arXiv subjects

M. Morgenstern

Publications and source records attributed to M. Morgenstern.

24 records · Page 2Linked to original sources

arXiv2009

Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a doping effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as has been found for lithographically contacted flakes. Finally, we demonstrate a current induced closing of the previously found phonon gap appearing in scanning tunneling spectroscopy experiments, strongly non-linear features at higher bias probably caused by vibrations of the flake and a B-field induced double peak attributed to the 0.Landau level of graphene.

cond-mat.mes-hall↗

arXiv2009

Bistability and oscillatory motion of natural nano-membranes appearing within monolayer graphene on silicon dioxide

The recently found material graphene is a truly two-dimensional crystal and exhibits, in addition, an extreme mechanical strength. This in combination with the high electron mobility favours graphene for electromechanical investigations down to the quantum limit. Here, we show that a monolayer of graphene on SiO2 provides natural, ultra-small membranes of diameters down to 3 nm, which are caused by the intrinsic rippling of the material. Some of these nano-membranes can be switched hysteretically between two vertical positions using the electric field of the tip of a scanning tunnelling microscope (STM). They can also be forced to oscillatory motion by a low frequency ac-field. Using the mechanical constants determined previously, we estimate a high resonance frequency up to 0.4 THz. This might be favorable for quantum-electromechanics and is prospective for single atom mass spectrometers.

cond-mat.mes-hall↗

arXiv2008

Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2

Using scanning tunneling microscopy (STM) in ultra high vacuum and atomic force microscopy, we investigate the corrugation of graphene flakes deposited by exfoliation on a Si/SiO2 (300 nm) surface. While the corrugation on SiO2 is long-range with a correlation length of about 25 nm, some of the graphene monolayers exhibit an additional corrugation with a preferential wave length of about 15 nm. A detailed analysis shows that the long range corrugation of the substrate is also visible on graphene, but with a reduced amplitude, leading to the conclusion that the graphene is partly freely suspended between hills of the substrate. Thus, the intrinsic rippling observed previously on artificially suspended graphene can exist as well, if graphene is deposited on SiO2.

cond-mat.mtrl-sci↗

arXiv2008

The Quantum Hall Transition in Real Space: From Localized to Extended States

Using scanning tunneling spectroscopy in ultra-high vacuum at low temperature (T = 0.3 K) and high magnetic fields (B < 12 T), we directly probe electronic wave functions across an integer quantum Hall transition. In accordance with theoretical predictions, we observe the evolution from localized drift states in the insulating phases to branched extended drift states at the quantum critical point. The observed microscopic behavior close to the extended state indicates points of localized quantum tunneling, which are considered to be decisive for a quantitative description of the transition.

cond-mat.mes-hall↗

arXiv2002

Comparing measured and calculated local density of states in a disordered two-dimensional electron system

The local density of states (LDOS) of the adsorbate induced two-dimensional electron system (2DES) on n-InAs(110) is studied by low-temperature scanning tunneling spectroscopy. In contrast to a similar 3DES, the 2DES LDOS exhibits 20 times stronger corrugations and rather irregular structures. Both results are interpreted as a consequence of weak localization. Fourier transforms of the LDOS reveal that the k-values of the unperturbed 2DES still dominate the 2DES, but additional lower k-values contribute significantly. To clarify the origin of the LDOS patterns, we measure the potential landscape of the same 2DES area allowing to calculate the expected LDOS from the single particle Schr"odinger equation and to directly compare it with the measured one.

cond-mat.dis-nn↗

arXiv2002

Direct comparison between potential landscape and local density of states in a disordered two-dimensional electron system

The local density of states (LDOS) of the adsorbate induced two-dimensional electron system (2DES) on n-InAs(110) is studied by low-temperature scanning tunneling spectroscopy. The LDOS exhibits irregular structures with fluctuation lengths decreasing with increasing energy. Fourier transformation reveals that the k-values of the unperturbed 2DES dominate the LDOS, but additional lower k-values contribute significantly. To clarify the origin of the additional k-space intensity, we measure the potential landscape of the same 2DES area with the help of the tip induced quantum dot. This allows to calculate the expected LDOS from the single particle Schroedinger equation and to directly compare it with the measured one. Reasonable correspondance between calculated and measured LDOS is found.

cond-mat.mes-hall↗