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M. Potemski

Publications and source records attributed to M. Potemski.

At least 55 records · Page 3Linked to original sources

Raman scattering of graphene based systems in high magnetic fields

We review the different results obtained in the last decade in the field of Raman scattering of graphene based systems, with an applied magnetic field. Electronic properties of graphene based systems with an applied magnetic field will first be described. The phonon response in magnetic field, the magneto-phono resonance, will then be introduced and described in different systems, including graphene, multilayer graphene and bulk graphite. Electronic Raman scattering is then be discussed in the context of Landau level spectroscopy, of electron phonon interaction and of electron-electron interaction.

cond-mat.mes-hall↗

2s exciton-polariton revealed in an external magnetic field

We demonstrate the existence of the excited state of an exciton-polariton in a semiconductor microcavity. The strong coupling of the quantum well heavy-hole exciton in an excited 2s state to the cavity photon is observed in non-zero magnetic field due to surprisingly fast increase of Rabi energy of the 2s exciton-polariton in magnetic field. This effect is explained by a strong modification of the wave-function of the relative electron-hole motion for the 2s exciton state.

cond-mat.quant-gas↗

Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure

We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B-periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.

cond-mat.mes-hall↗

Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles

Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pumping experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation.

cond-mat.mes-hall↗

Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

We present low temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field $B$ applied to monolayers of different semiconducting transition metal dichalcogenides. For both WSe$_2$ and WS$_2$ monolayers, the dark exciton emission is observed at $\sim$50 meV below the bright exciton peak and displays a characteristic doublet structure which intensity is growing with $B^2$, while no magnetic field induced emission peaks appear for MoSe$_2$ monolayer. Our experiments also show that the MoS$_2$ monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of $\sim$100 meV.

cond-mat.mes-hall↗

Resonant quenching of Raman scattering due to out-of-plane A$_{1g}$/A'$_1$ modes in few-layer MoTe$_2$

Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is observed in 2L MoTe$_2$. The intensity decreases with decreasing temperature down to 220 K and the A$_{1g}$ mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures and at T=5 K it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe$_2$ in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode, (with vibrations of tellurium atoms in the central layer shifted by 180$^o$ with respect to the vibrations in outer layers), only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe$_2$ is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe$_2$.

cond-mat.mes-hall↗

Direct determination of zero-field splitting for single Co$^{2+}$ ion embedded in a CdTe/ZnTe quantum dot

When Co$^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co$^{2+}$ states with spin projection $S_z = \pm 3/2$ and $S_z = \pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of individual Co$^{2+}$ ion in epitaxial CdTe quantum dot in ZnTe barrier. Using partially allowed optical transitions we measure strain induced zero-field splitting of Co$^{2+}$ ion directly on excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of $S_z = + 3/2$ and $S_z = - 1/2$ Co$^{2+}$ spin states in magnetic field, we determine axial and in-plane components of crystal field acting on Co$^{2+}$. Proposed technique can be applied for optical determination of zero-field splitting of other transition metal ions in quantum dots.

cond-mat.mes-hall↗

Magneto-optical signature of massless Kane electrons in Cd3As2

We report on optical reflectivity experiments performed on Cd3As2 over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.

cond-mat.mes-hall↗

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

cond-mat.mes-hall↗

Raman scattering in few-layer MoTe$_{2}$

We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can be explained in terms of interlayer interactions between single atomic planes of MoTe$_{2}$. In the case of low-energy shear and breathing modes of rigid interlayer vibrations it is shown that their energy evolution with the number of layers can be well reproduced within a linear chain model with only the nearest neighbor interaction taken into account. Based on this model the corresponding in-plane and out-of-plane force constants are determined. We also show that the Raman scattering in MoTe$_{2}$ measured using 514.5 nm (2.41 eV) laser light excitation results in much simpler spectra. We argue that the rich structure of the out-of-plane vibrational modes observed in Raman scattering spectra excited with the use of 632.8 nm laser light results from its resonance with the electronic transition at the M or K points of the MoTe$_{2}$ first Brillouin zone.

cond-mat.mtrl-sci↗

Experimental approval of the extended flat bands and gapped subbands in rhombohedral multilayer graphene

Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic properties of ABC graphene multilayers. Here, we report the first magneto optical study of a large ABC domain in a graphene multilayers flake, with ABC sequences exceeding 17 graphene sheets. The ABC-stacked multilayers can be fingerprinted with a characteristic electronic Raman scattering response, which persists even at room temperatures. Tracing the magnetic field evolution of the inter Landau level excitations from this domain gives strong evidence to the existence of a dispersionless electronic band near the Fermi level, characteristic of such stacking. Our findings present a simple yet powerful approach to probe ABC stacking in graphene multilayer flakes, where this highly degenerated band appears as an appealing candidate to host strongly correlated states.

cond-mat.mes-hall↗

The hole Fermi surface in Bi$_{2}$Se$_{3}$ probed by quantum oscillations

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between $0^\circ$ and $90^\circ$, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to $24$~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by $GW$ calculations.

