arXiv subjects

M. Salehi

Publications and source records attributed to M. Salehi.

10 recordsLinked to original sources

arXiv2019

Gate tunable quantum Hall effects in defect-suppressed Bi2Se3 films

Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high density of interfacial defects. Here, utilizing an optimal buffer layer on a gatable substrate, we demonstrate the first electrically tunable quantum Hall effects (QHE) on TSS of Bi2Se3. On the n-side, well-defined QHE shows up, but it diminishes near the charge neutrality point (CNP) and completely disappears on the p-side. Furthermore, around the CNP the system transitions from a metallic to a highly resistive state as the magnetic field is increased, whose temperature dependence indicates presence of an insulating ground state at high magnetic fields.

cond-mat.mtrl-sci↗

arXiv2018

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2Se3 is shifted towards the Dirac point with this method. Using THz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (~ 50 meV above the Dirac point and 170 meV below the conduction band minimum) and it is stabilized in the intrinsic regime while enhancing electron mobility. This represents the first use of a charged polymer gate for modulating TI charge density. The mobility of surface state electrons is enhanced to a value as high as ~1600 cm^2/Vs at 5K.

cond-mat.mes-hall↗

arXiv2017

Measurement of the Decays $\boldsymbol{B\toη\ellν_\ell}$ and $\boldsymbol{B\toη^\prime\ellν_\ell}$ in Fully Reconstructed Events at Belle

We report branching fraction measurements of the decays $B^+\toη\ell^+ν_\ell$ and $B^+\toη^\prime\ell^+ν_\ell$ based on 711~fb$^{-1}$ of data collected near the $Υ(4S)$ resonance with the Belle experiment at the KEKB asymmetric-energy $e^+e^-$ collider. This data sample contains 772 million $B\bar B$~events. One of the two $B$~mesons is fully reconstructed in a hadronic decay mode. Among the remaining ("signal-$B$") daughters, we search for the $η$~meson in two decay channels, $η\toγγ$ and $η\toπ^+π^-π^0$, and reconstruct the $η^{\prime}$~meson in $η^\prime\toηπ^+π^-$ with subsequent decay of the $η$ into $γγ$. Combining the two $η$ modes and using an extended maximum likelihood, the $B^+\toη\ell^+ν_\ell$ branching fraction is measured to be $(4.2\pm 1.1 (\rm stat.)\pm 0.3 (\rm syst.))\times 10^{-5}$. For $B^+\toη^\prime\ell^+ν_\ell$, we observe no significant signal and set an upper limit of $0.72\times 10^{-4}$ at 90\% confidence level.

hep-ex↗

arXiv2017

Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ with high charge-carrier density

Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a finite conducting bulk, as well as additional topologically trivial surface states. To investigate these parallel conduction transport channels, we studied Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ thin films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We identify a clear Zeeman-split bulk contribution to the oscillations from a comparison between the charge-carrier densities extracted from the magnetoresistance and the oscillations. Furthermore, our analyses indicate the presence of a two-dimensional state and signatures of additional states the origin of which cannot be conclusively determined. Our findings underpin the necessity of theoretical studies on the origin of and the interplay between these parallel conduction channels for a careful analysis of the material's performance.

cond-mat.mes-hall↗

arXiv2017

Surface vibrational modes of the topological insulator Bi$_2$Se$_3$ observed by Raman spectroscopy

We present polarization resolved Raman scattering study of surface vibration modes in the topological insulator Bi$_2$Se$_3$ single crystal and thick films. Besides the four Raman active bulk phonons, we observed four additional modes with much weaker intensity and slightly lower energy than the bulk counterparts. Using symmetry analysis, we assigned these additional modes to out-of-plane surface phonons. Comparing with first principle calculations, we conclude that the appearance of these modes is due to $c$-axis lattice distortion and van der Waals gap expansion near the crystal surface. Two of the surface modes at 60 and 173 cm$^{-1}$ are associated with Raman active $A_{1g}$ bulk phonon modes, the other two at 136 and 158 cm$^{-1}$ are associated with infrared active bulk phonons with $A_{2u}$ symmetry. The latter become Raman allowed due to reduction of crystalline symmetry from $D_{3d}$ in the bulk to $C_{3v}$ on the crystal surface. In particular, the 158 cm$^{-1}$ surface phonon mode shows a Fano lineshape under resonant excitation, suggesting interference in the presence of electron-phonon coupling of the surface excitations.

