arXiv subjects

M. M. Fogler

Publications and source records attributed to M. M. Fogler.

At least 55 records · Page 3Linked to original sources

arXiv2014

Colloquium: Graphene spectroscopy

Spectroscopic studies of electronic phenomena in graphene are reviewed. A variety of methods and techniques are surveyed, from quasiparticle spectroscopies (tunneling, photoemission) to methods probing density and current response (infrared optics, Raman) to scanning probe nanoscopy and ultrafast pump-probe experiments. Vast complimentary information derived from these investigations is shown to highlight unusual properties of Dirac quasiparticles and many-body interaction effects in the physics of graphene.

cond-mat.mes-hall↗

arXiv2014

Infrared nano-spectroscopy and imaging of collective superfluid excitations in conventional and high-temperature superconductors

We investigate near-field infrared spectroscopy and superfluid polariton imaging experiments on conventional and unconventional superconductors. Our modeling shows that near-field spectroscopy can measure the magnitude of the superconducting energy gap in Bardeen-Cooper-Schrieffer-like superconductors with nanoscale spatial resolution. We demonstrate how the same technique can measure the c-axis plasma frequency, and thus the c-axis superfluid density, of layered unconventional superconductors with a similar spatial resolution. Our modeling also shows that near-field techniques can image superfluid surface mode interference patterns near physical and electronic boundaries. We describe how these images can be used to extract the collective mode dispersion of anisotropic superconductors with sub-diffractional spatial resolution.

cond-mat.supr-con↗

arXiv2013

Electronic and plasmonic phenomena at graphene grain boundaries

Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.

cond-mat.mes-hall↗

arXiv2013

Plasmonic Hot Spots in Triangular Tapered Graphene Microcrystals

Recently, plasmons in graphene have been observed experimentally using scattering scanning near-field optical microscopy. In this paper, we develop a simplified analytical approach to describe the behavior in triangular samples. Replacing Coulomb interaction by a short-range one reduces the problem to a Helmholtz equation, amenable to analytical treatment. We demonstrate that even with our simplifications, the system still exhibits the key features seen in the experiment.

cond-mat.mes-hall↗

arXiv2012

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures.

cond-mat.mtrl-sci↗

arXiv2012

GraXe, graphene and xenon for neutrinoless double beta decay searches

We propose a new detector concept, GraXe (to be pronounced as grace), to search for neutrinoless double beta decay in Xe-136. GraXe combines a popular detection medium in rare-event searches, liquid xenon, with a new, background-free material, graphene. In our baseline design of GraXe, a sphere made of graphene-coated titanium mesh and filled with liquid xenon (LXe) enriched in the Xe-136 isotope is immersed in a large volume of natural LXe instrumented with photodetectors. Liquid xenon is an excellent scintillator, reasonably transparent to its own light. Graphene is transparent over a large frequency range, and impermeable to the xenon. Event position could be deduced from the light pattern detected in the photosensors. External backgrounds would be shielded by the buffer of natural LXe, leaving the ultra-radiopure internal volume virtually free of background. Industrial graphene can be manufactured at a competitive cost to produce the sphere. Enriching xenon in the isotope Xe-136 is easy and relatively cheap, and there is already near one ton of enriched xenon available in the world (currently being used by the EXO, KamLAND-Zen and NEXT experiments). All the cryogenic know-how is readily available from the numerous experiments using liquid xenon. An experiment using the GraXe concept appears realistic and affordable in a short time scale, and its physics potential is enormous.

physics.ins-det↗

arXiv2011

A model of large volumetric capacitance in graphene supercapacitors based on ion clustering

Electric double layer supercapacitors are promising devices for high-power energy storage based on the reversible absorption of ions into porous, conducting electrodes. Graphene is a particularly good candidate for the electrode material in supercapacitors due to its high conductivity and large surface area. In this paper we consider supercapacitor electrodes made from a stack of graphene sheets with randomly-inserted "spacer" molecules. We show that the large volumetric capacitances C > 100 F/cm^3 observed experimentally can be understood as a result of collective intercalation of ions into the graphene stack and the accompanying nonlinear screening by graphene electrons that renormalizes the charge of the ion clusters.

