arXiv subjects

M. Polini

Publications and source records attributed to M. Polini.

At least 37 records · Page 2Linked to original sources

arXiv2016

Ultra-strong nonlinear optical processes and trigonal warping in MoS$_2$ layers

We report ultra-strong high-order nonlinear multiphoton processes in monolayer MoS$_2$ (1L-MoS$_2$): the third harmonic is thirty times stronger than the second harmonic, and the fourth harmonic is comparable to the second harmonic. We find that second and third harmonic processes are strongly dependent on elliptical polarization, which can be used to selectively tune harmonic generation with different orders. We explain this by calculating the nonlinear response functions of 1L-MoS$_2$ with a continuum-model Hamiltonian and quantum-mechanical diagrammatic perturbation theory, highlighting the crucial role of trigonal warping. A similar effect is expected for all other transition-metal dichalcogenides. Our results pave the way for efficient and tunable harmonic generation based on layered materials for various applications, including microscopy and imaging

cond-mat.mes-hall↗

arXiv2016

Scaling approach to tight-binding transport in realistic graphene devices: the case of transverse magnetic focusing

Ultra-clean graphene sheets encapsulated between hexagonal boron nitride crystals host two-dimensional electron systems in which low-temperature transport is solely limited by the sample size. We revisit the theoretical problem of carrying out microscopic calculations of non-local ballistic transport in such micron-scale devices. By employing the Landauer-Buttiker scattering theory, we propose a novel scaling approach to tight-binding non-local transport in realistic graphene devices. We test our numerical method against experimental data on transverse magnetic focusing (TMF), a textbook example of non-local ballistic transport in the presence of a transverse magnetic field. This comparison enables a clear physical interpretation of all the observed features of the TMF signal, including its oscillating sign.

cond-mat.mes-hall↗

arXiv2016

Negative local resistance caused by viscous electron backflow in graphene

Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above liquid nitrogen temperature. Under these conditions, electrons can behave as a viscous liquid and exhibit hydrodynamic phenomena similar to classical liquids. Here we report strong evidence for this transport regime. We find that doped graphene exhibits an anomalous (negative) voltage drop near current injection contacts, which is attributed to the formation of submicrometer-size whirlpools in the electron flow. The viscosity of graphene's electron liquid is found to be ~0.1 m$^2$ /s, an order of magnitude larger than that of honey, in agreement with many-body theory. Our work shows a possibility to study electron hydrodynamics using high quality graphene.

cond-mat.str-el↗

arXiv2016

Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.

cond-mat.mes-hall↗

arXiv2012

Ultrafast collinear scattering and carrier multiplication in graphene

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale to a hot Fermi-Dirac distribution, that subsequently cools via phonon emission. Here we combine pump-probe spectroscopy, featuring extreme temporal resolution and broad spectral coverage, with a microscopic theory based on the quantum Boltzmann equation, to investigate electron-electron collisions in graphene during the very early stages of relaxation. We identify the fundamental physical mechanisms controlling the ultrafast dynamics in graphene, in particular the significant role of ultrafast collinear scattering, enabling Auger processes, including charge multiplication, key to improving photovoltage generation and photodetectors.

cond-mat.mes-hall↗

arXiv2012

Classical to quantum crossover of the cyclotron resonance in graphene: A study of the strength of intraband absorption

We report on absolute magneto-transmission experiments on highly-doped quasi-free-standing epitaxial graphene targeting the classical-to-quantum crossover of the cyclotron resonance. This study allows us to directly extract the carrier density and also other relevant quantities such as the quasiparticle velocity and the Drude weight, which is precisely measured from the strength of the cyclotron resonance. We find that the Drude weight is renormalized with respect to its non-interacting (or random-phase-approximation) value and that the renormalization is tied to the quasiparticle velocity enhancement. This finding is in agreement with recent theoretical predictions, which attribute the renormalization of the Drude weight in graphene to the interplay between broken Galilean invariance and electron-electron interactions.

cond-mat.mes-hall↗

arXiv2012

Graphene field effect transistors as room-temperature Terahertz detectors

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.

cond-mat.mes-hall↗

arXiv2011

Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice

Electrons in artificial lattices enable explorations of the impact of repulsive Coulomb interactions in a tunable system. We have trapped two-dimensional electrons belonging to a gallium arsenide quantum well in a nanofabricated lattice with honeycomb geometry. We probe the excitation spectrum in a magnetic field identifying novel collective modes that emerge from the Coulomb interaction in the artificial lattice as predicted by the Mott-Hubbard model. These observations allow us to determine the Hubbard gap and suggest the existence of a novel Coulomb-driven ground state. This approach offers new venues for the study of quantum phenomena in a controllable solid-state system.

cond-mat.str-el↗

arXiv2010

Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

cond-mat.mes-hall↗

arXiv2009

Engineering artificial graphene in a two-dimensional electron gas

At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphene-like system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultra high-mobility electrons with linearly-dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.

cond-mat.mes-hall↗

arXiv2008

Effect of disorder on the interacting Fermi gases in a one-dimensional optical lattice

