arXiv subjects

M. Kruth

Publications and source records attributed to M. Kruth.

3 recordsLinked to original sources

arXiv2019

Energy-level quantization in YBa2Cu3O7-x phase-slip nanowires

Significant progress has been made in the development of superconducting quantum circuits, however new quantum devices that have longer decoherence times at higher temperatures are urgently required for quantum technologies. Superconducting nanowires with quantum phase slips are promising candidates for use in novel devices that operate on quantum principles. Here, we demonstrate ultra-thin YBa2Cu3O7-x nanowires with phase-slip dynamics and study their switching-current statistics at temperatures below 20 K. We apply theoretical models that were developed for Josephson junctions and show that our results provide strong evidence for energy-level quantization in the nanowires. The crossover temperature to the quantum regime is 12-13 K, while the lifetime in the excited state exceeds 20 ms at 5.4 K. Both values are at least one order of magnitude higher than those in conventional Josephson junctions based on low-temperature superconductors. We also show how the absorption of a single photon changes the phase-slip and quantum state of a nanowire, which is important for the development of single-photon detectors with high operating temperature and superior temporal resolution. Our findings pave the way for a new class of superconducting nanowire devices for quantum sensing and computing.

cond-mat.supr-con↗

arXiv2018

Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization

Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage techniques. Analytical methods confirm the MoS_{2} layered structure, the presence of interfacial silicon oxide (SiO_{x}) and the composition of the films. Electrical characteristics in combination with theoretical considerations quantify the concentration of electron states at the interface between Si and a 2.5 - 3 nm thick silicon oxide interlayer between Si and MoS_{2}. Measurements under electric field stress indicate the existence of mobile ions in MoS_{2} that interact with interface states. Based on time-offlight secondary ion mass spectrometry, we propose OH^{-} ions as probable candidates responsible for the observations. The dielectric constant of the vapor-phase grown MoS_{2} extracted from CV measurements at 100 KHz is in the range of 2.6 to 2.9. The present study advances the understanding of defects and interface states in MoS_{2}. It also indicates opportunities for ion-based plasticity in 2D material devices for neuromorphic computing applications.

cond-mat.mtrl-sci↗

arXiv2018

Experimental evidence for hotspot and phase-slip mechanisms of voltage switching in ultra-thin YBa2Cu3O7-x nanowires

We have fabricated ultra-thin YBa2Cu3O7-x nanowires with a high critical current density and studied their voltage switching behavior in the 4.2 - 90 K temperature range. A comparison of our experimental data with theoretical models indicates that, depending on the temperature and nanowire cross section, voltage switching originates from two different mechanisms: hotspot-assisted suppression of the edge barrier by the transport current and the appearance of phase-slip lines in the nanowire. Our observation of hotspot-assisted voltage switching is in good quantitative agreement with predictions based on the Aslamazov-Larkin model for an edge barrier in a wide superconducting bridge.

cond-mat.supr-con↗