cond-mat.mtrl-sci↗

arXiv2016

Quantized Faraday and Kerr rotation and axion electrodynamics of a 3D topological insulator

Topological insulators have been proposed to be best characterized as bulk magnetoelectric materials that show response functions quantized in terms of fundamental physical constants. Here we lower the chemical potential of three-dimensional (3D) Bi$_2$Se$_3$ films to $\sim$ 30 meV above the Dirac point, and probe their low-energy electrodynamic response in the presence of magnetic fields with high-precision time-domain terahertz polarimetry. For fields higher than 5 T, we observed quantized Faraday and Kerr rotations, whereas the DC transport is still semi-classical. A non-trivial Berry phase offset to these values gives evidence for axion electrodynamics and the topological magnetoelectric effect. The time structure used in these measurements allows a direct measure of the fine structure constant based on a topological invariant of a solid-state system.

cond-mat.mes-hall↗

arXiv2016

Tuning and Stabilizing Topological Insulator Bi2Se3 in the Intrinsic Regime by Charge Extraction with Organic Overlayers

In this work, we use charge extraction via organic overlayer deposition to lower the chemical potential of topological insulator Bi2Se3 thin films into the intrinsic (bulk-insulating) regime. We demonstrate the tuning and stabilization of intrinsic topological insulators at high mobility with low-cost organic films. With the protection of the organic charge extraction layers tetrafluorotetracyanoquinodimethane(F4TCNQ) or tris(acetylacetonato)cobalt(III) (Co(acac)3), the sample is stable in the atmosphere with chemical potential ~135 meV above the Dirac point (85 meV below the conduction band minimum, well within the topological insulator regime) after four months, which is an extraordinary level of environmental stability. The Co complex represents the first use of an organometallic for modulating TI charge density. The mobility of surface state electrons is enhanced as high as ~2000 cm2/Vs. Even at room temperature, a true topologically insulating state is realized and stabilized for months' exposure to the atmosphere.

cond-mat.mes-hall↗

arXiv2015

Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$

Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained from efforts to electrically probe spin-momentum locking in the topological insulator Bi$_2$Se$_3$ using ferromagnetic contacts. Upon inverting the magnetization of the ferromagnetic contacts, we find a reversal of the measured voltage. Extensive analysis of the bias and temperature dependence of this voltage was done, considering the orientation of the magnetization relative to the current. Our findings indicate that the measured voltage can arise due to fringe-field-induced Hall voltages, different from current-induced spin polarization of the surface state charge carriers, as reported recently. Understanding the nontrivial origin of the measured voltage is important for realizing spintronic devices with topological insulators.

cond-mat.mes-hall↗

arXiv2014

Quantum transport through 3D Dirac materials

Bismuth and its alloys provide a paradigm to realize three dimensional materials whose low-energy effective theory is given by Dirac equation in 3+1 dimensions. We study the quantum transport properties of three dimensional Dirac materials within the framework of Landauer-Büttiker formalism. Charge carriers in normal metal satisfying the Schrödinger equation, can be split into four-component with appropriate matching conditions at the boundary with the three dimensional Dirac material (3DDM). We calculate the conductance and the Fano factor of an interface separating 3DDM from a normal metal, as well as the conductance through a slab of 3DDM. Under certain circumstances the 3DDM appears transparent to electrons hitting the 3DDM. We find that electrons hitting the metal-3DDM interface from metallic side can enter 3DDM in a reversed spin state as soon as their angle of incidence deviates from the the direction perpendicular to interface. However the presence of a second interface completely cancels this effect.

cond-mat.mes-hall↗

arXiv2002

Interleaver Design for Turbo Codes

The performance of a Turbo code with short block length depends critically on the interleaver design. There are two major criteria in the design of an interleaver: the distance spectrum of the code and the correlation between the information input data and the soft output of each decoder corresponding to its parity bits. This paper describes a new interleaver design for Turbo codes with short block length based on these two criteria. A deterministic interleaver suitable for Turbo codes is also described. Simulation results compare the new interleaver design to different existing interleavers.

math.CO↗