SearcharxivSearch

arXiv subjects

M. S. Durkin

Publications and source records attributed to M. S. Durkin.

2 recordsLinked to original sources

Few-electron highly charged muonic Ar atoms verified by electronic $K$ x rays

Electronic $K$ x rays emitted by muonic Ar atoms in the gas phase were observed using a superconducting transition-edge-sensor microcalorimeter. The high-precision energy spectra provided a clear signature of the presence of muonic atoms accompanied by a few electrons, which have never been observed before. One-, two-, and three-electron bound, i.e., H-like, He-like, and Li-like, muonic Ar atoms were identified from electronic $K$ x rays and hyper-satellite $K$ x rays. These $K$ x rays are emitted after the charge transfer process by the collisions with surrounding Ar atoms. With the aid of theoretical calculations, we confirmed that the peak positions are consistent with the x-ray energies from highly charged Cl ions, and the intensities reflecting deexcitation dynamics were successfully understood by taking into account the interaction between the muon and bound electrons.

physics.atom-ph

Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires

Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.

cond-mat.mes-hall