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M. Kawamura

Publications and source records attributed to M. Kawamura.

At least 19 recordsLinked to original sources

Re-entrant superconductivity at an oxide heterointerface

A magnetic field typically suppresses superconductivity by either breaking Cooper pairs via the Zeeman effect or inducing vortex formation. However, under certain circumstances, a magnetic field can stabilize superconductivity instead. This seemingly counterintuitive phenomenon is associated with magnetic interactions and has been extensively studied in three-dimensional materials. By contrast, this phenomenon, hinting at unconventional superconductivity, remains largely unexplored in two-dimensional systems, with moir\'e-patterned graphene being the only known example. Here, we report the observation of re-entrant superconductivity (RSC) at the epitaxial (110)-oriented LaTiO3-KTaO3 interface. This phenomenon occurs across a wide range of charge carrier densities, which, unlike in three-dimensional materials, can be tuned in-situ via electrostatic gating. We attribute the re-entrant superconductivity to the interplay between a strong spin-orbit coupling and a magnetic-field driven modification of the Fermi surface. Our findings offer new insights into re-entrant superconductivity and establish a robust platform for exploring novel effects in two-dimensional superconductors.

cond-mat.supr-con

Rhenium oxyhalides: a showcase for anisotropic-triangular-lattice quantum antiferromagnets

The spin-1/2 Heisenberg antiferromagnet on an anisotropic triangular lattice (ATL) is an archetypal spin system hosting exotic quantum magnetism and dimensional crossover. However, the progress in experimental research on this field has been limited due to the scarcity of ideal model materials. Here, we show that rhenium oxyhalides $A_{3}$ReO$_{5}X_{2}$, where spin-1/2 Re$^{6+}$ ions form a layered structure of ATLs, allow for flexible chemical substitution in both cation $A^{2+}$ ($A$ = Ca, Sr, Ba, Pb) and anion $X^{-}$ ($X$ = Cl, Br) sites, leading to seven synthesizable compounds. By combining magnetic susceptibility and high-field magnetization measurements with theoretical calculations using the orthogonalized finite-temperature Lanczos method, we find that the anisotropy $J'/J$ ranges from 0.25 to 0.45 depending on the chemical composition. Our findings demonstrate that $A_{3}$ReO$_{5}X_{2}$ is an excellent platform for realizing diverse effective spin Hamiltonians that differ in the strength of the anisotropy $J'/J$ as well as the relevance of perturbation terms such as the Dzyaloshinskii-Moriya interaction and interlayer exchange coupling.

cond-mat.mtrl-sci

Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films

Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides.

cond-mat.mtrl-sci

Superconductivity at epitaxial LaTiO3-KTaO3 interfaces

Design of epitaxial interfaces is a pivotal way to engineer artificial structures where new electronic phases can emerge. Here we report a systematic emergence of interfacial superconducting state in epitaxial heterostructures of LaTiO3 and KTaO3. The superconductivity transition temperature increases with decreasing the thickness of LaTiO3. Such behavior is observed for both (110) and (111) crystal oriented structures. For thick samples, the finite resistance developing below the superconducting transition temperature increases with increasing LaTiO3 thickness. Consistent with previous reports, the (001) oriented heterointerface features high electron mobility of 250 cm2/Vs and shows no superconducting transition down to 40 mK. Our results imply a non-trivial impact of LaTiO3 on the superconducting state and indicate how superconducting KTaO3 interfaces can be integrated with other oxide materials.

cond-mat.mtrl-sci

Field-induced multiple metal-insulator crossovers of correlated Dirac electrons of perovskite CaIrO$_3$

The interplay between electron correlation and topology of relativistic electrons may lead to a new stage of the research on quantum materials and emergent functions. The emergence of various collective electronic orderings/liquids, which are tunable by external stimuli, is a remarkable feature of correlated electron systems, but has rarely been realized in the topological semimetals with high-mobility relativistic electrons. Here, we report that the correlated Dirac electrons with the Mott criticality in perovskite CaIrO$_3$ show unconventional field-induced successive metal-insulator-metal crossovers in the quantum limit accompanying a giant magnetoresistance (MR) with MR ratio of 3,500 % (18 T and 1.4 K). The analysis shows that the insulating state originates from the collective electronic ordering such as charge/spin density wave promoted by electron correlation, whereas it turns into the quasi-one-dimensional metal at higher fields due to the field-induced reduction of chemical potential, highlighting the highly field-sensitive character of correlated Dirac electrons.

cond-mat.str-el

Experimental signature of parity anomaly in semi-magnetic topological insulator

A three-dimensional topological insulator features a two-dimensional surface state consisting of a single linearly-dispersive Dirac cone. Under broken time-reversal symmetry, the single Dirac cone is predicted to cause half-integer quantization of Hall conductance, which is a manifestation of the parity anomaly in quantum field theory. However, despite various observations of quantization phenomena, the half-integer quantization has been elusive because a pair of equivalent Dirac cones on two opposing surfaces are simultaneously measured in ordinary experiments. Here we demonstrate the half-integer quantization of Hall conductance in a synthetic heterostructure termed a 'semi-magnetic' topological insulator, where only one surface state is gapped by magnetic doping and the opposite one is non-magnetic and gapless. We observe half quantized Faraday/Kerr rotations with terahertz magneto-optical spectroscopy and half quantized Hall conductance in transport at zero magnetic field. Our results suggest a condensed-matter realization of the parity anomaly and open a way for studying unconventional physics enabled by a single Dirac fermion.

cond-mat.mes-hall

Interplay of spin-orbit coupling and Coulomb interaction in ZnO-based electron system

Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density.

cond-mat.mes-hall

Molecular beam epitaxy of superconducting Sn$_{1-x}$In$_x$Te thin films

We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_\mathrm{c}$ shows a dome-shaped dependence on In content $x$ with the highest $T_\mathrm{c}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn$_{1-x}$In$_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.

cond-mat.supr-con

Anomalous Enhancement of Upper Critical Field in Sr2RuO4 Thin Films

We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of important changes of the superconducting properties, possibly accompanied with rotation of the triplet d-vector. Our findings will become a crucial step to further explore exotic properties by employing Sr2RuO4 thin films.

cond-mat.supr-con

Advanced capabilities for materials modelling with Quantum ESPRESSO

Quantum ESPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudo-potential and projector-augmented-wave approaches. Quantum ESPRESSO owes its popularity to the wide variety of properties and processes it allows to simulate, to its performance on an increasingly broad array of hardware architectures, and to a community of researchers that rely on its capabilities as a core open-source development platform to implement theirs ideas. In this paper we describe recent extensions and improvements, covering new methodologies and property calculators, improved parallelization, code modularization, and extended interoperability both within the distribution and with external software.

cond-mat.mtrl-sci

Tailoring tricolor structure of magnetic topological insulator for robust axion insulator

Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such an exotic magnetoelectric coupling and can be expected to realize the TME effect as an axion insulator. Here we designed a magnetic TI with tricolor structure where a non-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic Cr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3. Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall conductivity plateaus, which are a hallmark of the axion insulator state, in a wide range of magnetic field between the coercive fields of Cr- and V-doped layers. The resistance of the axion insulator state reaches as high as 10^9 ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon the transition from the QAH state. The tricolor structure of TI may not only be an ideal arena for the topologically distinct phenomena, but also provide magnetoresistive applications for advancing dissipationless topological electronics.

cond-mat.mes-hall

Observation of Zeeman effect in topological surface state with distinct material dependence

The helical Dirac fermions on the surface of topological insulators host novel relativistic quantum phenomena in solids. Manipulating spins of topological surface state (TSS) represents an essential step towards exploring the theoretically predicted exotic states related to time reversal symmetry (TRS) breaking via magnetism or magnetic field. Understanding Zeeman effect of TSS and determining its g-factor are pivotal for such manipulations in the latter form of TRS breaking. Here, we report those direct experimental observations in Bi2Se3 and Sb2Te2Se by spectroscopic imaging scanning tunneling microscopy. The Zeeman shifting of zero mode Landau level is identified unambiguously by judiciously excluding the extrinsic influences associated with the non-linearity in the TSS band dispersion and the spatially varying potential. The g-factors of TSS in Bi2Se3 and Sb2Te2Se are determined to be 18 and -6, respectively. This remarkable material dependence opens a new route to control the spins in the TSS.

cond-mat.mes-hall

Imaging two-component nature of Dirac-Landau levels in the topological surface state of Bi2Se3

Massless Dirac electrons in condensed matter have attracted considerable attention. Unlike conventional electrons, Dirac electrons are described in the form of two-component wave functions. In the surface state of topological insulators, these two components are associated with the spin degrees of freedom, hence governing the magnetic properties. Therefore, the observation of the two-component wave function provides a useful clue for exploring the novel spin phenomena. Here we show that the two-component nature is manifested in the Landau levels (LLs) whose degeneracy is lifted by a Coulomb potential. Using spectroscopic-imaging scanning tunneling microscopy, we visualize energy and spatial structures of LLs in a topological insulator Bi2Se3. The observed potential-induced LL splitting and internal structures of Landau orbits are distinct from those in a conventional electron system and are well reproduced by a two-component model Dirac Hamiltonian. Our model further predicts non-trivial energy-dependent spin-magnetization textures in a potential variation. This provides a way to manipulate spins in the topological surface state.

cond-mat.mes-hall

Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3

We investigate Dirac fermions on the surface of the topological insulator Bi2Se3 using scanning tunneling spectroscopy. Landau levels (LLs) are observed in the tunneling spectra in a magnetic field. In contrast to LLs of conventional electrons, a field independent LL appears at the Dirac point, which is a hallmark of Dirac fermions. A scaling analysis of LLs based on the Bohr-Sommerfeld quantization condition allowed us to determine the dispersion of the surface band. Near the Fermi energy, fine peaks mixed with LLs appear in the spectra, which may be responsible for the anomalous magneto-fingerprint effect [J. G. Checkelsky et al., Phys. Rev. Lett. 103, 246601 (2009)].

cond-mat.mes-hall

An Improved Limit on the Muon Electric Dipole Moment

Three independent searches for an electric dipole moment (EDM) of the positive and negative muons have been performed, using spin precession data from the muon g-2 storage ring at Brookhaven National Laboratory. Details on the experimental apparatus and the three analyses are presented. Since the individual results on the positive and negative muon, as well as the combined result, d=-0.1(0.9)E-19 e-cm, are all consistent with zero, we set a new muon EDM limit, |d| < 1.9E-19 e-cm (95% C.L.). This represents a factor of 5 improvement over the previous best limit on the muon EDM.

hep-ex

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

cond-mat.mes-hall

Dynamic nuclear polarization and Knight shift measurements in a breakdown regime of integer quantum Hall effect

Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin polarity flips nuclear spins through the hyperfine interaction. The polarized nuclear spins reduce the spin-splitting energy and accelerate the QHE breakdown. The Knight shift of the nuclear spins is also measured by tuning electron density during the irradiation of radio-frequency magnetic fields.

cond-mat.mes-hall

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.

cond-mat.mes-hall