arXiv subjects

M. Reyes Calvo

Publications and source records attributed to M. Reyes Calvo.

14 recordsLinked to original sources

arXiv2025

Strain Engineering of Correlated Charge-Ordered Phases in 1T-TaS2

Strain engineering is a powerful strategy for controlling the structural and electronic properties of two-dimensional materials, particularly in systems hosting charge density wave (CDW) order. In this work, we apply uniaxial tensile and compressive strain to thin 1T-TaS2 flakes using a flexible, device-compatible platform, and systematically investigate the strain-dependent behavior of the nearly commensurate (NC) to incommensurate (IC) CDW phase transition. This transition is driven by Joule heating at room temperature. Electrical transport measurements reveal that both the switching threshold voltage and the resistance of the NC-CDW phase exhibit clear, reversible strain dependence. Furthermore, we identify a quadratic dependence between the strain-induced resistance change and the threshold voltage, confirming that piezoresistive modulation governs the strain-tunability of the phase transition. We demonstrate a room-temperature, electrically-readout strain and displacement sensor with threshold-like response in a programmable window. These results highlight the potential of 1T-TaS2 for on-chip sensing of strain and displacement.

cond-mat.mes-hall↗

arXiv2025

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the two-dimensional (2D) limit. Here, we demonstrate that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few-layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature-dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the Néel temperature by ~10K. Our experimental results are fully supported by first-principles calculations, which link the observed effects to a strain-driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine-tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices.

cond-mat.mtrl-sci↗

arXiv2025

Enhanced Biaxial Compressive Strain Tuning of 2D semiconductors via Hot Dry Transfer on Polymer Substrates

Strain engineering is an effective tool for tailoring the properties of two-dimensional (2D) materials, especially for tuning quantum phenomena. Among the limited methods available for strain engineering under cryogenic conditions, thermal mismatch with polymeric substrates provides a simple and affordable strategy to induce biaxial compressive strain upon cooling. In this work, we demonstrate the transfer of unprecedentedly large levels of uniform biaxial compressive strain to single-layer WS$_2$ by employing a pre-straining approach prior to cryogenic cooling. Using a hot-dry-transfer method, single-layer WS$_2$ samples were deposited onto thermally expanded polymeric substrates at 100 $^\circ$C. As the substrate cools to room temperature, it contracts, inducing biaxial compressive strain (up to ~0.5%) in the WS$_2$ layer. This pre-strain results in a measurable blueshift in excitonic energies compared to samples transferred at room temperature, which serve as control (not pre-strained) samples. Subsequent cooling of the pre-strained samples from room temperature down to 5 K leads to a remarkable total blueshift of ~200 meV in the exciton energies of single-layer WS$_2$. This energy shift surpasses previously reported values, indicating superior levels of biaxial compressive strain induced by the accumulated substrate contraction of ~1.7%. Moreover, our findings reveal a pronounced temperature dependence in strain transfer efficiency, with gauge factors approaching theoretical limits for ideal strain transfer at 5 K. We attribute this enhanced efficiency to the increased Young's modulus of the polymeric substrate at cryogenic temperatures.

cond-mat.mtrl-sci↗

arXiv2024

Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2

The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.

cond-mat.mes-hall↗

arXiv2023

Out-of-plane spin-to-charge conversion at low temperatures in graphene/MoTe$_2$ heterostructures

Multi-directional spin-to-charge conversion - in which spin polarizations with different orientations can be converted into a charge current in the same direction - has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin to charge conversion can occur in unconventional configurations in which spin polarization and charge current where charge current, spin current and polarization do not need to be mutually orthogonal. Here, we explore, in the low temperature regime, the spin-to-charge conversion in heterostructures of graphene with the low-symmetry 1T' phase of MoTe$_2$. First, we observe the emergence of charge conversion for out-of-plane spins at temperatures below 100 K. This unconventional component is allowed by the symmetries of both MoTe$_2$ and graphene and likely arises from spin Hall effect in the spin-orbit proximitized graphene. Moreover, we examine the low-temperature evolution of non-local voltage signals arising from the charge conversion of the two in-plane spin polarizations, which have been previously observed at higher temperature. As a result, we report omni-directional spin-to-charge conversion - for all spin polarization orientations - in graphene/MoTe${_2}$ heterostructures at low temperatures.

