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M. S. Park

Publications and source records attributed to M. S. Park.

7 recordsLinked to original sources

Spontaneous and mass-conserved formation of continuous Si frameworks

Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods to form the structures have long relied on selective etching of silicon, which still stands as the most controllable and reliable methods to highlight essence of the applications. Here, we demonstrate an unprecedented approach to form silicon framework, which is spontaneously formed with atomistic arrangement of silicon without gravimetric loss via single electrochemical (de)alloying with lithium. Carefully controlling bare crystallinity of Si and composite/electrode designs, we reveal that the key prerequisite to forming the structure lies in using unique dealloying dynamics of crystalline-amorphous phase transformations at room temperature. Using the feature, we clearly highlight that commercially available nano-structured silicon particles can abruptly yet uniformly transform into continuous sub-2 nm spherical silicon frameworks with size-tunable pores.

cond-mat.mtrl-sci

First-principles study of the Mn, Al and C distribution and their effect on the stacking fault energies in austenite

We present ab-initio simulation of manganese, aluminum and carbon impurities in austenite and demonstrate their inhomogeneous distribution, which involves the repulsion of interstitial carbon atoms, the formation of bonded Mn-C pairs as well as a short range Al-ordering of D03-type. The mechanisms for the formation of stacking faults in Fe-Mn-Al-C are considered, and we find that the impurities have influence on the stacking fault energies only when located within a few interatomic layers near stacking fault. As a result, the stacking fault energy does not depend on the average concentration of impurities in matrix, but is highly sensitive to the concentration of the impurities in the vicinity of stacking fault defect. We predict that manganese shows a slight tendency for segregation near SF, while carbon prefers to be located far from the stacking fault region. Both aluminum and carbon impurities linearly increase the SFE, while the formation of Mn-C pairs and short range Al-ordering restrain the SFE growth. Short range order in Fe-Al-C alloys strongly affects the energy barrier for nucleation of dislocations and may lead to softening phenomenon.

cond-mat.mtrl-sci

Nodeless superconductivity in the infinite-layer electron-doped Sr_0.9La_0.1CuO_2 cuprate superconductor

We report on measurements of the in-plane magnetic penetration depth λ_{ab} in the infinite-layer electron-doped high-temperature cuprate superconductor Sr_0.9La_0.1CuO_2 by means of muon-spin rotation. The observed temperature and magnetic field dependences of λ_{ab} are consistent with the presence of a substantial s-wave component in the superconducting order parameter in good agreement with the results of tunneling, specific heat, and small-angle neutron scattering experiments.

cond-mat.supr-con

Macroscopic evidence for quantum criticality and field-induced quantum fluctuations in cuprate superconductors

We present macroscopic experimental evidence for field-induced microscopic quantum fluctuations in different hole- and electron-type cuprate superconductors with varying doping levels and numbers of CuO$_2$ layers per unit cell. The significant suppression of the zero-temperature in-plane magnetic irreversibility field relative to the paramagnetic field in all cuprate superconductors suggests strong quantum fluctuations due to the proximity of the cuprates to quantum criticality.

cond-mat.supr-con

Muon-Spin-Rotation Measurements of the Penetration Depth in the Infinite-Layer Electron-Doped Cuprate Superconductor Sr0.9La0.1CuO2

Muon spin rotation (mSR) measurements of the in-plane penetration depth lambda_ab have been performed in the electron-doped infinite layer high-Tc superconductor (HTS) Sr0.9La0.1CuO2. Absence of the magnetic rare-earth ions in this compound allowed to measure for the first time the absolute value of lambda_ab(0) in electron-doped HTS using mSR. We found lambda_ab(0)=116(2) nm. The zero-temperature depolarization rate sigma(0)?1/lambda_ab(0)^2=4.6(1) MHz is more than four times higher than expected from the Uemura line. Therefore this electron-doped HTS does not follow the Uemura relation found for hole-doped HTS.

cond-mat.supr-con

Dimensionality of superconductivity in the infinite-layer high-temperature cuprate Sr0.9M0.1CuO2 (M = La, Gd)

The high magnetic field phase diagram of the electron-doped infinite layer high-temperature superconducting (high-T_c) compound Sr_{0.9}La_{0.1}CuO_2 was probed by means of penetration depth and magnetization measurements in pulsed fields to 60 T. An anisotropy ratio of 8 was detected for the upper critical fields with H parallel (H_{c2}^{ab}) and perpendicular (H_{c2}^c) to the CuO_2 planes, with H_{c2}^{ab} extrapolating to near the Pauli paramagnetic limit of 160 T. The longer superconducting coherence length than the lattice constant along the c-axis indicates that the orbital degrees of freedom of the pairing wavefunction are three dimensional. By contrast, low-field magnetization and specific heat measurements of Sr_{0.9}Gd_{0.1}CuO_2 indicate a coexistence of bulk s-wave superconductivity with large moment Gd paramagnetism close to the CuO_2 planes, suggesting a strong confinement of the spin degrees of freedom of the Cooper pair to the CuO_2 planes. The region between H_{c2}^{ab} and the irreversibility line in the magnetization, H_{irr}^{ab}, is anomalously large for an electron-doped high-T_c cuprate, suggesting the existence of additional quantum fluctuations perhaps due to a competing spin-density wave order.

cond-mat.supr-con

Measurement of B(D_s+ -> mu+ nu_mu)/B(D_s+ -> phi mu+ nu_mu) and Determination of the Decay Constant f_{D_s}

We have observed $23.2 \pm 6.0_{-0.9}^{+1.0}$ purely-leptonic decays of $D_s^+ -> μ^+ ν_μ$ from a sample of muonic one prong decay events detected in the emulsion target of Fermilab experiment E653. Using the $D_s^+ -> ϕμ^+ ν_μ$ yield measured previously in this experiment, we obtain $B(D_s^+ --> μ^+ ν_μ) / B(D_s^+ --> ϕμ^+ ν_μ) =0.16 \pm 0.06 \pm 0.03$. In addition, we extract the decay constant $f_{D_s}=194 \pm 35 \pm 20 \pm 14 MeV$.

hep-ex