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M. M. Reid

Publications and source records attributed to M. M. Reid.

2 recordsLinked to original sources

Characterisation of Medipix3 Silicon Detectors in a Charged-Particle Beam

While designed primarily for X-ray imaging applications, the Medipix3 ASIC can also be used for charged-particle tracking. In this work, results from a beam test at the CERN SPS with irradiated and non-irradiated sensors are presented and shown to be in agreement with simulation, demonstrating the suitability of the Medipix3 ASIC as a tool for characterising pixel sensors.

physics.ins-det

Radiation damage in the LHCb Vertex Locator

The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately $\rm{45 \times 10^{12}\,1\,MeV}$ neutron equivalent ($\rm{1\,MeV\,n_{eq}}$). At the operational sensor temperature of approximately $-7\,^{\circ}\rm{C}$, the average rate of sensor current increase is $18\,\upmu\rm{A}$ per $\rm{fb^{-1}}$, in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of $E_{g}=1.16\pm0.03\pm0.04\,\rm{eV}$ obtained. The first observation of n-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around $15 \times 10 ^{12}$ of $1\,\rm{MeV\,n_{eq}}$. The only n-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately $\rm{3 \times 10^{12}\,1\,MeV\,n_{eq}}$, a decrease in the Effective Depletion Voltage (EDV) of around 25\,V is observed, attributed to oxygen induced removal of boron interstitial sites. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n-on-n type sensors, with rates of $(1.43\pm 0.16) \times 10 ^{-12}\,\rm{V} / \, 1 \, \rm{MeV\,n_{eq}}$ and $(1.35\pm 0.25) \times 10 ^{-12}\,\rm{V} / \, 1 \, \rm{MeV\,n_{eq}}$ measured for n-on-p and n-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.

physics.ins-det