cond-mat.mes-hall↗

arXiv2011

Hopping transport in systems of finite thickness or length

Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the hopping resistor network are shown to depend on temperature T and the dimensionality of the system. In two and three dimensions the usual Mott law applies at high T where the correlation length of the network is smaller than the sample thickness. As T decreases, the network breaks into sparse filamentary paths, while the Mott law changes to a different T-dependence, which is derived using the percolation theory methods. In one dimension, deviations from the Mott law are known to exist at all temperatures because of rare fluctuations. The evolution of such fluctuations from highly-resistive "breaks" at high T to highly-conducting "shorts" at low T is elucidated.

cond-mat.dis-nn↗

arXiv2011

Integer Quantum Hall Effect in Trilayer Graphene

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.

cond-mat.mes-hall↗

arXiv2010

A simple variational method for calculating energy and quantum capacitance of an electron gas with screened interactions

We describe a variational procedure for calculating the energy of an electron gas in which the long-range Coulomb interaction is truncated by the screening effect of a nearby metallic gate. We use this procedure to compute the quantum capacitance of the system as a function of electron density and spin polarization. The accuracy of the method is verified against published Monte-Carlo data. The results compare favorably with a recent experiment.

cond-mat.mes-hall↗

arXiv2010

Magnetoelectric coupling, Berry phase, and Landau level dispersion in a biased bilayer graphene

We study the energy spectrum of a graphene bilayer in the presence of transverse electric and magnetic fields. We find that the resulting Landau levels exhibit a nonmonotonic dependence on the electric field, as well as numerous level crossings. This behavior is explained using quasiclassical quantization rules that properly take into account the pseudospin of the quasiparticles. The pseudospin generates the Berry phase, which leads to a shift in energy quantization and results in a pseudo-Zeeman effect. The latter depends on the electric field, alternates in sign among the two valleys, and also reduces the band gap. Analytic formulas for other pseudospin-related quantities, such as the anomalous Hall conductivity, are derived and compared with prior theoretical work.

cond-mat.mes-hall↗

arXiv2010

Apparent power-law behavior of conductance in disordered quasi-one-dimensional systems

Dependence of hopping conductance on temperature and voltage for an ensemble of modestly long one-dimensional wires is studied numerically using the shortest-path algorithm. In a wide range of parameters this dependence can be approximated by a power-law rather than the usual stretched-exponential form. Relation to recent experiments and prior analytical theory is discussed.

cond-mat.dis-nn↗

arXiv2010

Effect of external conditions on the structure of scrolled graphene edges

Characteristic dimensions of carbon nanoscrolls - "buckyrolls" - are calculated by analyzing the competition between elastic, van der Waals, and electrostatic energies for representative models of suspended and substrate-deposited graphene samples. The results are consistent with both atomistic simulations and experimental observations of scrolled graphene edges. Electrostatic control of the wrapping is shown to be practically feasible and its possible device applications are indicated.

cond-mat.mes-hall↗

arXiv2010

Screening in gated bilayer graphene via variational calculus

We analyze the response of bilayer graphene to an external transverse electric field using a variational method. A previous attempt to do so in a recent paper by Falkovsky [Phys. Rev. B 80, 113413 (2009)] is shown to be flawed. Our calculation reaffirms the original results obtained by one of us [E. McCann, Phys. Rev. B 74, 161403(R) (2006)] by a different method. Finally, we generalize these original results to describe a dual-gated bilayer graphene device.

cond-mat.mes-hall↗

arXiv2009

Neutrality point of graphene with coplanar charged impurities

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and hole puddles. Statistical properties of this density distribution as well as the charge compressibility of the system are calculated in the leading-log approximation. The conductivity depends logarithmically on $α$, the dimensionless strength of the Coulomb interaction. The theory is asymptotically exact when $α$ is small, which is the case for graphene on a substrate with a high dielectric constant.

cond-mat.mes-hall↗

arXiv2009

Numerical studies of variable-range hopping in one-dimensional systems

Hopping transport in a one-dimensional system is studied numerically. A fast algorithm is devised to find the lowest-resistance path at arbitrary electric field. Probability distribution functions of individual resistances on the path and the net resistance are calculated and fitted to compact analytic formulas. Qualitative differences between statistics of resistance fluctuations in Ohmic and non-Ohmic regimes are elucidated. The results are compared with prior theoretical and experimental work on the subject.

cond-mat.dis-nn↗

arXiv2009

Collection of indirect excitons in a diamond-shaped electrostatic trap

We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.

cond-mat.mes-hall↗

arXiv2009

Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.

cond-mat.mes-hall↗