry breaking studied by operator product expansion

We study critical behaviour of disordered magnets near four dimensions. We consider the system with explicit cubic anisotropy and scalar disorder and that with random direction of anisotropy axis. The quenched disorder is taken into account by replica method. Using the method of operator product expansion, we derive in the first order to $ε$ approximation the renormalization group equations taking into account possible replica symmetry breaking.

cond-mat.stat-mech↗
arXiv2016

Transmission Resonances Anomaly in 1D Disordered Quantum Systems

Connections between the electron eigenstates and conductivity of one-dimensional disordered electron systems is studied in the framework of the tight-binding model. We show that for weak disorder only part of the states exhibit resonant transmission and contribute to the conductivity. The rest of the eigenvalues are not associated with peaks in transmission and the amplitudes of their wave functions do not exhibit a significant maxima within the sample. Moreover, unlike ordinary states, the lifetimes of these `hidden' modes either remain constant or even decrease (depending on the coupling with the leads) as the disorder becomes stronger. In a wide range of the disorder strengths, the averaged ratio of the number of transmission peaks to the total number of the eigenstates is independent of the degree of disorder and is close to the value $\sqrt{2/5}$, which was derived analytically in the weak-scattering approximation. These results are in perfect analogy to the spectral and transport properties of light in one-dimensional randomly inhomogeneous media, which provides strong grounds to believe that the existence of hidden, non-conducting modes is a general phenomenon inherent to 1D open random systems, and their fraction of the total density of states is the same for quantum particles and classical waves.

cond-mat.mes-hall↗
arXiv2015

Hopping magnetoresistance in ion irradiated monolayer graphene

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hopping resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence ($|ΔR/R|\sim B^2$) of NMR is observed, while at $B > B^*$, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of $B/B^*$. It is shown that $B^*\sim T^{1/2}$ in agreement with predictions of the "orbital" model. The obtained values of $B^*$ allowed also to estimate the localization radius $ξ$ of charge carriers for samples with different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hopping transitions via double occupied states due to alignment of electron spins.

cond-mat.mes-hall↗
arXiv2015

Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

cond-mat.mes-hall↗
arXiv2015

Raman scattering and electrical resistance of highly disordered graphene

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that highly disordered graphene film ceases to be a continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of order of reciprocal value of the minimal graphene conductivity $πh/4e^2\approx 20$ kOhm.

cond-mat.mes-hall↗
arXiv2014

Energy bands in graphene: Comparison between the tight-binding model and {\it ab initio} calculations

We compare the classification of the electron bands in graphene, obtained by group theory algebra in the framework of tight-binding model (TBM), with that calculated in the density-functional theory (DFT) framework. Identification in the DFT band-structure of all eight energy bands (four valence and four conduction bands) corresponding to the TBM-derived energy bands is performed and corresponding analysis is presented. The four occupied (three $σ$- and one $π$-like) and three unoccupied (two $σ$- and one $π$-like) bands given by DFT closely correspond to those predicted by TBM, both by their symmetry and their dispersion law. However, the two lowest lying at the $Γ$-point unoccupied bands (one of them of a $σ$-like type and the other of a $π$-like one), are not of TBM type. According both to their symmetry and to the electron density these bands are plane waves orthogonal to the TBM valence bands; dispersion of these states can be determined unambiguously up to the Brillouin zone borders. On the other hand, the fourth unoccupied band given by the TBM, can be identified among those given by the DFT band calculations; it is situated rather high with respect to energy. The interaction of this band with the free-electron states is so strong, that it exists only in a part of $k$-space.

cond-mat.mes-hall↗
arXiv1997

The Conductance in the One Dimensional Spin Polarized Gas

We present a theoretical analysis of the recent experimental results of Thomas et al on transport properties of spin polarized quantum wires. We suggest an explanation of the observed deviations of the conductance from the universal value $G=2e^2/h$ per channel in the wire. We argue that the new quasi plateau observed for the conductance at the value $G=1.4e^2/h$ is a result of the proximity between the spin polarized phase and the metallic one. The enhancement of the conductance from the value $G=e^2/h$ to $G=1.4e^2/h$ is due to the hybridization of the electronic state at $K_F^{\downarrow}\approx 0$ with the chiral states at $K_F^{\uparrow}$ and $-K_F^{\uparrow}$.

cond-mat.str-el↗
arXiv1996

Distribution Function Analysis of Mesoscopic Hopping Conductance Fluctuations

Variable-range hopping (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field.

cond-mat↗