arXiv subjects

M. Pepper

Publications and source records attributed to M. Pepper.

At least 55 records · Page 3Linked to original sources

arXiv2008

Low Temperature Transport in Undoped Mesoscopic Structures

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

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arXiv2008

Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures

We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $μ_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $μ_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation.

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arXiv2008

Patterned backgating using single-sided mask aligners: application to density-matched electron-hole bilayers

We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust method of contacting both sides of a sample using an ultrasonic bonder is described. In addition we present a mathematical model to analyse the variation of the electrochemical potential through the doped layers and heterojunctions that are normally present in most GaAs based devices. We utilise the technique and the estimates from our model to fabricate an electron-hole bilayer device in which each layer is separately contacted and has tunable densities. The electron and hole layers are separated by barriers either 25 or 15nm wide. In both cases, the densities can be matched by using appropriate bias voltages.

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arXiv2008

0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires

We study the anomalous conductance plateau around $G = 0.7(2e^{2}/h)$ and the zero-bias anomaly in ballistic hole quantum wires with respect to in-plane magnetic fields applied parallel $B_{\parallel}$ and perpendicular $B_{\perp}$ to the quantum wire. As seen in electron quantum wires, the magnetic fields shift the 0.7 structure down to $G = 0.5(2e^{2}/h)$ and simultaneously quench the zero bias anomaly. However, these effects are strongly dependent on the orientation of the magnetic field, owing to the highly anisotropic effective Landé \emph{g}-factor $g^{*}$ in hole quantum wires. Our results highlight the fundamental role that spin plays in both the 0.7 structure and zero bias anomaly.

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arXiv2008

The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems

We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground-plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cool-down, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground-plane.

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arXiv2007

Low-Temperature Collapse of Electron Localisation in Two Dimensions

We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from insulating to metal-like transport behaviour is observed, which persists even when the resistivity of the system greatly exceeds the quantum of resistivity h/e^2. The results have been achieved by measuring transport on a mesoscopic length-scale while systematically varying the strength of disorder.

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arXiv2007

Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.

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arXiv2007

Field-tunable magnetic phases in a semiconductor-based two-dimensional Kondo lattice

We show the existence of intrinsic localized spins in mesoscopic high-mobility GaAs/AlGaAs heterostructures. Non-equilibrium transport spectroscopy reveals a quasi-regular distribution of the spins, and indicates that the spins interact indirectly via the conduction electrons. The interaction between spins manifests in characteristic zero-bias anomaly near the Fermi energy, and indicates gate voltage-controllable magnetic phases in high-mobility heterostructures. To address this issue further, we have also designed electrostatically tunable Hall devices, that allow a probing of Hall characteristics at the active region of the mesoscopic devices. We show that the zero field Hall coefficient has an anomalous contribution, which can be attributed to scattering by the localized spins. The anomalous contribution can be destroyed by an increase in temperature, source drain bias, or field range.

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arXiv2007

Sensitivity of the magnetic state of a spin lattice on itinerant electron orbital phase

Spatially extended localized spins can interact via indirect exchange interaction through Friedel oscillations in the Fermi sea. In arrays of localized spins such interaction can lead to a magnetically ordered phase. Without external magnetic field such a phase is well understood via a "two-impurity" Kondo model. Here we employ non-equilibrium transport spectroscopy to investigate the role of the orbital phase of conduction electrons on the magnetic state of a spin lattice. We show experimentally, that even tiniest perpendicular magnetic field can influence the magnitude of the inter-spin magnetic exchange.

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arXiv2007

Energy-dependent tunnelling from few-electron dynamic quantum dots

We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected.

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arXiv2007

Energy-level pinning and the 0.7 spin state in one dimension: GaAs quantum wires studied using finite-bias spectroscopy

We study the effects of electron-electron interactions on the energy levels of GaAs quantum wires (QWs) using finite-bias spectroscopy. We probe the energy spectrum at zero magnetic field, and at crossings of opposite-spin-levels in high in-plane magnetic field B. Our results constitute direct evidence that spin-up (higher energy) levels pin to the chemical potential as they populate. We also show that spin-up and spin-down levels abruptly rearrange at the crossing in a manner resembling the magnetic phase transitions predicted to occur at crossings of Landau levels. This rearranging and pinning of subbands provides a phenomenological explanation for the 0.7 structure, a one-dimensional (1D) nanomagnetic state, and its high-B variants.

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arXiv2007

Activation mechanisms in sodium-doped Silicon MOSFETs

We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.

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arXiv2007

Anomalous spin-dependent behaviour of one-dimensional subbands

We report a new electron interaction effect in GaAs/AlGaAs quantum wires. Using DC-bias spectroscopy, we show that large and abrupt changes occur to the energies of spin-down (lower energy) states as they populate. The effect is not observed for spin-up energy states. At B=0, interactions have a pronounced effect, in the form of the well-known 0.7 Structure. However, our new results show that interactions strongly affect the energy spectrum at all magnetic fields, from 0 to 16T, not just in the vicinity of the 0.7 Structure.

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arXiv2006

Ballistic electron spectroscopy

We demonstrate the feasibility of ballistic electron spectroscopy as a new tool for mesoscopic physics. A quantum dot is utilised as an energy-selective detector of non-equilibrium ballistic electrons injected into a two-dimensional electron system. In this paper we use a second quantum dot as the electron injector to evaluate the scheme. We propose an application in the study of interacting 1D and 0D systems.

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arXiv2006

Anisotropic Zeeman splitting in ballistic one-dimensional hole systems

We have studied the effect of an in-plane magnetic field B on a one-dimensional hole system in the ballistic regime created by surface gate confinement. We observed clearly the lifting of the spin degeneracy due to the Zeeman effect on the one dimensional subbands for B applied parallel to the channel. In contrast, no Zeeman splitting is detected for B applied perpendicular to the channel, revealing an extreme anisotropy of the effective Lande g-factor g*. We demonstrate that this anisotropy is a direct consequence of the one-dimensional confinement on a system with strong spin-orbit coupling.

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arXiv2006

Zeeman splitting in ballistic hole quantum wires

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin-splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum-confinement for spin-splitting in nanostructures with strong spin-orbit coupling.

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arXiv2006

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.

cond-mat.str-el↗

arXiv2006

Fano effect and Kondo effect in quantum dots formed in strongly coupled quantum wells

We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two strongly coupled dots. When the tunnel barriers in the upper well are reduced we observe the Fano effect due to the interfering paths through a resonant state in the lower well and a continuum state in the upper well. In both regimes an in plane magnetic field reduces the coupling between the wells when the magnetic length is comparable to the center to center separation of the wells. We also observe the Kondo effect which allows the spin states of the double dot system to be probed.

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