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M. M. Qazilbash

Publications and source records attributed to M. M. Qazilbash.

29 records · Page 2Linked to original sources

Electrostatic modification of infrared response in gated structures based on VO2

We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

cond-mat.str-el↗

Electrodynamics of the vanadium oxides VO2 and V2O3

The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant changes occur in the optical conductivity of both VO2 and V2O3 across the metal-insulator transitions at least up to (and possibly beyond) 6 eV. We argue that such changes in optical conductivity and electronic spectral weight over a broad frequency range is evidence of the important role of electronic correlations to the metal-insulator transitions in both of these vanadium oxides. We observe a sharp optical transition with possible final state (exciton) effects in the insulating phase of VO2. This sharp optical transition occurs between narrow a1g bands that arise from the quasi-one-dimensional chains of vanadium dimers. Electronic correlations in the metallic phases of both VO2 and V2O3 lead to reduction of the kinetic energy of the charge carriers compared to band theory values, with paramagnetic metallic V2O3 showing evidence of stronger correlations compared to rutile metallic VO2.

cond-mat.str-el↗

Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.

cond-mat.str-el↗

Correlated metallic state of vanadium dioxide

The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic correlations, not electron-phonon interactions, govern charge dynamics in the metallic state of VO$_2$. This study focuses on the frequency and temperature dependence of the conductivity in the regime of extremely short mean free path violating the Ioffe-Regel-Mott limit of metallic transport. The standard quasiparticle picture of charge conduction is found to be untenable in metallic VO$_2$.

cond-mat.str-el↗

Evolution of Superconductivity in Electron-Doped Cuprates: Magneto-Raman Spectroscopy

The electron-doped cuprates Pr_{2-x}Ce_xCuO_4 and Nd_{2-x}Ce_xCuO_4 have been studied by electronic Raman spectroscopy across the entire region of the superconducting (SC) phase diagram. The SC pairing strength is found to be consistent with a weak-coupling regime except in the under-doped region where we observe an in-gap collective mode at 4.5 k_{B}T_c while the maximum amplitude of the SC gap is ~8 k_{B}T_{c}. In the normal state, doped carriers divide into coherent quasi-particles (QPs) and carriers that remain incoherent. The coherent QPs mainly reside in the vicinity of (π/2, π/2) regions of the Brillouin zone (BZ). We find that only coherent QPs contribute to the superfluid density in the B_{2g} channel. The persistence of SC coherence peaks in the B_{2g} channel for all dopings implies that superconductivity is mainly governed by interactions between the hole-like coherent QPs in the vicinity of (π/2, π/2) regions of the BZ. We establish that superconductivity in the electron-doped cuprates occurs primarily due to pairing and condensation of hole-like carriers. We have also studied the excitations across the SC gap by Raman spectroscopy as a function of temperature (T) and magnetic field (H) for several different cerium dopings (x). Effective upper critical field lines H*_{c2}(T, x) at which the superfluid stiffness vanishes and H^{2Δ}_{c2}(T, x) at which the SC gap amplitude is suppressed by field have been determined; H^{2Δ}_{c2}(T, x) is larger than H*_{c2}(T, x) for all doping concentrations. The difference between the two quantities suggests the presence of phase fluctuations that increase for x< 0.15. It is found that the magnetic field suppresses the magnitude of the SC gap linearly at surprisingly small fields.

cond-mat.supr-con↗

Evolution of Coherence and Superconductivity in Electron-Doped Cuprates

The electron-doped cuprates were studied by electronic Raman spectroscopy across the entire region of the superconducting (SC) phase diagram. We determined that the magnitude of the SC order parameter varies between 4.6 and 3.5 k_BT_c, consistent with weak coupling BCS theory. Using a ``Raman conductivity" sum rule, we found that doped carriers divide into coherent quasi-particles (QPs) and carriers that remain incoherent. The coherent QPs mainly reside in the vicinity of (pi/2a, pi/2a) regions of the Brillouin zone. The carriers doped beyond optimal doping remain incoherent. Only coherent QPs contribute to the superfluid density in the SC state.

