arXiv subjects

M. Konecki

Publications and source records attributed to M. Konecki.

10 recordsLinked to original sources

arXiv2025

Polish national input to the 2026 update of the European Strategy for Particle Physics

The Polish high energy physics (HEP) community fully recognizes the urgent need to host at CERN a flagship project implementing a broad, long-term, and comprehensive vision of particle physics research and pursuing technological advances. Thus, we give preference and declare willingness to actively engage and participate in every aspect of the FCC project (both FCC-ee and FCC-hh), particularly accelerator development, detector construction, theoretical calculations, and physics analyses. As the e+e- Higgs Factory is the top priority for our field, the proposal to build a linear collider facility at CERN, opening up complementary physics prospects, should be considered as the second option. Polish teams declare strong support and are fully committed to contribute to the full exploitation of all aspects of the physics potential of the LHC and the HL-LHC programmes. To ensure the long-term development of particle physics, we also support the continuation of the high-field magnet research programme, as well as investigating other scenarios including, in particular, linear acceleration techniques and new acceleration technologies such as plasma acceleration, the muon collider and Gamma Factory. In addition, CERN should continue to provide support to fixed-target programmes at SPS as well as other non-collider and non-accelerator experiments at CERN. Participation in major projects conducted in and outside Europe should also be fostered. Education, communication, and outreach of particle physics are of paramount importance for the future of our field. An increased effort coordinated at the European level and resources allocated in all Member States are essential to effectively support future large-scale particle physics projects.

hep-ex↗

arXiv2007

Design and performance of the silicon sensors for the CMS barrel pixel detector

The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.

physics.ins-det↗

arXiv2006

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

physics.ins-det↗

arXiv2006

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

physics.ins-det↗

arXiv2005

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.

physics.ins-det↗

arXiv2005

Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.

physics.ins-det↗

arXiv2005

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.

physics.ins-det↗

arXiv2004

Type inversion in irradiated silicon: a half truth

Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.

physics.ins-det↗

arXiv2004

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

physics.ins-det↗

arXiv2003

Tests of silicon sensors for the CMS pixel detector

The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.

physics.ins-det↗