M. Peterca | Searcharxiv

arXiv2004

Giant Dielectric Permittivity of Electron-Doped Manganite Thin Films, Ca(1-x)La(x)MnO(3) ($0<= x<= 0.03)

A giant low-frequency, in-plane dielectric constant, eps~10^6, for epitaxial thin films of Ca(1-x)La(x)MnO(3) (x<=0.03) was observed over a broad temperature range, 4K <= T 300K. This phenomenon is attributed to an internal barrier-layer capacitor (IBLC) structure, with insulating boundaries between semiconducting grains. The room-temperature eps increases substantially with electron (La) doping. The measured values of eps exceed those of conventional two-phase IBLC materials based on (Ba,Sr)TiO(3) as well as recently discovered CaCu(3)Ti(4)O(12) and (Li,Ti) doped NiO.

cond-mat.str-el↗

arXiv2004

Low-Temperature Permittivity of Insulating Perovskite Manganites

Measurements of the low-frequency (f<=100 kHz) permittivity and conductivity at T<= 150 K are reported for La(1-x)Ca(x)MnO(3) (0<=x<=1) and Ca(1-y)Sr(y)MnO(3) (0<=y<=0.75) having antiferromagnetic, insulating ground states covering a broad range of Mn valencies from Mn(3+) to Mn(4+). Static dielectric constants are determined from the low-T limiting behavior. With increasing T, relaxation peaks associated with charge-carrier hopping are observed in the real part of the permittivities and analyzed to determine dopant binding energies. The data are consistent with a simple model of hydrogenic impurity levels and imply effective masses m*/m_e~3 for the Mn(4+) compounds. Particularly interesting is a large dielectric constant (~100) associated with the C-type antiferromagnetic state near the composition La(0.2)Ca(0.8)MnO(3).

cond-mat.str-el↗