arXiv subjects

M. R. M. Atalla

Publications and source records attributed to M. R. M. Atalla.

3 recordsLinked to original sources

arXiv2026

A Silicon-Compatible Uncooled Compact Broadband Infrared Spectrometer

Infrared spectroscopy is a widely used technique for molecular identification, yet its widespread deployment remains constrained by bulky instrumentation, cryogenic cooling requirements, and limited portability. Here we demonstrate broadband near- to short-wave infrared spectroscopy enabled by a silicon-compatible GeSn photodetector integrated into a compact digital micromirror device-based single-pixel architecture. By combining detector design with targeted optical reconfiguration and wavelength recalibration, we extend the operational range up to 2.4 micrometers while maintaining room-temperature, zero-bias photovoltaic operation. System-level benchmarking quantifies the intrinsic trade-off between spectral extension and detectivity in narrow-bandgap photodetection, yielding a specific detectivity of $1.12 \times 10^{10}$ cm Hz$^{1/2}$ W$^{-1}$ at 1.55 micrometers with an extended wavelength cut-off. We validate the capabilities of the obtained spectrometer through selective identification of representative commodity plastics, demonstrating a lightweight, low-power, and mechanically robust platform for portable and autonomous deployment. Despite the expected increase in generation-limited noise, access to strong polymer combination bands beyond 1.7 micrometers allows enhanced material discrimination. This work establishes a pathway toward scalable distributed molecular sensing and broadens access to infrared spectroscopy for environmental monitoring, industrial process control, and community-level chemical detection.

physics.optics↗

arXiv2026

Extending Silicon Avalanche Photodetection Beyond $2~μ$m by Direct GeSn Integration

Silicon avalanche photodiodes provide a technologically mature platform for sensitive photodetection, but their spectral response is intrinsically limited by the silicon bandgap. Extending their operation into the infrared requires the integration of narrow-bandgap absorbers while preserving efficient avalanche multiplication and compatibility with silicon processing. Here, we propose and demonstrate a monolithic approach that combines direct, buffer-free growth of GeSn on silicon with a lateral thin-junction separate-absorption-multiplication architecture. The GeSn layer, with a Sn composition reaching 6 at.%, extends optical absorption to a wavelength of $2.6~μ$m, while avalanche multiplication is spatially confined to an ion-implanted silicon lateral junction. This separation enables independent control of infrared absorption and carrier multiplication without the thick Ge virtual substrates conventionally used for GeSn epitaxy. GeSn-on-Si avalanche photodiodes exhibit low pre-breakdown dark current, stable breakdown at 72 V independent of device diameter, and clear infrared photoresponse extending beyond $2~μ$m. At 78 K, the devices exhibit external quantum efficiency exceeding 100%, reaching 163% at $1.55~μ$m, providing direct evidence of avalanche multiplication. These results establish direct integration of narrow-bandgap group-IV absorbers with silicon multiplication regions as a scalable strategy for extending the spectral reach of silicon avalanche photodetection, opening a route toward monolithic infrared detectors for sensing, imaging, communications, LiDAR, and quantum photonics

physics.optics↗

arXiv2021

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

The availability of high-frequency pulsed emitters in the $2-2.5\,μ$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition, artificial intelligence, and medical imaging. However, developing these emerging technologies and their large-scale use depend on the availability of high-speed, low-noise, and cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown on silicon wafers featuring a high broadband operation covering the extended-SWIR range with a peak responsivity of 0.3 A/W at room temperature. These GeSn devices exhibit a high bandwidth reaching 7.5 GHz at 5 V bias with a 2.6 $μ$m cutoff wavelength, and their integration in ultrafast time-resolved spectroscopy applications is demonstrated. In addition to enabling time-resolved electro-luminescence at 2.3 $μ$m, the high-speed operation of GeSn detectors was also exploited in the diagnostics of ultra-short pulses of a supercontinuum laser with a temporal resolution in the picosecond range at 2.5 $μ$m. Establishing these capabilities highlights the potential of manufacturable GeSn photodiodes for silicon-integrated high-speed extended-SWIR applications.

physics.app-ph↗