cond-mat.supr-con↗

Tunneling into the normal state of Pr(2-x)CexCuO4

The temperature dependence of the tunneling conductance was measured for various doping levels of Pr(2-x)CexCuO4 using planar junctions. A normal state gap is seen at all doping levels studied, x=0.11 to x=0.19. We find it to vanish above a certain temperature T*. T* is greater than Tc for the underdoped region and it follows Tc on the overdoped side. This behavior suggests finite pairing amplitude above Tc on the underdoped side.

cond-mat.supr-con↗

Evidence for a quantum phase transition in the electron-doped cuprate Pr2-xCexCuO4+d from Hall and resistivity measurements

The doping and temperature dependence of the Hall coefficient, RH, and ab-plane resistivity in the normal state down to 350mK is reported for oriented films of the electron-doped high-Tc superconductor Pr2-xCexCuO4+d. The doping dependence of b (r=r0+AT^b) and R_sub_H (at 350 mK) suggest a quantum phase transition at a critical doping near x=0.165.

cond-mat.supr-con↗

Nernst Effect in Electron-Doped Pr$_{2-x}$Ce$_{x}$CuO$_4$

The Nernst effect of Pr$_{2-x}$Ce$_{x}$CuO$_4$ (x=0.13, 0.15, and 0.17) has been measured on thin film samples between 5-120 K and 0-14 T. In comparison to recent measurements on hole-doped cuprates that showed an anomalously large Nernst effect above the resistive T$_c$ and H$_{c2}$ \cite{xu,wang1,wang2,capan}, we find a normal Nernst effect above T$_c$ and H$_{c2}$ for all dopings. The lack of an anomalous Nernst effect in the electron-doped compounds supports the models that explain this effect in terms of amplitude and phase fluctuations in the hole-doped cuprates. In addition, the H$_{c2}$(T) determined from the Nernst effect shows a conventional behavior for all dopings. The energy gap determined from H$_{c2}$(0) decreases as the system goes from under-doping to over-dopingin agreement with the recent tunnelling experiments.

cond-mat.supr-con↗

Point contact spectroscopy of the electron-doped cuprate superconductor Pr{2-x}Ce{x}CuO4: The dependence of conductance-voltage spectra on cerium doping, barrier strength and magnetic field

We present conductance-voltage (G-V) data for point contact junctions between a normal metal and the electron doped cuprate superconductor Pr{2-x}Ce{x}CuO4 (PCCO). We observe a zero bias conductance peak (ZBCP) for the under-doped composition of this cuprate (x=0.13) which is consistent with d-wave pairing symmetry. For optimally-doped (x=0.15) and over-doped (x=0.17) PCCO, we find that the G-V characteristics indicate the presence of an order parameter without nodes. We investigate this further by obtaining point contact spectroscopy data for different barrier strengths and as a function of magnetic field.

cond-mat.supr-con↗

Evidence of a d to s-wave pairing symmetry transition in the electron-doped cuprate superconductor Pr$_{2-x}$Ce$_x$CuO$_4$

We present point contact spectroscopy (PCS) data for junctions between a normal metal and the electron doped cuprate superconductor Pr$_{2-x}$Ce$_x$CuO$_4$ (PCCO). For the underdoped compositions of this cuprate ($x \sim 0.13$) we observe a peak in the conductance-voltage characteristics of the point contact junctions. The shape and magnitude of this peak suggests the presence of Andreev bound states at the surface of underdoped PCCO which is evidence for a d-wave pairing symmetry. For overdoped PCCO ($x \sim 0.17$) the PCS data does not show any evidence of Andreev bound states at the surface suggesting an s-wave pairing symmetry.

cond-mat.supr-con↗