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M. Kotur

Publications and source records attributed to M. Kotur.

8 recordsLinked to original sources

Optical cooling of nuclear spins in GaAs/(Al,Ga)As quantum wells at subkelvin temperatures: Evidence of the dynamic self-polarization of nuclear spins

We investigate the dynamic polarization of nuclear spins in a nominally undoped GaAs/Al$_{0.35}$Ga$_{0.65}$As quantum well using two complementary experimental approaches: time-resolved Kerr rotation and optical orientation measurements of photoluminescence. Using the first technique, we measure a remarkably large Overhauser field of 3.1 T in a geometry close to the Faraday configuration for a 19.7 nm wide quantum well at a temperature of 1.6 K. A nuclear spin temperature of 6.4 $\mu$K is measured at an external magnetic field of 0.006 T following an adiabatic sweep from 0.6 T. Despite the quadrupole-induced nuclear spin splitting inherent to nanostructures, the nuclear spin system is found to follow the predictions of spin temperature theory. Using the optical orientation of the photoluminescence, we investigated nuclear spin dynamics at millikelvin temperatures down to 300 mK. At a temperature of 500 mK, an Overhauser field of 160 mT is generated in an oblique but nearly Voigt magnetic field using low optical power to avoid heating. The nuclear polarization build-up time is of 150 s, consistent with earlier reports at higher temperatures, where hyperfine scattering on free photoexcited electrons governs relaxation. At 500 mK, the onset of dynamic self-polarization of nuclear spins is observed, which becomes more pronounced as the lattice temperature is further reduced to 300 mK. The estimated nuclear spin temperature in the dynamic self-polarization regime can be as low as 200 nK.

cond-mat.mes-hall

Deep optical cooling of coupled nuclear spin-spin and quadrupole reservoirs in a GaAs/(Al,Ga)As quantum well

The selective cooling of $^{75}$As spins by optical pumping followed by adiabatic demagnetization in the rotating frame is realized in a nominally undoped GaAs/(Al,Ga)As quantum well. The rotation of 6 kG strong Overhauser field at the $^{75}$As Larmor frequency of 5.5 MHz is evidenced by the dynamic Hanle effect. Despite the presence of the quadrupole induced nuclear spin splitting, it is shown that the rotating $^{75}$As magnetization is uniquely determined by the spin temperature of coupled spin-spin and quadrupole reservoirs. The dependence of heat capacity of these reservoirs on the external magnetic field direction with respect to crystal and structure axes is investigated. The lowest nuclear spin temperature achieved is 0.54 $μ$K, which is the record low value for semiconductors and semiconductor nanostructures.

cond-mat.mes-hall

Single-beam resonant spin amplification of electrons interacting with nuclei in a GaAs/(Al,Ga)As quantum well

The dynamic polarization of nuclear spins interacting with resident electrons under resonant excitation of trions is studied in a nominally undoped GaAs/(Al,Ga)As quantum well. Unlike in common time-resolved pump-probe techniques, we used a single beam approach where the excitation light is modulated between the circular and linear polarization states. The time-integrated intensity of the excitation laser reflected from the sample surface, proportional to the optical generation rate and changes due to the pumping of the resident electrons, is detected. Polarized electrons on the other hand transfer their spin to the lattice nuclei via the hyperfine interaction. Exciting the sample with a train of pulses in an external magnetic field leads to resonant spin amplification observed when the Larmor precession frequency is synchronized with the laser pulse repetition rate. Build-up of the nuclear spin polarization causes a shifting of the RSA peaks since the resulting nuclear field alters the strength of the external magnetic field experienced by the electrons. It was established that the nuclear spin polarization time $T_1$ is temperature dependent and owing to the electron localization at lower temperatures becomes shorter. "Locking" of the nuclear field manifested as the limited by the strength of the external field growth of the nuclear field, that is related to the anisotropy of the electron $g$-factor, was observed. The $g$-factor ratio between the in plane $g_{\parallel}$ and out-of-plane $g_{\bot}$ components was estimated to be $g_{\bot}/g_{\parallel}=1.3$.

cond-mat.mes-hall

Nuclear spin-lattice relaxation in p-type GaAs

Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time $T_1$ of optically pumped nuclei "in the dark", that is, in the absence of illumination. The measured $T_1$ values fall into the sub-second time range, being three orders of magnitude shorter than in earlier studied n-type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependences of $T_1$ in p-GaAs, showing no similarity to those in n-GaAs. This unexpected behavior is explained within a developed theoretical model involving quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs.

cond-mat.other

High-efficiency optical pumping of nuclear polarization in a GaAs quantum well

The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a maximum nuclear field of 0.9 T in a tilted external magnetic field of 1 T strength only. This high efficiency is due to a low leakage of spin out of the polarized nuclear system, because mechanisms of spin relaxation other than the hyperfine interaction are strongly suppressed, leading to a long nuclear relaxation time of up to 1000 s. A key ingredient to that end is the low impurity concentration inside the heterostructure, while the electrostatic potential from charged impurities in the surrounding barriers becomes screened through illumination by which the spin relaxation time is increased compared to keeping the system in the dark. This finding indicates a strategy for obtaining high nuclear spin polarization as required for long-lasting carrier spin coherence.

cond-mat.mes-hall

Nuclear spin relaxation in n-GaAs: from insulating to metallic regime

Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic field. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to drive nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to micro and nanostructures.

cond-mat.mes-hall

Nuclear spin warm-up in bulk n-GaAs

We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, that governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping can be studied and harnessed in much simpler model environment of n-GaAs bulk crystal.

cond-mat.mes-hall

Phase measurement of a Fano window resonance using tunable attosecond pulses

We study the photoionization of argon atoms close to the 3s$^2$3p$^6$ $\rightarrow$ 3s$^1$3p$^6$4p $\leftrightarrow$ 3s$^2$3p$^5$ $\varepsilon \ell$, $\ell$=s,d Fano window resonance. An interferometric technique using an attosecond pulse train, i.e. a frequency comb in the extreme ultraviolet range, and a weak infrared probe field allows us to study both amplitude and phase of the photoionization probability amplitude as a function of photon energy. A theoretical calculation of the ionization process accounting for several continuum channels and bandwidth effects reproduces well the experimental observations and shows that the phase variation of the resonant two-photon amplitude depends on the interaction between the channels involved in the autoionization process.

physics.atom-ph