cond-mat.mes-hall↗

arXiv2022

Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures

Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed to maximize the signals arising from the SCI processes with conventional mutually orthogonal geometry. However, in low-symmetry materials, certain non-orthogonal SCI processes are also allowed. Since the standard SCI experiment is limited to charge current flowing only in one direction in the SOC material, certain allowed SCI configurations remain unexplored. In this work, we performed a thorough SCI study in a graphene-based lateral spin valve combined with low-symmetry MoTe$_2$. Due to a very low contact resistance between the two materials, we could detect SCI signals using both a standard configuration, where the charge current is applied along the MoTe$_2$, and a recently introduced (3D-current) configuration, where the charge current flow can be controlled in three directions within the heterostructure. As a result, we observed three different SCI components, one orthogonal and two non-orthogonal, giving new insight into the SCI processes in low-symmetry materials. The large SCI signals obtained at room temperature, along with the versatility of the 3D-current configuration, provide feasibility and flexibility to the design of the next generation of spin-based devices.

cond-mat.mes-hall↗

arXiv2020

Volkov-Pankratov states in topological graphene nanoribbons

In topological systems, a modulation in the gap onset near interfaces can lead to the appearance of massive edge states, as were first described by Volkov and Pankratov. In this work, we study graphene nanoribbons in the presence of intrinsic spin-orbit coupling smoothly modulated near the system edges. We show that this space modulation leads to the appearance of Volkov-Pankratov states, in addition to the topologically protected ones. We obtain this result by means of two complementary methods, one based on the effective low-energy Dirac equation description and the other on a fully numerical tight-binding approach, finding excellent agreement between the two. We then show how transport measurements might reveal the presence of Volkov-Pankratov states, and discuss possible graphene-like structures in which such states might be observed.

cond-mat.mes-hall↗

arXiv2019

Living on the edge: Topology, electrostatics and disorder

We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function describing the band inversion and the band bending due to electrostatic effects between the bulk of the quantum well and the vacuum. Within this minimal model we identify distinct parameter sets that can lead to the co-existence of the two types of edge states, and that determine their number and characteristics. We propose several experimental setups that could demonstrate their presence in two-dimensional topological systems, as well as ways to regulate or tune the contribution of the massive edge states to the conductance of associated electronic devices. Our results suggest that such states may also be present in novel two-dimensional Van der Waals topological materials.

cond-mat.mes-hall↗

arXiv2019

Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe$_2$ at room temperature

Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect has been widely studied in heavy metals with strong spin-orbit coupling. While the high crystal symmetry in these materials limits the conversion to the orthogonal configuration, unusual configurations are expected in low symmetry transition metal dichalcogenide semimetals, which could add flexibility to the electrical injection and detection of pure spin currents. Here, we report the observation of spin-to-charge conversion in MoTe$_2$ flakes, which are stacked in graphene lateral spin valves. We detect two distinct contributions arising from the conversion of two different spin orientations. In addition to the conventional conversion where the spin polarization is orthogonal to the charge current, we also detect a conversion where the spin polarization and the charge current are parallel. Both contributions, which could arise either from bulk spin Hall effect or surface Edelstein effect, show large efficiencies comparable to the best spin Hall metals and topological insulators. Our finding enables the simultaneous conversion of spin currents with any in-plane spin polarization in one single experimental configuration.

cond-mat.mes-hall↗

arXiv2018

Room temperature spin Hall effect in graphene/MoS$_2$ van der Waals heterostructures

Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS$_2$ proximity and for varying temperature up to room temperature. The fact that spin transport and spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Remarkably for a single graphene/MoS$_2$ heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS$_2$. By comparing our results to theoretical calculations, the latter scenario is found the most plausible one. Our findings pave the way towards the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.

