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M. Nurmamat

Publications and source records attributed to M. Nurmamat.

3 recordsLinked to original sources

Realization of a parity-violating antiferromagnetic state in LaMnSi

Spontaneous symmetry breaking underlies functional electronic phenomena in quantum materials. Breaking space-inversion ($\mathcal{P}$) or time-reversal ($\mathcal{T}$) symmetry can generate spin-split electronic bands central to modern spintronics. By contrast, parity-violating antiferromagnetic (AFM) order breaks both $\mathcal{P}$ and $\mathcal{T}$ while preserving the combined $\mathcal{PT}$ symmetry, enabling spin-degenerate yet momentum-asymmetric electronic bands. This momentum asymmetry has been proposed as a microscopic origin of unconventional nonreciprocal and nonlinear responses but its experimental verification has remained challenging because it requires establishing both the symmetry-breaking magnetic order and the associated electronic structure. Here we combine soft x-ray angle-resolved photoemission spectroscopy (ARPES) and polarization-resolved optical second-harmonic generation (SHG) microscopy to study LaMnSi, a candidate parity-violating AFM metal. Soft x-ray ARPES resolves the three-dimensional bulk band structures in agreement with density functional theory calculations for the AFM phase, whereas SHG microscopy detects sign-reversing nonlinear optical responses from opposite AFM domains that carry $\mathcal{T}$-odd parity-violating order. Together, these results provide direct evidence for parity-violating AFM state in LaMnSi, establish LaMnSi as a parity-violating AFM metal, and identify this class of AFMs as a promising platform for symmetry-controlled nonreciprocal and nonlinear electronic responses.

cond-mat.mtrl-sci

Zone-selection effect of photoelectron intensity distributions in a nonsymmorphic system RAlSi (R : Ce and Nd)

We investigate the electronic structures of noncentrosymmetric Weyl semimetals RAlSi (R: Ce and Nd) using soft x-ray angle-resolved photoemission spectroscopy. We find that the photoelectron intensity distribution observed in the momentum-resolved electronic bands is highly sensitive to the covered Brillouin zone (BZ) due to the zone-selection effect arising from the nonsymmorphic crystal structure of RAlSi. Our data reconstruct the photoelectron distributions varied according to the zone-selection effect, and reveal comprehensive information about the electronic band structures reproduced by band calculations. This detailed information enables us to experimentally trace the Weyl-cone dispersion throughout three-dimensional momentum space, providing valuable insights into the unique properties of RAlSi.

cond-mat.str-el

Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.

cond-mat.mtrl-sci