Interacting two-component Fermi gases loaded in a one-dimensional (1D) lattice and subjected to an harmonic trapping potential exhibit interesting compound phases in which fluid regions coexist with local Mott-insulator and/or band-insulator regions. Motivated by experiments on cold atoms inside disordered optical lattices, we present a theoretical study of the effects of a correlated random potential on these ground-state phases. We employ a lattice version of density-functional theory within the local-density approximation to determine the density distribution of fermions in these phases. The exchange-correlation potential is obtained from the Lieb-Wu exact solution of Fermi-Hubbard model. On-site disorder (with and without Gaussian correlations) and harmonic trap are treated as external potentials. We find that disorder has two main effects: (i) it destroys the local insulating regions if it is sufficiently strong compared with the on-site atom-atom repulsion, and (ii) it induces an anomaly in the inverse compressibility at low density from quenching of percolation. For sufficiently large disorder correlation length the enhancement in the inverse compressibility diminishes.

cond-mat.dis-nn↗

arXiv2007

Analytic theory of pair distribution functions in symmetric electron-electron and electron-hole bilayers

We present a self-consistent analytic theory of the intra-layer and inter-layer pair correlation functions in electron-electron and electron-hole fluid bilayer systems. Our approach involves the solution of a zero-energy scattering Schroedinger equation with an effective potential which includes a Bose-like term from Jastrow-Feenberg correlations and a Fermi term from kinetic energy and exchange, tailored to yield the Hartree-Fock limit at high carrier density. The theory is also shown to satisfy the plasmon sum rule and the charge neutrality condition. We obtain good agreement with the available Quantum Diffusion Monte Carlo (DMC) data in symmetric bilayers over a wide range of carrier density and layer spacing, and stress the role of three-body correlation terms in yielding fully quantitative agreement at strong coupling. Signals of impending transitions to density-modulated states at strong coupling and low layer spacing appear in the calculated pair correlations through inter-layer in-phase oscillations for electron-hole bilayers and out-of-phase oscillations for electron-electron bilayers, in agreement with the DMC findings.

cond-mat.mes-hall↗

arXiv2006

Density-functional theory of inhomogeneous electron systems in thin quantum wires

Motivated by current interest in strongly correlated quasi-one-dimensional (1D) Luttinger liquids subject to axial confinement, we present a novel density-functional study of few-electron systems confined by power-low external potentials inside a short portion of a thin quantum wire. The theory employs the 1D homogeneous Coulomb liquid as the reference system for a Kohn-Sham treatment and transfers the Luttinger ground-state correlations to the inhomogeneous electron system by means of a suitable local-density approximation (LDA) to the exchange-correlation energy functional. We show that such 1D-adapted LDA is appropriate for fluid-like states at weak coupling, but fails to account for the transition to a ``Wigner molecules'' regime of electron localization as observed in thin quantum wires at very strong coupling. A detailed analyzes is given for the two-electron problem under axial harmonic confinement.

cond-mat.str-el↗

arXiv2006

Emergence of Wigner molecules in one-dimensional systems of repulsive fermions under harmonic confinement

A Bethe-Ansatz spin-density functional approach is developed to evaluate the ground-state density profile in a system of repulsively interacting spin-1/2 fermions inside a quasi-one-dimensional harmonic well. The approach allows for the formation of antiferromagnetic quasi-order with increasing coupling strength and reproduces with high accuracy the exact solution that is available for the two-fermion system.

cond-mat.str-el↗

arXiv2006

Interacting Fermi Gases in Disordered One-Dimensional Lattices

Interacting two-component Fermi gases loaded in a one-dimensional (1D) lattice and subject to harmonic trapping exhibit intriguing compound phases in which fluid regions coexist with local Mott-insulator and/or band-insulator regions. Motivated by experiments on cold atoms inside disordered optical lattices, we present a theoretical study of the effects of a random potential on these ground-state phases. Within a density-functional scheme we show that disorder has two main effects: (i) it destroys the local insulating regions if it is sufficiently strong compared with the on-site atom-atom repulsion, and (ii) it induces an anomaly in the compressibility at low density from quenching of percolation.

cond-mat.str-el↗

arXiv2005

Low-temperature magnetization of (Ga,Mn)As semiconductors

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k.p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum uctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from ~2% to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

cond-mat.mtrl-sci↗

arXiv2005

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.

cond-mat.mtrl-sci↗

arXiv2005

Ground-state densities and pair correlation functions in parabolic quantum dots

We present an extensive comparative study of ground-state densities and pair distribution functions for electrons confined in two-dimensional parabolic quantum dots over a broad range of coupling strength and electron number. We first use spin-density-functional theory to determine spin densities that are compared with Diffusion Monte Carlo (DMC) data. This accurate knowledge of one-body properties is then used to construct and test a local approximation for the electron-pair correlations. We find very satisfactory agreement between this local scheme and the available DMC data, and provide a detailed picture of two-body correlations in a coupling-strength regime preceding the formation of Wigner-like electron ordering.

cond-mat.mes-hall↗