arXiv subjects
Publications and source records attributed to M. P. Telenkov.
Electron-electron scattering processes in a quantum well in a quantizing magnetic field are considered. A matrix of electron-electron scattering rates containing all types of transitions between Landau levels within a single subband is calculated. This matrix is analyzed, and the relative magnitude of transition rates of different types is determined.
Electron-electron scattering processes involving Landau levels of two subband are considered. A matrix of electron-electron scattering rates containing all tipes of transitions between Landau levels is calculated/ This matrix is analized, and the relative rates of transitions of different types are determined. The effect of the quantizing magnetic field orientation on electron-electron scattering processes is ectablished.
Electron scattering by longitudinal acoustic phonons in a quantizing magnetic field is considered. Expressions for the scattering rate in a magnetic field tilted to the quantum well layers are derived. By analyzing these expressions, trends in the behavior of the scattering rate are established with changes in the magnetic field strength and orientation, as well as the potential profile of the quantum well.
Scattering processes by the interface roughness in a quantum well in a quantizing magnetic field are considered. An expression for the scattering rate is derived for a magnetic field tilted relative to the quantum well layers. By analyzing this expression, trends in the behavior of the scattering rate are established with variation in the magnetic field strength and orientation, the potential profile of the quantum well, and the interface roughness parameters.
The electron scattering with longitudinal polar optical phonons in a quantizing magnetic field tilted to the plane of quantum well layers is studied. The scattering rate's behavior at variation of the magnetic field magnitude and orientation is established.
The possibility of controlling the tunneling time between quantum wells by relocation of the subband wave function within the quantum well by varying the configuration of thin tunnel-transparent barriers embedded into the well is demonstrated.