arXiv subjects

M. P. López-Sancho

Publications and source records attributed to M. P. López-Sancho.

9 recordsLinked to original sources

arXiv2017

Charged Topological Solitons in Zigzag Graphene Nanoribbons

Graphene nanoribbons with zigzag terminated edges have a magnetic ground state characterized by edge ferromagnetism and antiferromagnetic inter edge coupling. This broken symmetry state is degenerate in the spin orientation and we show that, associated with this degeneracy, the system has topological solitons. The solitons appear at the interface between degenerate ground states. These solitons are the relevant charge excitations in the system. When charge is added to the nanoribbon, the system energetically prefers to create magnetic domains and accommodate the extra electrons in the interface solitons rather than setting them in the conduction band.

cond-mat.mes-hall↗

arXiv2014

Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides

One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs, including explicitly the role of the chalcogen orbitals and their hybridization with the transition metal atoms. To this aim, we combine density functional theory (DFT) calculations with a Slater-Koster tight-binding model. Whereas most of the previous tight-binding models have been restricted to the K and K' points of the Brillouin zone (BZ), here we consider the effect of SOC in the whole BZ, and the results are compared to the band structure obtained by DFT methods. The tight-binding model is used to analyze the effect of SOC in the band structure, considering separately the contributions from the transition metal and the chalcogen atoms. Finally, we present a scenario where, in the case of strong SOC, the spin/orbital/valley entanglement at the minimum of the conduction band at Q can be probed and be of experimental interest in the most common cases of electron-doping reported for this family of compounds.

cond-mat.mes-hall↗

arXiv2014

Electronic properties of single-layer and multilayer transition metal dichalcogenides $MX_2$ ($M=$ Mo, W and $X=$ S, Se)

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, we discuss the band structure of single-layer, bilayer and bulk compounds. The band structure of these compounds is highly sensitive to elastic deformations, and we review how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. We further discuss the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of $MX_2$. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, we include a discussion on the excitonic effects which are present in these systems.

cond-mat.mtrl-sci↗

arXiv2013

Interplay between symmetry and spin-orbit coupling in graphene nanoribbons

We study the electronic structure of chiral and achiral graphene nanoribbons with symmetric edges, including curvature and spin-orbit effects. Curved ribbons show spin-split bands, whereas flat ribbons present spin-degenerate bands. We show that this effect is due to the breaking of spatial inversion symmetry in curved graphene nanoribbons, while flat ribbons with symmetric edges possess an inversion center, regardless of their having chiral or achiral edges. We find an enhanced edge-edge coupling and a substantial gap in narrow chiral nanoribbons, which is not present in zigzag ribbons of similar width. We attribute these size effects to the mixing of the sublattices imposed by the edge geometry, yielding a distinct behavior of chiral ribbons from those with pure zigzag edges.

cond-mat.mes-hall↗

arXiv2010

Intrinsic spin-orbit interactions in flat and curved graphene nanoribbons

Recent theoretical and experimental works on carbon nanotubes and graphene samples have revealed that spin-orbit interactions, though customarily ignored in carbon-based materials, are more important and complex than it was thought. We study the intrinsic spin-orbit coupling effects on graphene nanoribbons, both flat and bent. Calculations are performed within the tight-binding model with the inclusion of a four-orbital basis set. Thereby the full symmetry of the honeycomb lattice and the hybridization of $σ$ and $π$ bands are considered. In addition to the zero-energy $π$-edge states, $σ$-derived edge states are found for the three investigated ribbon geometries. The $σ$ states are also spin-filtered and localized at the boundaries of the ribbons. The calculated spin-orbit splittings are larger for the $σ$- than for the $π$-derived edge states. Due to this enhancement, spin-orbit splittings of the $σ$-states reach values of the order of a few Kelvin. These spin-filtered edge states are robust under $σ-π$ hybridization and curvature effects.

cond-mat.mtrl-sci↗

arXiv2004

Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime

We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon coupled modes in Raman spectra.

cond-mat.mtrl-sci↗

arXiv2003

Temperature Dependence of the Dielectric Constant and Resistivity of Diluted Magnetic Semiconductors

We study the effect that the ferromagnetic order has on the electrical properties of Diluted Magnetic Semiconductors. We analyze the temperature dependence of the dielectric constant and of the resistivity of Ga$_{1-x}$Mn$_x$As. In our treatment the electronic structure of the semiconductor is described by a six band Kohn-Luttinger Hamiltonian, the thermal fluctuations of the Mn magnetic moments are treated in the mean field approximation, the carrier-carrier interaction within the random phase approximation, and the transport properties using the relaxation time approximation. We find that the Thomas-Fermi length changes near 8% when going from the ferromagnetic to the paramagnetic phase. We also find, in good agreement with the experiments, that the resistivity changes near 20% when going from zero to the Curie temperature. We explain this change in the resistivity in terms of the variation of the Fermi surface and the transport scattering time when going from the ferromagnetic phase to the paramagnetic phase.

cond-mat.mtrl-sci↗

arXiv2002

Electromodulation of the Magnetoresistance in Diluted Magnetic Semiconductors Based Heterostructures

We study the properties of heterostructures formed by two layers of diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscilles between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistance of the heterostructure by applying an electric field. Our results indicate that in a single gated sample the magnetoresistance could be modulated by with an electrical bias voltage.

cond-mat.mtrl-sci↗

arXiv1995

Momentum dependence of the spin and charge excitations in the two dimensional Hubbard model

The low energy spin and charge excitations in the 2D Hubbard model near half filling are analyzed. The RPA spectra derived from inhomoheneous mean field textures are analyzed. Spin excitations show a commensurate peak at half filling, incommensurate peaks near half filling, and a broad background typical of a dilute Fermi liquid away from half filling. Charge excitations, near half filling, are localized near (0,0), and they occupy a small portion of the Brillouin Zone, in a way consistent with the existence of a small density of carriers, and a small Fermi surface. At higher hole densities, they fill the entire BZ, and can be understood in terms of a conventional Fermi liquid picture. The results are consistent with the observed features of the high-T$_c$ superconductors.

cond-mat↗