cond-mat.mes-hall↗

Energy spectrum of confined positively charged excitons in single quantum dots

A theoretical model, which relates the binding energy of a positively charged exciton in a quantum dot with the confinement energy is presented. It is shown that the binding energy, defined as the energy difference between the corresponding charged and neutral complexes confined on the same excitonic shell strongly depends on the shell index. Moreover, it is shown that the ratio of the binding energy for positively charged excitons from the $p$- and $s$-shells of a dot depends mainly on the nearly perfect confinement in the dot, which is due to the "hidden symmetry" of the multi-electron-hole system. We applied the theory to the excitons confined to a single GaAlAs/AlAs quantum dots. The relevant binding energy was determined using the micro-photoluminescence and micro-photoluminescence excitation magneto-spectroscopy. We show that within our theory, the confinement energy determined using the ratio of the binding energy corresponds well to the actual confinement energy of the investigated dot.

cond-mat.mes-hall↗

Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots

We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71); diamagnetic shift $γ=$2.5 $μ$eV$/$T$^{2}$ ($γ=$1.3 $μ$eV$/$T$^{2}$). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.

cond-mat.mes-hall↗

The excited spin-triplet state of a charged exciton in quantum dots

We report on single-object spectroscopic studies of a characteristic set of three resonances which appear in GaAlAs/AlAs quantum dot structures. The experiments included the photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, photon-correlation measurements, analysis of the linear polarization of the emission spectra as well as the PL and PLE spectroscopy performed as a function of magnetic field. The investigated resonances are assigned to three different states of a positively charged exciton: a singlet ground state, a conventional triplet state (involving an electron from the ground state electronic $s$-shell), and additionally, a highly excited triplet state (involving the electron from the excited electronic $p$-shell). Advantageously (due to partially suppressed relaxation efficiency), the emission due to the highly excited triplet can seen in the spectra which allows us to scrupulously determine its properties and compare them to those of the conventional triplet state. Whereas both triplet states show similar patterns of the fine structure and Zeeman splitting, the splitting amplitudes are found to be significantly different for these two states. The presented results emphasize the role of the symmetry of the electronic state on the properties of the triplet states of the two holes + electron excitonic complex.

cond-mat.mes-hall↗

Strong interband Faraday rotation in 3D topological insulator Bi2Se3

The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in which time-reversal symmetry has been broken by an externally applied magnetic field. Here we report on the Faraday rotation induced in the prominent 3D topological insulator Bi2Se3 due to bulk interband excitations. The origin of this non-resonant effect, extraordinarily strong among other non-magnetic materials, is traced back to the specific Dirac-type Hamiltonian for Bi2Se3, which implies that electrons and holes in this material closely resemble relativistic particles with a non-zero rest mass.

cond-mat.mes-hall↗

Tuning valley polarization in a WSe2 monolayer with a tiny magnetic field

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some limitations on the development of opto-valleytronics. Here we show that inter-valley scattering of excitons can be significantly suppressed in a $\mathrm{WSe}_2$ monolayer, a direct-gap two-dimensional semiconductor with the exciton ground state being optically dark. We demonstrate that the already inefficient relaxation of the exciton pseudospin in such system can be suppressed even further by the application of a tiny magnetic field of $\sim$100 mT. Time-resolved spectroscopy reveals the pseudospin dynamics to be a two-step relaxation process. An initial decay of the pseudospin occurs at the level of dark excitons on a time scale of 100 ps, which is tunable with a magnetic field. This decay is followed by even longer decay ($>1$ ns), once the dark excitons form more complex objects allowing for their radiative recombination. Our finding of slow valley pseudospin relaxation easily manipulated by the magnetic field open new prospects for engineering the dynamics of the valley pseudospin in transition metal dichalcogenides.

cond-mat.mes-hall↗

Quadexciton cascade and fine structure splitting of the triexciton in a single quantum dot

We report the properties of emission lines associated with the cascaded recombination of a quadexciton in single GaAlAs/AlAs quantum dots, studied by means of polarization-resolved photoluminescence and single-photon correlation experiments. It is found that photons which are emitted in a double-step 4X-3X process preserve their linear polarization, similarly to the case of conserved polarization of correlated photons in the 2X-X cascade. In contrast, an emission of either co-linear or cross-linear pairs of photons is observed for the 3X-2X cascade. Each emission line associated with the quadexciton cascade shows doublet structure in the polarization-resolved photoluminescence experiment. The maximum splitting is seen when the polarization axis is chosen along and perpendicular to the [110] crystallographic direction. This effect is ascribed to the fine structure splitting of the exciton and triexciton states in the presence of an anisotropic confining potential of ae dot. We also show that the splitting in the triexciton state surpasses that in the exciton state by a factor up to eight and their ratio scales with the energy distance between the 3X and X emission lines, thus, very likely, with a lateral size and/or a composition of the dot.

cond-mat.mes-hall↗