arXiv subjects
Publications and source records attributed to M. Michel.
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We introduce a scheme to perform the cooling algorithm, first presented by Oscar Boykin et al. in 2002, for an arbitrary number of times on the same set of qbits. We achieve this goal by adding an additional SWAP-gate and a bath contact to the algorithm. This way one qbit may repeatedly be cooled without adding additional qbits to the system. By using a product Liouville space to model the bath contact we calculate the density matrix of the system after a given number of applications of the algorithm.
We show that coupled two level systems like qubits studied in quantum information can be used as a thermodynamic machine. At least three qubits or spins are necessary and arranged in a chain. The system is interfaced between two split baths and the working spin in the middle is externally driven. The machine performs Carnot-type cycles and is able to work as heat pump or engine depending on the temperature difference of the baths $ΔT$ and the energy differences in the spin system $ΔE$. It can be shown that the efficiency is a function of $ΔT$ and $ΔE$.
We show that a 3-qubit system as studied for quantum information purposes can alternatively be used as a thermodynamic machine when driven in finite time and interfaced between two split baths. The spins are arranged in a chain where the working spin in the middle exercises Carnot cycles the area of which defines the exchanged work. The cycle orientation (sign of the exchanged work) flips as the difference of bath temperatures goes through a critical value.
The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigate in detail how, for a given gate voltage, the differential conductance depends on the finite bias voltage and find a so-called self-gating effect, which we correct for. The 0.7 anomaly at zero bias is found to evolve smoothly into a conductance plateau at 0.85 (2e^2/h) at finite bias. Varying the gate voltage the transition between the 1.0 and the 0.85 (2e^2/h) plateaus occurs for definite bias voltages, which defines a gate voltage dependent energy difference $Δ$. This energy difference is compared with the activation temperature T_a extracted from the experimentally observed activated behavior of the 0.7 anomaly at low bias. We find Δ= k_B T_a which lends support to the idea that the conductance anomaly is due to transmission through two conduction channels, of which the one with its subband edge Δbelow the chemical potential becomes thermally depopulated as the temperature is increased.
The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior as reported earlier for top-gated structures. Our main result is that the zero bias, high temperature 0.7 anomaly found in activation measurements and the finite bias, low temperature 0.9 anomaly found in transport spectroscopy have the same origin: a density dependent excitation gap.