cond-mat.mes-hall↗

arXiv2018

Orbital-selective spin excitation of a magnetic porphyrin

Scattering of electrons by localized spins is the ultimate process enabling electrical detection and control of the magnetic state of a spin-doped material. At the molecular scale, this scattering is mediated by the electronic orbitals hosting the spin. Here we report the selective excitation of a molecular spin by electrons tunneling through different molecular orbitals. Spatially-resolved tunneling spectra on iron porphyrins on Au(111) reveal that the inelastic spin excitation extends beyond the iron site. The inelastic features also change shape and symmetry along the molecule. Combining DFT simulations with a phenomenological scattering model, we show that the extension and lineshape variations of the inelastic signal are due to excitation pathways assisted by different frontier orbitals, each of them with a different degree of hybridization with the surface. By selecting the intramolecular site for electron injection, the relative weight of iron and pyrrole orbitals in the tunneling process is modified. In this way, the spin excitation mechanism, reflected by its spectral lineshape, changes depending on the degree of localization and energy alignment of the chosen molecular orbital.

cond-mat.mes-hall↗

arXiv2015

Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction under broken time reversal symmetry (TRS). Here we first establish a rigorous framework for understanding the magnetic field dependence of electrostatically gated QSH devices. We then report unexpected edge conduction under broken TRS, using a unique cryogenic microwave impedance microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure. At zero magnetic field and low carrier densities, clear edge conduction is observed in the local conductivity profile of this device but not in the 5.5 nm control device whose band structure is trivial. Surprisingly, the edge conduction in the 7.5 nm device persists up to 9 T with little effect from the magnetic field. This indicates physics beyond simple QSH models, possibly associated with material- specific properties, other symmetry protection and/or electron-electron interactions.

cond-mat.mes-hall↗

arXiv2014

Control of single-spin magnetic anisotropy by exchange coupling

The properties of quantum systems interacting with their environment, commonly called open quantum systems, can be strongly affected by this interaction. While this can lead to unwanted consequences, such as causing decoherence in qubits used for quantum computation, it can also be exploited as a probe of the environment. For example, magnetic resonance imaging is based on the dependence of the spin relaxation times of protons in water molecules in a host's tissue. Here we show that the excitation energy of a single spin, which is determined by magnetocrystalline anisotropy and controls its stability and suitability for use in magnetic data storage devices, can be modified by varying the exchange coupling of the spin to a nearby conductive electrode. Using scanning tunnelling microscopy and spectroscopy, we observe variations up to a factor of two of the spin excitation energies of individual atoms as the strength of the spin's coupling to the surrounding electronic bath changes. These observations, combined with calculations, show that exchange coupling can strongly modify the magnetic anisotropy. This system is thus one of the few open quantum systems in which the energy levels, and not just the excited-state lifetimes, can be controllably renormalized. Furthermore, we demonstrate that the magnetocrystalline anisotropy, a property normally determined by the local structure around a spin, can be electronically tuned. These effects may play a significant role in the development of spintronic devices5 in which an individual magnetic atom or molecule is coupled to conducting leads.

cond-mat.mes-hall↗

arXiv2012

Analysis of the Kondo effect in ferromagnetic atomic-sized contacts

Atomic contacts made of ferromagnetic metals present zero-bias anomalies in the differential conductance due to the Kondo effect. These systems provide a unique opportunity to perform a statistical analysis of the Kondo parameters in nanostructures since a large number of contacts can be easily fabricated using break-junction techniques. The details of the atomic structure differ from one contact to another so a large number of different configurations can be statistically analyzed. Here we present such a statistical analysis of the Kondo effect in atomic contacts made from the ferromagnetic transition metals Ni, Co and Fe. Our analysis shows clear differences between materials that can be understood by fundamental theoretical considerations. This combination of experiments and theory allow us to extract information about the origin and nature of the Kondo effect in these systems and to explore the influence of geometry and valence in the Kondo screening of atomic-sized nanostructures.

cond-mat.mes-hall↗