arXiv subjects

M. Kopčík

Publications and source records attributed to M. Kopčík.

4 recordsLinked to original sources

arXiv2021

Zeeman driven superconductor insulator transition in strongly disordered MoC film. STM and transport studies in transverse magnetic field

Superconductor insulator transition in transverse magnetic field is studied in the highly disordered MoC film with the product of the Fermi momentum and the mean free path $k_F*l$ close to unity. Surprisingly, the Zeeman paramagnetic effects dominate over orbital coupling on both sides of the transition. In superconducting state it is evidenced by a high upper critical magnetic field $B_{c2}$, by its square root dependence on temperature, as well as by the Zeeman splitting of the quasiparticle density of states (DOS) measured by scanning tunneling microscopy. At $B_{c2}$ a logarithmic anomaly in DOS is observed. This anomaly is further enhanced in increasing magnetic field, which is explained by the Zeeman splitting of the Altshuler-Aronov DOS driving the system into a more insulating or resistive state. Spin dependent Altshuler-Aronov correction is also needed to explain the transport behavior above $B_{c2}$.

cond-mat.supr-con↗

arXiv2019

Observation of quantum corrections to conductivity up to optical frequencies

It is well known that conductivity of disordered metals is suppressed in the limit of low frequencies and temperatures by quantum corrections. Although predicted by theory to exist up to much higher energies, such corrections have so far been experimentally proven only for $\lesssim$80 meV. Here, by a combination of transport and optical studies, we demonstrate that the quantum corrections are present in strongly disordered conductor MoC up to at least $\sim$4 eV, thereby extending the experimental window where such corrections were found by a factor of 50. The knowledge of both, the real and imaginary parts of conductivity, enables us to identify the microscopic parameters of the conduction electron fluid. We find that the conduction electron density of strongly disordered MoC is surprisingly high and we argue that this should be considered a generic property of metals on the verge of disorder-induced localization transition.

cond-mat.mes-hall↗

arXiv2019

Single-gap superconductivity in Mo$_8$Ga$_{41}$

In this paper, potential two-gap superconductivity in Mo$_8$Ga$_{41}$ is addressed in detail by means of thermodynamic and spectroscopic measurements. Combination of highly sensitive ac-calorimetry and scanning tunneling spectroscopy (STS), as bulk and surface sensitive probes, utilized on the same piece of crystal reveals that there is only one intrinsic gap in the system featuring strong electron-phonon coupling. Traces of multiple superconducting phases seen by STS and also in the heat capacity measured in high magnetic fields on a high-quality and seemingly single-phase crystal might mimic the multigap superconductivity of Mo$_8$Ga$_{41}$ suggested recently in several studies.

cond-mat.supr-con↗

arXiv2018

On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

Many disordered superconducting films exhibit smeared tunneling spectra with evident in-gap states. We demonstrated that the tunneling density of states in ultrathin MoC films is gapless and can be described by the Dynes version of the BCS density of states with a strong broadening parameter Gamma accounting for the suppression of coherence peaks and increased in-gap states. The thinner the film, the lower the Tc and the superconducting energy gap Delta and the larger the Gamma. MoC films of 3 nm thickness deposited simultaneously on silicon and sapphire substrates reveal very similar scalar disorder, evidenced by the equal sheet resistance, but exhibit different superconducting characteristics of Tc, Delta and Gamma, suggesting that pair breaking responsible for the dissipation channel and the suppression of superconductivity originates on the film-substrate interface. It indicates that sapphire is a stronger pair breaker. Interface pair breaking can be operative in other cases as well.

cond-mat.supr-con↗